• Title/Summary/Keyword: 반응 메카니즘

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Short Reaction Mechanism for Premixed CH4-Air Flames at High Pressure (고압에서 예혼합 CH4-Air 화염의 축소 반응 메카니즘)

  • Lee, Su-Gak;Lee, Ki-Yong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.6
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    • pp.647-653
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    • 2012
  • A short reaction mechanism for premixed $CH_4$-air flames at high pressure was developed using a reduction method based on the combined application of the simulation error minimization connectivity method and the iterative species-removal sensitivity method. It consisted of 43 species and 554 elementary reactions under the condition that it produces less than 5% of the maximum error. The flame structures obtained using a detailed reaction mechanism and the short reaction mechanism were compared for $CH_4$-air flames with various initial temperatures and equivalence ratios at high pressure, and the results were in good agreement. Therefore, the short reaction mechanism developed could reproduce the flame speeds, temperatures, and concentrations of major and minor species at high pressure.

Photochemical Reaction Simulation of Toluene/NOx Mixture Using the Morpho Model (Morpho를 이용한 톨루엔/NOx 광화학 반응 실험결과의 해석)

  • 이영미;이승복;배귀남;문길주
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 2003.11a
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    • pp.455-456
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    • 2003
  • 광화학 스모그 현상을 재현하기 위한 메카니즘은 약 20,000개의 반응식과 수천개의 종이 포함되어야 하므로 자세한 반응 메카니즘을 포함하는 데는 한계가 있다(Dodge, 2000). 최근에 morphecule이라 부르는 대리종(surrogates)을 사용하는 방법(morphecule approach)이 개발되었다. 이 메카니즘은 반응 속도, 생성율, 생성물의 형태를 포함하여 lumped surrogates와 관련된 인자들이 모사하는 전체 시간 중 각 t시간 동안 일정하고 그 시간이후에는 인자들이 변화한다고 가정한다. 또한 특성이 비슷한 유기 화합물의 다양한 그룹을 표현할 때 morphecule이라 부르는 특정 화학종들을 사용한다. (중략)

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Reaction Mechanism and Support Effect for the Gas-Phase Oxidation of o-Xylene (자일렌의 기상 산화반응에서의 반응 메카니즘과 담체영향)

  • Lee, Gun-Dae;Lee, Ho-In
    • Applied Chemistry for Engineering
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    • v.2 no.2
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    • pp.155-164
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    • 1991
  • The reaction mechanism and the effects of the oxidation state of vanadium oxide and of support on catalytic activity for the oxidation of o-xylene were investigated. The oxidation of o-xylene simultaneously proceeded through the consecutive and parallel mechanisms. The high valence of vanadium favored selective oxidation to phthalic anhydride, while the low valence caused complete oxidation of phthalic anhydride to CO and $CO_2$. Crystalline $V_2O_5$ showed better selectivity for partial oxidation rather than amorphous one.

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Deposition Mechanism of Tungsten thin Film in LPCVD System (저압 화학 기상 증착에서의 텅스텐 박막 증착 메카니즘)

  • 김성훈;송세안
    • Journal of the Korean Vacuum Society
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    • v.2 no.3
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    • pp.360-367
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    • 1993
  • 텅스텐 박막 증착의 메카니즘을 밝히기 위하여 먼저 SiH4와 WF6의 열분해 반응에 관한 열역학적 결과들과 표면 촉매 반응에 대한 이론적인 결과들을 고찰하였다. 실험적으론 저압 화학기상 증착법을 이용하여 WF6를 SiH4로 환원시켜 텅스텐 박막을 Si(100) 기판위에 증착하였으며 증착반응 중의 기판 표면의 변화를 in-situ로 측정하였다. 증착 메카니즘을 밝히기 위하여 반응기체를 WF6, SiH4, WF6+SiH4, WF6$\longrightarrow$SiH4$\longrightarrow$WF6+SiH4로 달리하여 반응시켰으며 그 때의 박막 특성과 표면 및 단면 형상을 측정하였다. 이론적인 고찰과 실험적인 결과들로부터 텅스텐 박막은 먼저 Si 기판에 의한 WF6의 환원반응으로 인한 증착과 이어서 SiH4에 의한 WF6의 환원으로 증착됨을 밝혔다.

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Kinetics and Mechanism for Redox Reaction of cis-$[Co(en)_2(N_3)_2]^+$ with Fe(II) in Acidic Solution (산 촉매하에서 cis-$[Co(en)_2(N_3)_2]^+$ 와 Fe(II) 와의 산화-환원반응에 대한 반응속도와 메카니즘)

  • Byung-Kak Park;Kwang-Jin Kim;Joo-Sang Lim
    • Journal of the Korean Chemical Society
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    • v.33 no.3
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    • pp.309-314
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    • 1989
  • A kinetic study was carried out for the redox reaction of cis-$[Co(en)_2(N_3)_2]^+$ with Fe(II) in acidic solution by spectrophotometric methods. This redox reaction system have been found to show a third order for overall reaction as the respective first order with respect to reactant cis-$[Co(en)_2(N_3)_2]^+$, Fe(II), and $H^+$ catalyst. The activation parameters, ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$, were obtained as 14.2Kcal/mol and -16.7 e.u., respectively. On the basis of the kinetic data, we suggest that the redox reaction system proceeds via inner sphere mechanism. The rate equation derived from the proposed mechanism is in agreement with the observed rate equation.

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Pressure Effects on the Aquation of $cis-[Co(en)(NH_3)_2Cl_2]Cl$ in Acetone-Water Mixtures (아세톤-물 혼합용매에서 $cis-[Co(en)(NH_3)_2Cl_2]Cl$의 수화반응에 미치는 압력의 영향)

  • Jong-Jae Chung;Byung-Hwan Lee
    • Journal of the Korean Chemical Society
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    • v.29 no.5
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    • pp.472-477
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    • 1985
  • The rates for the aquation of $cis-[Co(en)(NH_3)_2Cl_2]Cl in acetone-water mixtures have been measured at various pressures and temperatures by the electric conductivity method. The rate constant measured at 25$^{\circ}$C in pure water solvent is 3.47 ${\times}10^{-4}$/sec. Rate constants are increased with increasing temperature, and decreased with increasing pressure and mole fraction of acetone. Activation volumes and other activation parameters are calculated from these rate constants. The activation volumes are all positive and lie in the limited range +2.82~+$8.2cm^3$/mole. The rate constants in aqueous acetone solution are analyzed with the solvent compositions. Plots of log $k_{obs}$ vs. Grunwald-Winstein Y values show that log $k_{obs}$ varies linearly and the gradients are about 0.25. The applications of a free energy cycle relating the process initial state ${\to}$ transition state in water to that in acetone-water mixture show that the changes in solvation of the transition state have a dominant effect on the rate. From these results the aquation of this complex would be discussed in terms of dissociative mechanism ($I_d$).

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Atomic Layer Deposition of TaC gate electrode with TBTDET

  • Jo, Gi-Hui;Lee, Si-U
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.22.1-22.1
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    • 2009
  • 차세대 CMOS 공정에서 유전상수가 높은 게이트 절연막과 함께 게이트 전극이 관심을 끌고 있다. 게이트 전극은 전도도가 높아야 하고 p-MOS, n-MOS에 맞는 일함수를 가져야 하며 열적 특성이 안정해야 한다. 탄탈룸 계열 탄화물이나 질화물은 게이트 전극으로 관심을 끌고 있는 물질이며 이를 원자층 화학증착법으로 박막화 하는 공정이 관심을 끌고 있다. 원자층 화학공정에서는 전구체의 역할이 중요하며 이의 기상반응 메카니즘, 표면 반응 메카니즘을 제대로 이해해야 한다. 본 연구에서는 TBTDET (tert-butylimido tris-diethylamido tantalum) 전구체의 반응 메커니즘을 FTIR(Fourier Transform Infrared)을 이용해 진단하였다. 또한 수소, 암모니아, 메탄을 이용한 열화학 원자층 증착, 플라즈마 원자층 증착 공정을 수행하여 박막을 얻고 이들의 특성을 평가하였다. 각 공정에 따라 반응 메커니즘이 달라지고 박막의 조성이 달라지며 또한 박막의 물성도 달라진다. 특히 박막에 형성되는 TaC, TaN, Ta3N5, Ta2O5 (증착 후 산소의 유입에 의해 형성됨) 등의 조성이 공정에 따라 달라지며 박막의 물성도 달라진다. 반응메카니즘의 연구를 통해 각 공정에서 어떠한 조성의 박막이 얻어지는 지를 규명하였고 박막의 밀도에 따라 산소유입량이 어떻게 달라지는 지를 규명하였다.

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DGEBA-MDA-SN-Hydroxyl Group System and Composites -Cure Kinetics and Mechanism in DGEBA/MDA/SN/HQ System- (DGEBA-MDA-SN-Hydroxyl계 복합재료의 제조 -DGEBA-MDA-SN-HQ계의 경화반응 속도론 및 메카니즘-)

  • Shim, Mi-Ja;Kim, Sang-Wook
    • Applied Chemistry for Engineering
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    • v.5 no.3
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    • pp.517-523
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    • 1994
  • The effects of cure kinetics and mechanism of DGEBA(diglycidyl ether of bisphenol A)/MDA(4,4'-methylene dianiline) with SN(succinonitrile) and HQ(hydroquinone) as an additive and accelerator were investigated. Cure kinetics was evaluated by Kissinger equation and fractional-life method through DSC analysis. The activation energy has hydroxyl group as an accelerator, the activation energy and the starting cure-temperature were lower than those of DGEBA/MDA/SN system. Cure mechanism of those systems was investigated through FT-IR according to the various SN contents. The ratio was SN : HQ = 4 : 1. It has been known that the cure reactions of an epoxy-diamine system are composed of primary amine-epoxy reaction, secondary amino-epoxy reaction and epoxy-hydroxyl group reaction. But in DGEBA/MDA/SN system, primary amino-CN group reaction and CN group-hydroxyl group reaction were added to the above mentioned reactions. These reactions attributed to the long main chain and the low crossliking density. And in DGEBA/MDA/SN/HQ system, hydroxyl group of HQ formed a transition state with epoxide group and amime group and also opened the ring of the epoxide group rapidly, then amino-epoxy reaction took place easily.

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Nucleophilic Displacement at Sulfur Center (XI). Reaction of Naphthalenesulfonyl Chlorides with Anilines (황의 친핵성 치환반응 (제11보). 염화나프탈렌술포닐과 아닐린과의 반응)

  • Lee Ik Chon;Uhm Tae Seop;Lee Euk Suk
    • Journal of the Korean Chemical Society
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    • v.22 no.5
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    • pp.281-288
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    • 1978
  • Pseudo-first order rate constants $k_{obs}$ were determined for the reactions of naphthalenesulfonyl chlorides (1-NSC and 2-NSC) and anilines. The second order rate constant $k_2$ and third order catalytic $k_3$ were then determined from $k_{obs}$. For 1-NSC peri-hydrogen effect was observed. The large Brønsted ${\beta}$ and large negative slopes ${\rho}$ for the Hammett plots were obtained. These results with the unsually low values of activation parameters were consistent with the $S_AN$-elimination mechanism, but these can be equally well interpreted with the associative $S_N2$mechanism.

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