• Journal of the Semiconductor & Display Technology
• /
• v.2 no.4
• /
• pp.23-26
• /
• 2003

The general users find difficulties in using ellipsometers. Thus, the object of this study is to construct an ellipsometer with simple operation principle. We developed an ellipsometer which does not require alignment and calibration before measuring sample. A basis structure model after rotating a compensator spectroscopic ellipsometry, the fixed incidence angle at $70^{\circ}$. This ellipsometer does not demand calibration, because the plane of incidence is not changed due to the novel sample holder structure. The results for various standard samples were compared with those from conventional RCSE to test the performance of this instrument. Also repeated measurements were performed to test the precision of the calibration coefficient in a plane of incidence fixed.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.1
• /
• pp.15-19
• /
• 2003

Spin etcher can process frontside and backside on the wafer, which is used for etching, stripping, cleaning and wafer reclamation. A new generation of spin etchers has been designed to meet 300mm wafer processing. The larger header and higher spin speed make vibration problem a severe problem in developing equipments. This study shows schematic process of solving practical vibration problems, where it is required to analyze the principal ca uses of vibration problem and find out the method of vibration reduction in spin etcher. The vibration under normal operation is measured in time domain and is analyzed in frequency domain. And modal parameters are obtained through modal test. Using the modal parameters from experiments, the model of finite element method is formulated. From diagnosis using many measurements and analyses, it can be shown that main cause of vibration is unbalance of head.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.4
• /
• pp.23-28
• /
• 2008

A high speed automated pitch variation unit (HAPU) related to semiconductor category sorting movement of the test handler system was developed. In the design process, 'DMADOV' step of 6-Sigma method has been applied. The design result for the desirable pitch variation was a 3:1 reduction rack-pinion and a linkage which are operated by servomotors. The realization and reliability of the mechanism was obtained at the design stage by FEM analysis, and by robust design using Taguchi orthogonal array against weight and deformation. Finally, the validity of the high speed variation mechanism was confirmed via inspection using a high speed camera while performing pitch variation.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.4
• /
• pp.73-78
• /
• 2016

Contact pressure distribution between PVA brush and semiconductor wafer was measured by developing a test setup which could simulates the post CMP cleaning process. The test set-up used thin film type pressure sensor which could measure the pressure distribution of contact area with the resolution of $15.5ea/cm^2$. As the experimental results, it was verified that there had been severe contact pressure non-uniformity along the axis of the brush and between the adjacent projections on the brush's surface. These results should be considered when developing post CMP cleaning stage or designing the PVA brush.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2002.11a
• /
• pp.130-136
• /
• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.721-726
• /
• 2005

In this study, researchers classifying the artificial flaws in semiconductor. packages are performed by pattern recognition technology. For this purposes, image pattern recognition package including the user made software was developed and total procedure including ultrasonic image acquisition, equalization filtration, binary process, edge detection and classifier design is treated by Backpropagation Neural Network. Specially, it is compared with various weights of Backpropagation Neural Network and it is compared with threshold level of edge detection in preprocessing method for entrance into Multi-Layer Perceptron(Backpropagation Neural network). Also, the pattern recognition techniques is applied to the classification problem of defects in semiconductor packages as normal, crack, delamination. According to this results, it is possible to acquire the recognition rate of 100% for Backpropagation Neural Network.

• Journal of the Semiconductor & Display Technology
• /
• v.8 no.3
• /
• pp.25-30
• /
• 2009

In this study, we synthesized novel UV-curable binders and applied for negative photoresist of display device. First, we synthesized UV-curable binders by radical polymerization with a mixture of Styrene/Methyl methacrylate/Methacrylic acid/Glycidyl methacrylate/N-Cyclohexylmaleimide at a fixed composition. Following the first step, we prepared a negative photoresist mixture optimized with photo sensitive initiator and others for the litho test. And then, we studied resolution and film retention with molecular weight of each binders and numerical value of Alkaline Desolution Rate(ADR). As a result of the litho test, we found that if the novel polymers have same numerical value of ADR, the resolution decreased and the film retention increased with the increasing of molecular weight of photoresist binder.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.18-24
• /
• 2019

In this paper, expandable bobbin type multiple integrated coupled-inductor applied 4-paralled switching rectifier was proposed. To design the proposed inductor easily, inductance designing formula was derived through magnetic circuit analysis of the 4-paralleled integrated coupled-inductor. Furthermore, to verify practicality of the proposed inductor, it was applied in 600W class 4-paralleled interleaved switching rectifier, and the steady-state characteristics of the proposed inductor and discrete inductors were compared. Consequently, it was showed that the proposed inductor can replace the conventional discrete inductors with alternative electrical characteristic standard, hence miniaturization of the SMPS can be achieved. From the test result, test circuit with the proposed inductor showed maximum 97.1% of power conversion efficiency and under 18W of power loss where the circuit with discrete inductors showed 96.7% and 20W respectively.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.14-18
• /
• 2021

Electric Vehicle industry requires high technologies to stabilize apparatuses for the Coolant heater manufacturing. Vibrations of Leak Machine are one of the most critical factors for causing delivered of the defective product or poor inspection, which are the main reasons of the defects. In this study, the structure of the Leak Machine was analyzed through the experiment and the computer simulation to investigate the main reasons of the vibrations, and further to alter the design for the improved stability. And that design alterations were applied to the machine to identify the effects of those alterations. The result of the study shows that design alterations of the Leak Machine can effectively suppress about 97.8% of the vibrations, and further can improving the Inspection precision of the Coolant heater.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.1
• /
• pp.97-103
• /
• 2024

In this paper, the difference between the S-parameter and the characteristic impedance according to the structural change of the fine pitch coaxial socket was analyzed. A pitch of the probe pin was applied to 0.20mm, and ground pins of different conditions were placed on each of the five signal pins. Insertion loss and reflection loss were analyzed for the coaxial socket of normal structure and the two sockets of the proposed structure. In addition, the difference in characteristic impedance was analyzed using time domain reflectometry. Through the analysis, it was confirmed that the characteristic impedance was improved applying the new structures of the socket at the same pitch