• Title/Summary/Keyword: 반도체 칩

Search Result 325, Processing Time 0.026 seconds

Portfolio-얼랑시스템(주) 박원구대표

  • Korea Venture Business Association
    • Venture DIGEST
    • /
    • s.115
    • /
    • pp.8-10
    • /
    • 2008
  • 얼랑시스템(대표 박원구,www.erlang.co.kr)은 초고속 통신용 비메모리 반도체칩(ASIC) 설계업체로서 교환기, 네트워크 보안장비의 핵심 칩과 보드를 설계.제조한다. 여기서 개발한 교환기용 칩과 보드는 LG전자에 납품되어 최종 교환기로 완성된 후 KT, 데이콤, SK텔레콤, KTF등에 판매된다. 모범적인 상생경영을 통해 LG전자에 장영실상을 안겨준 장비인 MSR40의 핵심 비메모리칩을 개발한 얼랑시스템. 수요자 맞춤 설계로 시장의 어려움을 타개하고 세계 1위를 향해 발전하는 얼랑시스템의 박원구 대표를 만나본다.

  • PDF

Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.18 no.6
    • /
    • pp.37-43
    • /
    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

A Study on the High Viscosity Photosensitive Polyimide Degassing and Pumping System (반도체 생산공정을 위한 고점도 감광성 폴리이미드 탈포 및 공급시스템에 관한 연구)

  • Park, Hyoung-Keun
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.16 no.2
    • /
    • pp.1364-1369
    • /
    • 2015
  • As the wire bonding process has been converted into BUMP process due to the high density integration of semiconductor chip, the telecommunication line connecting to semiconductor chip and external devices have become finer. As a result, a more precise work is necessary. However, it is difficult to control quantity given the nature of high viscosity of PSPI and the yield rate continues to decline due to the inflow of bubble. Therefore, this paper developed the D&P(degassing and pumping) system to remove and supply gas that is generated from coating the high viscosity photosensitive polyimide(PSPI) in the semiconductor BUMP process.

외신

  • (사)한국여성발명협회
    • The Inventors News
    • /
    • no.23
    • /
    • pp.13-13
    • /
    • 2004
  • EU 상표$\cdot$디자인 25개국 보호시대 개막! - 중국의 `위조 반도체 칩` 방지 위해 국가적 대응 필요

  • PDF