• Title/Summary/Keyword: 반도체 제조공정

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Explosion Likelihood Investigation of Facility Using CVD Equipment Using SEMI S6 (SEMI S6를 적용한 CVD 설비의 폭발분위기 조성 가능성 분석)

  • Mi Jeong Lee;Dae Won Seo;Seong Hee Lee;Dong Geon Lee;Se Jong Bae;Jong-Bae Baek
    • Korean Chemical Engineering Research
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    • v.61 no.1
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    • pp.62-67
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    • 2023
  • Due to the prolonged impact of COVID-19, the demand for Information Technology (IT) products is increasing, and their production facilities are expanded. Consequently, the use of harmful and dangerous chemicals are increased, the risk of fire(s) and explosion(s) is also elevated. In order to mitigate these risks, the government sets standards, such as KS C IEC 60079-10-1, and manages explosion-prone hazardous facilities where flammable substances are manufactured, used, and handled. However, using the standards of KS, it is difficult to predict the actual possibility of an explosion in a facility, because ventilation (an important factor) is not considered when setting up a hazardous work environment. In this study, the SEMI S6, Tracer Gas Test was applied to the chemical vapor deposition (CVD) facility, a major part of the display industry, to evaluate ventilation performance and to confirm the possibility of creating a less explosive environment. Based on the results, it was confirmed that the ventilation performance in the assumed scenarios met the standards stipulated in SEMI S6, along with supporting the possibility of creating a less explosive working condition. Therefore, it is recommended to use the prediction tool using engineering techniques, as well as KS standards, in such hazardous environments to prevent accidents and/or reduce economic burden following accidents.

Growth of ring-shaped SiC single crystal via physical vapor transport method (PVT 방법에 의한 링 모양의 SiC 단결정 성장)

  • Kim, Woo-Yeon;Je, Tae-Wan;Na, Jun-Hyuck;Choi, Su-Min;Lee, Ha-Lin;Jang, Hui-Yeon;Park, Mi-Seon;Jang, Yeon-Suk;Jung, Eun-Jin;Kang, Jin-Ki;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.1
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    • pp.1-6
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    • 2022
  • In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

New Yellow Aromatic Imine Derivatives Based on Organic Semiconductor Compounds for Image Sensor Color Filters (이미지 센서 컬러 필터용 유기반도체 화합물 기반의 신규 황색 아로마틱 이민 유도체)

  • Sunwoo Park;Joo Hwan Kim;Sangwook Park;Godi Mahendra;Jaehyun Lee;Jongwook Park
    • Applied Chemistry for Engineering
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    • v.34 no.6
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    • pp.590-595
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    • 2023
  • Novel aromatic imine derivatives with yellow were designed and synthesized for their potential application in color filters for image sensors. The synthesized compounds possessed chemical structures using aromatic imine groups. This innovative material was evaluated thoroughly, considering its optical and thermal properties under conditions similar to commercial device manufacturing processes. Following a rigorous performance evaluation, it was found that (E)-3-methyl-4-((3-methyl-5-oxo-1-phenyl-1H-pyrazol-4(5H)-ylidene)methyl)-1-phenyl-1H-pyrazol-5(4H)-one, abbreviated as MOPMPO, exhibited an impressive solubility of 0.5 wt% in propylene glycol monomethyl ether acetate, predominantly utilized as the solvent in the industry. Furthermore, MOPMPO showed exceptional performance as a color filter material for image sensors, having a high decomposition temperature of 290 ℃. These data unequivocally establish MOPMPO as a viable yellow dye additive for coloring materials in image sensor applications.

A study on γ-Al2O3 Catalyst for N2O Decomposition (N2O 분해를 위한 γ-Al2O3 촉매에 관한 연구)

  • Eun-Han Lee;Tae-Woo Kim;Segi Byun;Doo-Won Seo;Hyo-Jung Hwang;Jueun Baek;Eui-Soon Jeong;Hansung Kim;Shin-Kun Ryi
    • Clean Technology
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    • v.29 no.2
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    • pp.126-134
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    • 2023
  • Direct catalytic decomposition is a promising method for controlling the emission of nitrous oxide (N2O) from the semiconductor and display industries. In this study, a γ-Al2O3 catalyst was developed to reduce N2O emissions by a catalytic decomposition reaction. The γ-Al2O3 catalyst was prepared by an extrusion method using boehmite powder, and a N2O decomposition test was performed using a catalyst reactor that was approximately 25.4 mm (1 in) in diameter packed with approximately 5 mm of catalysts. The N2O decomposition tests were carried out with approximately 1% N2O at 550 to 750 ℃, an ambient pressure, and a GHSV=1800-2000 h-1. To confirm the N2O decomposition properties and the effect of O2 and steam on the N2O decomposition, nitrogen, air, and air and steam were used as atmospheric gases. The catalytic decomposition tests showed that the 1% N2O had almost completely disappeared at 700 ℃ in an N2 atmosphere. However, air and steam decreased the conversion rate drastically. The long term stability test carried out under an N2 atmosphere at 700 ℃ for 350 h showed that the N2O conversion rate remained very stable, confirming no catalytic activity changes. From the results of the N2O decomposition tests and long-term stability test, it is expected that the prepared γ-Al2O3 catalyst can be used to reduce N2O emissions from several industries including the semiconductor, display, and nitric acid manufacturing industry.