• Radiation Oncology Journal
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• v.24 no.1
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• pp.44-50
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• 2006

Puroose: This study evaluated the late rectal complications in cervix cancer patients following treatment with external beam radiotherapy (EBRT) and high dose rate intracavitary radiation (HDR ICR). The factors affecting the risk of developing late rectal complications and its incidence were analyzed and discussed. Materials and Methods: The records of 105 patients with cervix cancer who were treated with radical radiotherapy using HDR ICR between July, 1995 and December, 2001 were retrospectively reviewed. The median dose of EBRT was 50.4Gy $(41.4{\sim}56.4 Gy)$ with a daily fraction size of 1.8Gy. A total of $5{\sim}7$ (median: 6) fractions of HDR ICR were given twice weekly with a fraction size of $4{\sim}5 Gy$ (median: 4Gy) to A point using an Ir (Iridium)-192 source. The median dose of ICR was 24 Gy $(20{\sim}35 Gy)$. During HDR ICR, the rectal dose was measured in vivo by a semiconductor dosimeter. The median follow-up period was 32 months, ranging from 5 to 84 months. Results: Of the 105 patients, 12 patients (11%) developed late rectal complications: 7 patients with grade 1 or 2, 4 patients with grade 3 and 1 patient with grade 4. Rectal bleeding was the most frequent chief complaint. The complications usually began to occur $5{\sim}32$ (median: 12) months after the completion of radiotherapy. Multivariate analysis revealed that the measured cumulative rectal BED over 115 Gy3 (Deq over 69 Gy) and the depth (D) of a 5 Gy isodose volume more than 50 mm were the independent predictors for late rectal complications. Conclusion: With evaluating the cumulative rectal BED and the depth of a 5 Gy isodose volume as predictors, we can individualize treatment planning to reduce the probability of late rectal complications.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.95-101
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• 1999

When a metal oxide field effect transistor (MOSFET) is exposed to ionizing radiation, electron/hole pairs are generated in its oxide layer. The slow moving holes of them are trapped in the oxide layer of p-MOSFET and appear as extra charges that change the characteristics of the transistor. The radiation-induced charges directly impact the threshold (turn-on) voltage of the transistor. This paper describes the use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Two kinds of commercial p-type MOSFETS were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial p-MOSFETS as inexpensive radiation sensors for the first time.

• Journal of Radiation Protection and Research
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• v.23 no.1
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• pp.33-47
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• 1998

Using a combination of an X-ray generator Installed in radiation calibration laboratory of Korea Atomic Energy Research Institute (KAERI) and a series of 8 radiators and filters described in ISO-4037, monoenergetic fluorescent X-rays from 8.6 keV to 75 keV were produced. This fluorescent X-rays generated by primary X-rays from radiator were discriminated $K_{\beta}$ lines with the aid of filter material and the only $K_{\alpha}$ X-rays were analyzed with the high purity Ge detector and portable MCA. The air kerma rates were measured with the 35 co ionization chamber and compared with the calculational results, and the beam uniformity and the scattered effects of radiation fields were also measured. The beam purities were more than 90 % for the energy range of 8.6 keV to 75 keV and the air kerma rates were from 1.91 mGy/h (radiator : Au, filter : W) to 54.2 mGy (radiator : Mo, filter : Zr) at 43 cm from center of the radiator. The effective area of beam at the measurement point of air kerma rates was 12 cm ${\times}$ 12 cm and the influence of scattered radiation was less than 3 %. The fluorescent X-rays established in this study could be used for the determination of energy response of the radiation measurement devices and the personal dosemeters in low photon energy regions.