• 제목/요약/키워드: 반도지(半島池)

검색결과 167건 처리시간 0.032초

반도전 전극에 들어 있는 계면활성제가 XLPE의 전기전도 특성에 미치는 영향 (Effects of Surfactant in Semicon Electrode on Electrical Conduction of XLPE)

  • 조준상;서광석;이건주
    • 한국전기전자재료학회논문지
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    • 제13권3호
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    • pp.227-234
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    • 2000
  • Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

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MODFEET의 $AL_xGa_{1-x} As Layer$내의 특성 모델 (A Model for Characteristics in the $AL_xGa_{1-x} As Layer$ of MOSFET's)

  • 박광민;오윤경;김홍배;곽계달
    • 대한전자공학회논문지
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    • 제24권3호
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    • pp.445-452
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    • 1987
  • In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

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지게차 전도 방지를 위한 시뮬레이터 설계 (Design of Simulator for Rollover Prevention of Forklift Truck)

  • 이시형;배영철
    • 한국전자통신학회논문지
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    • 제16권3호
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    • pp.571-576
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    • 2021
  • 물류 창고 등에서 지게차 사용은 일반화되어 있으나 최근에는 지게차 전도 사고가 빈번하게 발생하고 있다. 또한 일반적으로 어떤 문제를 해결하기 위해서는 컴퓨터를 이용한 시뮬레이션이나 축소된 하드웨어로 구성한 시뮬레이터를 이용한 문제 해결을 시도하고 있다. 이에 본 논문에서는 지게차의 전도 예방을 위해 기존 지게차의 문제점을 분석하고 지게차의 전도 예방을 위한 기구 개념을 설명한다. 또한 지게차 전도 예방을 위한 시뮬레이터 시스템 구성과 설계된 시뮬레이터를 제시하고자 한다.

K-최근접 이웃 알고리즘을 적용한 펌프와 모터의 상태 진단 (Status Diagnosis of Pump and Motor Applying K-Nearest Neighbors)

  • 김남진;배영철
    • 한국전자통신학회논문지
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    • 제13권6호
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    • pp.1249-1256
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    • 2018
  • 최근 인공지능에 대한 연구가 진단과 예측 분야에서 활발하게 진행되고 있다. 본 논문에서는 산업 현장에 설치되어 있는 모터와 펌프에서 발생하는 진동, 회전 수, 전류 데이터 취득한다. 취득한 데이터로부터 k-최근접 이웃(k-nearest neighbors) 알고리즘을 적용하여 이들 데이터를 학습하고, 학습한 데이터를 이용하여 펌프와 모터의 이상상태와 건전 상태를 판단하는 상태진단법을 제안한다. 제안 결과 정상상태와 이상상태가 잘 구분됨을 확인할 수 있었다.

지진파에 의해 발생하는 ULF 전자기장 변동 (ULF electromagnetic variation associated with seismic wave)

  • 이희순;이춘기;권병두;양준모;오석훈;송윤호;이태종
    • 한국지구물리탐사학회:학술대회논문집
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    • 한국지구물리탐사학회 2005년도 공동학술대회 논문집
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    • pp.197-202
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    • 2005
  • 최근 제주도에서 실시된 자기지전류(Magnetotelluric) 탐사 자료에서 일본의 Kii 반도 남동쪽 해상에서 발생한 지진활동과 관련된 전자기 현상이 관측되었으며, 이러한 동지진 전자기장 신호의 특성과 메카니즘을 분석하였다. 전파속도, 파워 스펙트럼의 특성, 지진 기록과의 비교, MT 임피던스의 변화, 타원분극 방향 등의 분석으로부터 전자기장 변동이 지진파 전파 과정에서 측점 주변에서 유도된 전자기장으로 판단되며, 측점 주변의 지전기 및 수리지질학적 구조에 의해 전자기장 변동이 크게 좌우됨을 알 수 있다. 전기역학적 효과의 간단한 고찰을 통해 관측된 전자기장의 크기가 이론적 근사와 유사함을 알 수 있었으며 전자기장의 파워가 가속도 파워와 밀접히 관련되어있음을 알 수 있으나 측점에 따라 전자기장의 크기와 방향이 크게 차이가 나는 것은 설명하기 위해서는 전기역학적 메카니즘 이외의 효과를 고려할 필요가 있다.

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154[kV]용 반도전층 재료의 최적저항, 비열 및 열전도 측정 (Volume Resistivity, Specific Heat and Thermal Conductivity Measurement of Semiconducting Materials for 154[kV])

  • 이경용;양종석;최용성;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권11호
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    • pp.477-482
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    • 2005
  • We have investigated volume resistivity and thermal properties showed by changing the content of carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both 25$\pm$1[$^{\circ}C$] and 90$\pm$1[$^{\circ}C$]. And specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The measurement temperature ranges of specific heat using the BSC was from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity using Nano Flash Diffusivity were both 25[$^{\circ}C$] and 55[$^{\circ}C$]. Volume resistivity was high according to an increment of the content of carbon black from these experimental results. And specific heat was decreased, while thermal conductivity was increased by an increment of the content of carbon black. And both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

GaAs MESFET를 이용한 초고주파 증폭기에 관한 연구 (A Studyon Microwave Ampilifer using GaAs MESFET)

  • 박한규
    • 대한전자공학회논문지
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    • 제13권5호
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    • pp.1-8
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    • 1976
  • 게이트의 길이가 2mm인 GaAb 금속반도체전계치과트랜지스터를 HP8545 자동회로망분석기에 의하여 주파수 1∼2GHz 사이에서 산란계수를 측정하였고, 산란계수의 도움으로 완전한 등가회로를 구현하였다. 본 논문에서는 50Ω의 높은 입출력 Impedance로 정합시키기 위하여 Microstrip을 사용하여 GaAs MESFET증폭기를 개발하였으며 전력이득이 8dB, 정재파비가 1.5보다 적은 결과를 얻었다. Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

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전력케이블의 반도전 재료에서 불순물 및 물성 측정 (Measurement of Impurities and Physical Properties at Semiconductive Shield of a Power Cable)

  • 이경용;양종석;최용성;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권12호
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    • pp.601-605
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    • 2004
  • In this paper, we investigated ionic impurities and physical properties by change of carbon black content, which is asemiconductive material for underground power transmission. Specimens were made into sheet form with three existing resins and nine specimens for measurement. The ionic impurities of the specimens were measured using anICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and the density of specimens was measured by a density meter. Specific heat (Cp) was then measured using aDSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. Ionic impurities were measured to be high according to increases in the content of carbon black from this experimental result and density was also increased according to these properties. In particular, the impurity content values of A1 and A2, and existing resins, were measured at more than 4000[ppm]. Specific heat from the DSC results was lowered according to augmentation in the content of carbon black. The ionic impurities of carbon black containing Fe, Co, Mn, Al and Zn are forms of rapidly passed kinetic energy that increase the number of times breaking occurs during unit time with the near particles according to an increase in the vibration of particles by the applied heat energy.

탄소나노튜브(CNT) 함량에 따른 전력케이블용 반도전 재료(층)의 전기적/기계적 특성 연구 (Electrical and Mechanical Properties of Semiconducting Shield for Power Cable by Carbon Nanotube Content)

  • 양종석;이경용;신동훈;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권8호
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    • pp.381-386
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    • 2006
  • In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both $23{\pm}\;1\;[^{\circ}C]\;and\;90{\pm}\;1\;[^{\circ}C]$. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between $23[^{\circ}C]\;and\;90[^{\circ}C]$. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties.

플라즈마 표면처리에 따른 유기트랜지스터 특성 (Polymer thin film organic transistor characteristics with plasma treatment of interlayers)

  • 이붕주
    • 한국전자통신학회논문지
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    • 제8권6호
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    • pp.797-803
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    • 2013
  • 본 논문에서는 플라즈마 중합법에 의해 유기절연막을 제작 후 이를 이용한 유기박막트랜지스터의 특성향상을 위해 반도체박막의 표면처리를 하였다. 그 결과 반도체층의 $O_2$ 플라즈마을 활용하여 30 [sec]동안 표면처리시 박막의 표면에너지는 $38mJ/m^2$값에서 $72mJ/m^2$값으로 증가되었으며, 이에 따른 유기트랜지스터의 이동도는 평균값 기준하여 29% 증가된 $0.057cm^2V^{-1}s^{-1}$의 값으로 증가된 값을 얻을 수 있었다. 이로부터 반도체박막 표면개질에 의한 유기트랜지스터의 이동도 특성향상이 가능함을 알았다.