• The Magazine of the IEIE
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• v.12 no.1
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• pp.37-39
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• 1985

본 고에서는 1974년부터 1984년까지 10년 동안의 국내 반도체 산업의 발전을 웨이퍼 가공을 중심으로 살펴보고 앞으로 5년 동안의 발전을 예상하여 본다.

• Electrical & Electronic Materials
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• v.11 no.12
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• pp.41-47
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• 1998

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1239-1248
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• 2021

In this paper, we present FDNN algorithm to perform prediction based on academic understanding. In order to apply prediction based on academic understanding rather than data-dependent prediction to deep learning, we constructed algorithm based on mathematical and hydrology. We construct a model that predicts flow rate of a river as an input of precipitation, and measure the model's performance through K-fold cross validation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Electrical & Electronic Materials
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• v.30 no.6
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• pp.3-9
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• 2017

• 한국전자현미경학회:학술대회논문집
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• 2002.05a
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• pp.78-79
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• 2002

• Ceramist
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• v.18 no.1
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• pp.51-62
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• 2015

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.59-65
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• 2023

Edge detection in image processing and computer vision is one of the most fundamental operations. Canny edge detection algorithm has excellent performance and is currently widely used. However, it is difficult to process the algorithm in real-time because the algorithm is complex. In this study, the equations required in the algorithm were simplified to facilitate hardware implementation, and the calculation speed was increased by using a parallel structure. In particular, the size and management of local buffers were selected in consideration of parallel processing and filter size so that data could be processed without bottlenecks. It was designed in verilog and implemented in FPGA to verify operation and performance.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.