• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.383-383
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• 2014

최근 디스플레이, 태양전지 그리고 touch screen panels 등 optoelectronic 장치의 시장이 성장함에 따라 투명전극의 수요가 증가하고 있다. Indium tin oxide (ITO)의 좋은 특성 때문에 주로 투명전극에 많이 사용되고 있다. 그러나 화학적 안정성이 떨어지고, 휘어질 때 특성저하가 심하여 금속나노와이어, 탄소나노튜브, 전도성폴리머, 그리고 그래핀 등의 다른 투명전극의 연구가 활발히 진행되고 있다. 그 중에서 그래핀은 높은 전자 이동도(200000 cm2v-1s-1)와 휘어져도 전기적 크게 변하지 않는 특성 때문에 유망한 투명 전도성 전극 (Transparent Conductive Electrodes, TCEs)으로 연구되어왔다. 또한 다양한 속성 가운데, 높은 광 투과성은 그래핀의 가장 큰 장점이다 [1]. 최근, 화학 기상 증착 (Chemical Vapor Deposition, CVD) 등 다양한 제조 방법이 대량 생산을 위해 개발되었다. 그러나 이 방법은 비용이 많이 들며, 과정이 상당히 복잡하고 높은 온도 (${\sim}1000^{\circ}C$)를 필요로 한다. 따라서 용매 기반의 환원된 그래핀 산화물(Reduced Graphene Oxides, RGOs)이 최근 주목 받고 있다. 그러나 RGOs의 면저항이 높아 전극으로서 사용이 제한된다. 따라서 전기적 특성을 향상시키는 방법으로 단일 벽 탄소 나노튜브 (Single-Walled Carbon Nanotubes, SWNTs)를 혼합하거나 화학적 도핑을 통하여 면저항을 크게 향상시키는 연구가 활발히 진행되고 있다. 그러나 이런 화학적 도핑의 경우 박막이 공기 중에 직접 산소나 습기와 반응하여 전기적 특성이 저하되는 문제점을 가지고 있다 [2]. 이러한 문제를 해결하기 위해 AuCl3을 도핑한 박막에 내열성 및 내광성 등의 화학적 안정성이 뛰어난 PEDOT:PSS를 코팅하여 필름의 공기중의 노출을 막아 줌으로써 도핑의 안전성 및 전기적 특성을 최적화하였다. 본 연구에서는 간단한 dip-coating방법을 사용하여 4개의 RGO/SWNTs 박막을 흡착하였다. 다음으로 AuCl3를 도핑하여 면저항 $4.909K{\Omega}$, $4.381K{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. 그리고 필름의 도핑 안전성을 향상 시키기 위해 AuCl3를 도핑한 필름 위에 전도성 폴리머 PEDOT:PSS 코팅하여 면저항 $886.1{\Omega}$, $837.5{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. AuCl3 도핑된 필름의 경우 공기 중에 150시간 노출 시 72%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 5%의 면저항 증가가 나타나 확연한 차이를 보였다. 또한 AuCl3 도핑한 필름의 경우 $150^{\circ}C$에서 60시간동안 공기중에 노출되었을 때 525%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 58%의 면저항 증가를 나타내었다. 이것은 PEDOT:PSS가 passivation역할을 하여 필름이 공기에 노출된 부분을 막아주어 도핑된 필름의 면저항의 변화를 줄여 주었음을 알 수 있다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.2
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• pp.23-27
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• 1976

$Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• Korean Journal of Materials Research
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• v.30 no.6
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.144-148
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• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.328-333
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• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.467-467
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• 2013

유기물/무기물 나노복합체는 메모리, 트렌지스터, 발광 다이오드, 태양 전지 소자에 응용이 시도되고 있으나 유기물의 물리적인 특성 때문에 전류 전송 메커니즘 규명에는 충분한 연구가 진행되어 있지 못하다. 유기물/무기물 나노복합소재를 기반으로 차세대 광학소자나 비휘발성 메모리 소자에 대한 연구가 활발히 진행되고 있으며, 기억소자의 성능 향상을 위하여 여러 가지 유기물/무기물 나노복합소재를 사용하여 제작한 유기 쌍안정성 소자가 차세대 플렉서블 비휘발성 기억소자로 대두되고 있다. 유기 쌍안정성 소자는 비휘발성 기억 소자 중에서 구조가 간단하고 제작비용이 저렴하며 유연성을 가지기 때문에 많은 연구가 진행되고 있다. 많은 장점에도 불구하고 유기물에 관한 많은 연구가 이루어지지 않았기 때문에 소자의 동작특성, 재연성 등의 문제점이 있다. 본 연구에서는 유기 쌍 안정성 소자의 전기적 특성을 연구하기 위하여 ZnO 나노입자를 포함한 PMMA 복합층을 사용하여 소자를 제작하고 전기적 특성을 측정하였으며, 유기물/무기물 나노복합소재의 전류 전송 메커니즘을 이론적으로 규명하였다. 트랩밀도 변화가 유기 쌍안정성 소자에 미치는 영향을 연구하기 위하여 C60 층을 삽입하였고, 그 결과 C60이 삽입된 유기 쌍안정성 소자가 향상된 메모리 특성을 보였다. 소자의 제작은 Indium tin oxide가 증착된 유리 기판위에 C60 층을 스핀코팅 방법으로 적층하였다. ZnO 나노 입자와 PMMA를 혼합하여 스핀코팅 방법으로 C60층 위에 박막을 형성한 후, 전극으로 Al을 열증착으로 형성하였다. Space charge limitted current 메커니즘을 이용하여 simulation을 수행하였고 이를 current density - voltage (J-V) 특성과 비교 분석하였다. J-V 특성 결과, simulation결과, 소자의 구조를 통해 유기물/무기물 나노복합소재 기반 메모리 소자의 쓰기, 지우기 및 읽기 동작에 대한 과정을 설명하였다. 또한 C60층을 삽입한 유기물/무기물 나노복합소자를 이용하여 트랩 밀도 변화가 유기 쌍안정성 소자의 전기적 특성에 미치는 영향을 연구하였다.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.202-206
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• 2011

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1370-1372
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• 1998

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.424-424
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• 2008

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.