• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.55-55
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• 2003

Ferroelectric 물질은 고유전성, 자발분극과 전기장에 따른 유전상수의 변화 등의 특성을 가지고 있으므로 많은 연구가 진행중이다. 이러한 ferroelectric 물질의 유전 특성에 미치는 요소로는 물질의 조성비, 박막의 스트레스, 결정성 등이 있다. 특히 스트레스에 대한 연구가 활발히 진행중이다. 본 연구에서 산화물 인공격자를 이용하여 단일박막에서 얻을 수 없는 격자변형도를 얻어 격자 변형이 박막의 유전특성에 미치는 영향을 연구하였다. BaTiO$_3$ (BTO)/SrTiO$_3$ (STO) 산화물 인공격자를 Pulsed laser deposition (PLD)법으로 (La,Sr)CoO$_3$ 전극이 코팅된 MGO (100) 단결정 기판위에 증착시켰다. 적층 주기에 변화를 주어 BTO와 STO 각각 1.01~1.095와 0.925 ~ 1.003의 단일 막에서는 얻을 수 없는 격자 변형도를 얻었다. 이 실험적 데이터를 기초로 하여 density functional theory (DFT)라고 불리는 범함수밀도론를 기초한 제일원리적 계산 방법을 통하여 격자 변형된 SrTiO$_3$의 구조적, 전기적 특성을 계산하였다. SrTiO$_3$와 BaTiO$_3$ 격자의 안정성을 분석하기 위하여 Vienna Ab-intio Simulation Package (VASP) code가 사용되었다. SrTiO$_3$와 BaTiO$_3$ 산화물 격자의 안정성 분석 후, frozen-phonon 계산 방법을 사용하여 zone-centered optical phonon mode가 계산되었으며, mode effective charge는 Berry-phase polarization 으로부터 얻어졌다. SrTiO$_3$ 격자가 격자변형이 일어나지 않은 상태로부터 c/a= 0.985로 격자 변형 이 일어남에 따라 optical phonon mode는 점차 hardening되었다. BaTiO$_3$ 격자의 경우 SrTiO$_3$ 격자와는 달리 격자 변형이 1.01~1.023으로 진행됨에 따라 optical phonon mode의 증가를 가져왔으나 Born effective charge의 증가하였으며, 더 이상 격자 변형이 진행됨에 따라 optical phonon mode의 감소를 가져왔으나 Born effective charge의 증가 유전상수는 증가했다. 격자 변형이 SrTiO$_3$ 와 BaTiO$_3$ 산화물 격자의 optical phonon mode와 Born effective charge에 크게 영향을 미쳤다.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Membrane Journal
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• v.29 no.3
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• pp.130-139
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• 2019

Various two-dimensional nano materials such as graphene, zeolite, and metal-organic framework have been utilized to develop an ultra-thin high-performance membrane for water purification, gas separation, and so on. Particularly, in the case of graphene oxide, synthesis methods and thin film coating techniques have been accumulated and established since early 2000s, therefore graphene oxide has been rapidly applied to membrane field. The multi-layered graphene oxide thin film can filter molecules separately by the molecular sieving of interlayer spacing between adjacent layers, and it is also possible to separate various materials depending on the surface functional groups or the degree of interaction to intercalated materials. This review mainly focuses on the nanofiltration application of graphene oxide. The major factors affecting the separation performance of graphene oxide membrane in solvent are summarized and other technical elements required for the commercialization of graphene oxide membranes will be discussed including stability issue and fabrication method.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.435-441
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• 2008

In this paper, we investigated the electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. We spin coated TIPS pentacene by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. Fabricated OTFT with chlorobenzene shows field-effect mobility of $1.0{\times}10^{-2}cm^2/V{\cdot}s$, on/off ratio of $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $5.8{\times}10^{-7}cm^2/V{\cdot}s$, on/off ratio of $1.1{\times}10^2$ and threshold voltage of 1.7 V. Moreover we measured the grain size of each TIPS pentacene solvent by atomic force microscopy (AFM). From these results, it can be concluded that a solvent with higher boiling point results in better electrical characteristics due to large grain size and high crystallinity of TIPS pentacene layer. In this paper TIPS pentacene with chlorobenzene shows the best electrical properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.78.2-78.2
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• 2012

최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.81-90
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• 2010

We introduce a novel and versatile approach for preparing self-assembled nanoporous multilayered films with antireflective properties. Protonated polystyrene-block-poly (4-vinylpyrine) (PS-b-P4VP) and anionic polystyrene-block-poly (acrylic acid) (PS-b-PAA) block copolymer micelles (BCM) were used as building blocks for the layer-by-layer assembly of BCM multilayer films. BCM film growth is governed by electrostatic and hydrogen-bonding interactions between the oppositely BCMs. Both film porosity and film thickness are dependent upon the charge density of the micelles, with the porosity of the film controlled by the solution pH and the molecular weight (Mw) of the constituents. PS7K-b-P4VP28K/PS2K-b-PAA8K films prepared at pH 4 (for PS7K-b-P4VP28K) and pH 6 (for PS2K-b-PAA8K) are highly nanoporous and antireflective. In contrast, PS7K-b-P4VP28K/PS2K-b-PAA8K films assembled at pH 4/4 show a relatively dense surface morphology due to the decreased charge density of PS2K-b-PAA8K. Films formed from BCMs with increased PS block and decreased hydrophilic block (P4VP or PAA) size (e.g., PS36K-b-P4VP12K/PS16K-b-PAA4K at pH 4/4) were also nanoporous. Furthermore, we demonstrate that the nanostructured electrochemical sensors based on patterning methods show the electrochemical activities. Anionic poly(styrene sulfonate) (PSS) layers were selectively and uniformly deposited onto the catalase (CAT)-coated surface using the micro-contact printing method. The pH-induced charge reversal of catalase can provide the selective deposition of consecutive PE multilayers onto patterned PSS layers by causing the electrostatic repulsion between next PE layer and catalase. Based on this patterning method, the hybrid patterned multilayers composed of platinum nanoparticles (PtNP) and catalase were prepared and then their electrochemical properties were investigated from sensing $H_2O_2$ and NO gas. This study was based on the papers reported by our group. (J. Am. Chem. Soc. 128, 9935 (2006); Adv. Mater. 19, 4364 (2007); Electro. Mater. Lett. 3, 163 (2007)).

• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.254-262
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• 1998

Multilayer Langmuir-Blodgett (LB) films coated on quartz crystal microbalance (QCM) of octa-substituted metallophhtalocyanines ($MPc(OEH)_8$, M = Cu, Co, and Sn) and dihydrogen phthalocyanines ($H_2Pc(OEH)_8$) were used to quantify $NO_2$ concentrations. They were exposed to various concentrations of $NO_2$ in dry $N_2$. Among the four phthalocyanines we tested, the metal-free $H_2Pc(OEH)_8$ was observed to be most sensitive to $NO_2$. However, its LB film showed a partially irreversible behavior, that is part of the frequency change due to $NO_2$ adsorption could not be recovered even after purging with pure $N_2$ gas for an extended period. Examining the spectra of NMR and FTIR revealed fact that the irreversible portion of frequency change was due to ether groups in the linkage between side chains and the Pc unit. In order to remove the effect of such initial deactivation, on $NO_2$ quantification experiment, a freshly fabricated LB film was treated at a high concentration of $NO_2$ so that the ether sites were saturated. A pretreated LB film showed a reproducible performance for repeated uses. The $CuPc(OEH)_8$ LB film showed a satisfactory sensing performance down to as low as 4 ppm. For the $H_2Pc(OEH)_8$ LB film, the lower detection limit was found to be 35ppb of $NO_2$. In order to make the experimental condition more realistic, the carrier gas, dry nitrogen, was replaced by air. It was observed that the presence of oxygen, a weak electron acceptor, reduced the sensitivity and thus increased the sensing limit to hundreds of ppb. Results of experiments with moisture added showed that the interference of moisture was quite severe.

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.79-83
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• 1996

Microwave용 GaAs MESFET 소자에 적용가능한 Schottky 접합구조로서 Au/Nb/WNx(Si) 다층박막의 특성을 평가하였다. WNx 증착시 co-sputtering에 의하여 첨가된 실리콘은 열처리 과정 동안 GaAs/Schottky 계면으로 확산되며 이 과정은 sputtering damage의 회복이 활성화되는 $700^{\circ}C$이상에서 활발해진다. 계면으로 축적된 실리콘은 Ga와 As의 유효한 확산 경로를 차단함으로서 Ga의 확산으로 인한 GsAs 내의 carrier 농도 증가를 최소화 할 수 있어서 WNx와 같은 Schottky 접합재료의 열적 안정특성의 향상을 기대할 수 있다. Au/Nb의 층을 적층시 Nb는 탈탈륨 등의 고융점 금속과 같이 sacrificial 형태의 확산방지막으로 작용하여 열적으로 안정하며 microwave용 소자에서 요구되는 낮은 비저항치(-10-5$\Omega$-cm)를 유지할 수 있다.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.7
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• pp.601-606
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• 2016

In this paper, an energy harvester is developed that has advantages regarding piezoelectric noise minimization, mass production, and an easily available environmental energy source, electromagnetic induction, as well as low-frequency bandwidth and high amplitude. A process for fabricating a three-dimensional multilayered planar coil using micro-electro-mechanical systems (MEMS) on a flexible printed circuit board FPCB is introduced. Optimal shape and size were calculated via internal resistance and inductance, and a prototype was fabricated through the MEMS procedure while considering the possibility of mass production. Although the internal resistance matched the designed value, the electromotive force generated did not reach the intended amount. The main reason for the decrease in efficiency was the low area of coil outskirt exposed to the magnetic field while there was relative motion between the magnet and the coil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.836-839
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• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.