• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.151-151
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• 2008

바이폴러 트랜지스터(이하 BJT)의 고온 콜렉터-베이스 역전압 수명시험을 실시하였고, 수영시험 전후의 특성평가를 통해 BJT의 고장모드를 분석하였다. 시험조건은 주위온도 $150^{\circ}C$에서 콜렉터-베이스 정격 역전압의 80%를 인가한 상태에서 실시하였으며, 시료수는 57개이고 최종 목표 시험시간은 2,000시간이다. 중간측정을 통해 BJT의 특성열화를 관찰하였으며, 1,500시간 경과 후 1개 시료에서 제품규격을 벗어나는 데이터가 측정되었다. 해당 시료를 분석한 결과 콜렉터-베이스 누설전류 및 전류이득($\beta$)이 증가하였고, 저주파에서의 junction capacitance 가 정상품 대비 크게 관찰되었다. 측정결과를 통해 누설전류 증가 및 이득이 증가한 원인을 추정하였다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.