• 제목/요약/키워드: 바이패스다이오드

검색결과 17건 처리시간 0.024초

Matlab을 이용한 손상된 바이패스 다이오드가 포함된 PV 모듈의 출력 추정 (Estimation of Output Power for PV Module with Damaged Bypass Diode using MATLAB)

  • 신우균;고석환;주영철;장효식;강기환
    • 한국태양에너지학회 논문집
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    • 제36권5호
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    • pp.63-71
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    • 2016
  • Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

PV 모듈의 바이패스 다이오드 배치와 그림자 영향에 따른 I-V특성에 관한 연구 (The Analysis on I-V Characteristics of PV module depending on Bypass Diode and Sun Shading Effects)

  • 김승태;강기환;박지홍;김경수;안형근;한득영;유권종
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.222-223
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    • 2007
  • Though there are many causes for the maximum output power reduction, the short-term problem is hot-spot effect by sun shading. To prevent this, normally PV maker uses bypass diode. In here, we tried to check the how bypass diodes works by varying sun shading portion on solar. In case of absence of bypass, the sun shading effect increases the series resistance and that promotes the reduction of maximum power and degradation of PV modules. Bypass diode worked normally when 60% of solar cell was shaded and the measured maximum output power was lower than that of theoretical one. The further analysis is needed.

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태양전지 모듈의 바이패스 다이오드 동작 특성 분석 (The Analysis on Operation Characteristics of Bypass Diode in PV Module)

  • 김승태;강기환;박지홍;안형근;한득영;유권종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.25-26
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    • 2007
  • In this paper, we studied the shadow effect which is one of environmental cause for hot-spot phenomenon on PV by considering electrical effects. We fabricated PV module in case of existence and nonexistence of bypass diode. And maximum output power and thermal distribution was analyzed by shadowing solar cell by increase of 5%. From the results, the PV module's(without bypass diode) maximum output power was reduced by hot-spot gradually. But the PV module's(with bypass diode) maximum output power had no reduction by operation of bypass diode, though solar cell is shadowed more than 60%. The solar cell temperature of PV module(without bypass diode) was $10^{\circ}C$ higher compared to module's one. This is a reason for shortening of durability of PV module.

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태양전지 모듈의 바이패스 다이오드 동작 특성 분석 (Operation Characteristics of Bypass Diode for PV Module)

  • 김승태;박지홍;강기환;화이티루;안형근;유권종;한득영
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.12-17
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    • 2008
  • In this paper, an I-V characteristics of bypass diode has been studied by counting the shading effect in photovoltaic module. The shadow induces hot spot phenomenon in PV module due to the increase of resistance in the current path. Two different types of PV module with and without bypass diode were fabricated to expect maximum output power with an increasing shading rate of 5 % on the solar cell. Temperature distribution is also detected by shading the whole solar cell for the outdoor test. From the result, the bypass diode works properly over 60 % of shading per cell with constant output power. Maximum power generation in case of solar cell being totally shaded with bypass diode decreases 41.3 % compared with the one under STC(Standard Test Condition). On the other hand, the maximum output power of the module without bypass diode gradually decreases by showing hot spot phenomenon with the increase of shading ratio on the cell and finally indicates 95.5 % of power loss compared with the output under STC. Finally the module temperature measured increases around $10^{\circ}C$ higher than that under STC due to hot-spots which come from the condition without bypass diode. It has been therefore one of the main reasons for degrading the PV module and shortening the durability of the PV system.

PV 모듈 내 바이패스 다이오드 손상에 의한 열적 전기적 특성 변화 분석 (Analysis on thermal & electrical characteristics variation of PV module with damaged bypass diodes)

  • 신우균;정태희;고석환;주영철;장효식;강기환
    • 한국태양에너지학회 논문집
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    • 제35권4호
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    • pp.67-75
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    • 2015
  • PV module is conventionally connected in series with some solar cell to adjust the output of module. Some bypass diodes in module are installed to prevent module from hot spot and mismatch power loss. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we study the thermal and electrical characteristics change of module with damaged bypass diode to easily find module with damaged bypass diode in photovoltaic system consisting of many modules. Firstly, the temperature change of bypass diode is measured according to forward and reverse bias current flowing through bypass diode. The maximum surface temperature of damaged bypass diode applied reverse bias is higher than that of normal bypass diode despite flowing equal current. Also, the output change of module with and without damaged bypass diode is observed. The output of module with damaged bypass diode is proportionally reduced by the total number of connected solar cells per one bypass diode. Lastly, the distribution temperature of module with damaged bypass diode is confirmed by IR camera. Temperature of all solar cells connected with damaged bypass diode rises and even hot spot of some solar cells is observed. We confirm that damaged bypass diodes in module lead to power drop of module, temperature rise of module and temperature rise of bypass diode. Those results are used to find module with a damaged bypass diode in system.

장거리 전송 파장분할 다중방식 수동형 광가입자망을 이용한 메트로망과 가입자망 통합 방안 (Consolidation of Metro Networks and Access Networks by using Long-reach WDM-PON)

  • 이상묵;문실구;김민환;이창희
    • 대한전자공학회논문지TC
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    • 제43권5호
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    • pp.59-67
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    • 2006
  • 외부에서 주입된 비간섭성 광원 (BLS: Broadband Light Source)에 파장 잠김된 패브리 페롯 레이저 다이오드(wavelength-locked F-P LD: wavelength-locked Fabry-Perot Laser Diode)를 광원으로 사용해서 50 GHz의 채널 간격을 갖는 양방향 장거리 저송 35 채널 고밀도 파장분할 다중방식 수동형 광 가입자망 (DWDM-PON: Dense Wavelength Division Multiplexing-Passive Optical Network)을 구현한다. 장거리 전송을 위해 F-P LD의 발진 모드를 제어하여 F-P LD에 주입이 요구되는 BLS 파워를 감소시키면서 출력 파워를 높인다. 결과적으로 광 증폭기의 사용 없이 70 km 단일 모드 광섬유를 통해 가입자당 100 Mb/s 이상의 대역폭을 제공하면서 모든 상하향 70 채널에서 손실 없이 이더넷 패킷을 전송하였다. 구현된 장거리 저송 DWDM-PON은 다수의 중앙국을 바이패스(Bypass)함으로써 메트로망과 가입자망을 통합할 수 있다. 또한, 구현한 DWDM-PON은 상용의 어븀 첨가 광섬유 증폭기를 광대역 광원으로 사용하여 80 가입자를 수용할 수 있으며, 반도체 광대역 광원을 사용하면, 100 가입자 이상의 수용이 가능하다.

결정질 실리콘 및 CuInxGa(1-x)Se2 모듈의 부분음영에 따른 태양전지 특성 변화 및 바이패스 다이오드의 작동 메커니즘 분석 (Analysis of Mechanism for Photovoltaic Properties and Bypass Diode of Crystalline Silicon and CuInxGa(1-x)Se2 Module in Partial Shading Effect)

  • 이지은;배수현;오원욱;강윤묵;김동환;이해석
    • 한국재료학회지
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    • 제25권4호
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    • pp.196-201
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    • 2015
  • This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.