Journal of the Korean Solar Energy Society (한국태양에너지학회 논문집)

The Korean Solar Energy Society (한국태양에너지학회)
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Analysis on thermal & electrical characteristics variation of PV module with damaged bypass diodes

PV 모듈 내 바이패스 다이오드 손상에 의한 열적 전기적 특성 변화 분석

  • Shin, Woo-Gyun (Korea Institute of Energy Research Solar Energy Department, Graduate School of Energy Science & Technology Chungnam National University) ;
  • Jung, Tae-Hee (Korea Institute of Energy Research Solar Energy Department) ;
  • Go, Seok-Hwan (Korea Institute of Energy Research Solar Energy Department) ;
  • Ju, Young-Chul (Korea Institute of Energy Research Solar Energy Department) ;
  • Chang, Hyo-Sik (Graduate School of Energy Science & Technology Chungnam National University) ;
  • Kang, Gi-Hwan (Korea Institute of Energy Research Solar Energy Department)
  • 신우균 (한국에너지기술연구원 태양광연구실, 충남대학교 에너지과학기술대학원) ;
  • 정태희 (한국에너지기술연구원 태양광연구실) ;
  • 고석환 (한국에너지기술연구원 태양광연구실) ;
  • 주영철 (한국에너지기술연구원 태양광연구실) ;
  • 장효식 (충남대학교 에너지과학기술대학원) ;
  • 강기환 (한국에너지기술연구원 태양광연구실)
  • Received : 2015.06.04
  • Accepted : 2015.08.29
  • Published : 2015.08.30
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Abstract

PV module is conventionally connected in series with some solar cell to adjust the output of module. Some bypass diodes in module are installed to prevent module from hot spot and mismatch power loss. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we study the thermal and electrical characteristics change of module with damaged bypass diode to easily find module with damaged bypass diode in photovoltaic system consisting of many modules. Firstly, the temperature change of bypass diode is measured according to forward and reverse bias current flowing through bypass diode. The maximum surface temperature of damaged bypass diode applied reverse bias is higher than that of normal bypass diode despite flowing equal current. Also, the output change of module with and without damaged bypass diode is observed. The output of module with damaged bypass diode is proportionally reduced by the total number of connected solar cells per one bypass diode. Lastly, the distribution temperature of module with damaged bypass diode is confirmed by IR camera. Temperature of all solar cells connected with damaged bypass diode rises and even hot spot of some solar cells is observed. We confirm that damaged bypass diodes in module lead to power drop of module, temperature rise of module and temperature rise of bypass diode. Those results are used to find module with a damaged bypass diode in system.

Keywords

References

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