• 한국전자파학회논문지
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• 제21권5호
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• pp.468-474
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• 2010

본 논문에서는 K-band(18.6 GHz) 대역에서 동작하는 VCHO(Voltage Controlled Harmonic Oscillator)를 설계 및 제작하였다. 제안된 구조의 발진기는 두 개의 hair-pin 공진기들이 각각 능동소자의 입력단과 출력단에 위치한다. 또한 두 개의 공진기를 동시에 동조하는 구조를 통하여 기본 주파수 억압 특성과 2차 고조파($2f_0$)의 출력을 개선하였다. VCHO의 제작 및 측정 결과에 의하면 출력 전력은 -2.41 dBm, 기본 주파수 억압 특성은 -21.84 dBc 그리고 위상 잡음은 -101.44 dBc/Hz @ 100 kHz의 특성을 얻을 수 있었다. 또한 바렉터 다이오드의 전압 변화에 따른 주파수 동조 범위는 약 10.58 MHz를 얻었으며, 이 때 ${\pm}0.19\;dB$의 전력 평탄도를 얻을 수 있었다.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.