• Title/Summary/Keyword: 몬테-카를로 시뮬레이션

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A Monte Carlo Simulation Model Development for Electron Beam Lithography Process in the Multi-Layer Resists and Compound Semiconductor Substrates (다층 리지스트 및 화합물 반도체 기판 구조에서의 전자 빔 리소그래피 공정을 위한 몬테 카를로 시뮬레이션 모델 개발)

  • 손명식
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.182-192
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    • 2003
  • A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

Estimation of Joint Size Distribution Using a Contained Trace Length Distribution in a Cylindrical Window (원통형 조사창에서의 양끝내포선 길이분포를 이용한 절리크기분포 추정 연구)

  • Suh, Ga Hyun;Song, Jae-Joon
    • Tunnel and Underground Space
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    • v.26 no.3
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    • pp.201-211
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    • 2016
  • A method for estimating rock joint size distribution using contained traces length distribution from 3D cylindrical window survey was suggested. To reduce the numerical error, an improved technique was applied. The accuracy was verified by referring to Monte-Carlo simulation and it was found that the error can be decreased with suitable gamma values.

Computationally Efficient ion-Splitting Method for Monte Carlo ion Implantation Simulation for the Analysis of ULSI CMOS Characteristics (ULSI급 CMOS 소자 특성 분석을 위한 몬테 카를로 이온 주입 공정 시뮬레이션시의 효율적인 가상 이온 발생법)

  • Son, Myeong-Sik;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.11
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    • pp.771-780
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    • 2001
  • It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

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Application of Monte Carlo Simulation to Intercalation Electrochemistry II. Kinetic Approach to Lithium Intercalation into LiMn2O4 Electrode

  • Kim, Sung-Woo;Pyun, Su-Il
    • Journal of the Korean Electrochemical Society
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    • v.5 no.2
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    • pp.86-92
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    • 2002
  • The present article is concerned with the application of the kinetic Monte Carlo simulation to electrochemistry of lithium intercalation from the kinetic view point. Basic concepts of the kinetic Monte Carlo method and the transition state theory were first introduced, and then the simulation procedures were explained to evaluate diffusion process. Finally the kinetic Monte Carlo method based upon the transition state theory was employed under the cell-impedance-controlled constraint to analyse the current transient and the linear sweep voltammogram for the $LiMn_2O_4$ electrode, one of the intercalation compounds. From the results, it was found that the kinetic Monte Carlo method is much relevant to investigate kinetics of the lithium intercalation in the field of electrochemistry.

Segregation and Order on $Pt_{0.5} Ni_{0.5}${110} Surface ($Pt_{0.5} Ni_{0.5}${110} 표면의 편석과 질서)

  • 서지근;강석태;한원근
    • Journal of the Korean Vacuum Society
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    • v.4 no.1
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    • pp.6-11
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    • 1995
  • Pt0.5 Ni0.5{110}표면에서의 편석 역전과 조성상 질서를 표면 효과를 고려한 간단한 Ising 모형을 이용하여 연구하였다. 합금 표면의 성질을 질서 상태의 해석적 계산으로 정성적으로 이해하였으며, 몬테 카를로 시뮬레이션으로 실험 결과들과 정량적으로 비교하였다. 본 연구 결과의 일부실험에 의해 검증되기를 기다린다.

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A Study on Computing Stochastic Capacity of Energy Storage Systems using Monte Carlo Simulations (몬테 카를로 시뮬레이션 기반 변동성을 고려한 에너지 저장 시스템 용량 계산에 대한 고찰)

  • Kim, Soowhan;Ryu, Jun-Hyung
    • Korean Chemical Engineering Research
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    • v.58 no.3
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    • pp.424-429
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    • 2020
  • An Energy Storage System (ESS) is recently drawing an increasing attention as an efficient tool to cope with variation in the energy system. In order to take the best utilization of ESS, the inherent variation of energy supply and demand should be properly addressed. This paper is concerned with computing the stochastic capacity of ESS in the face of such variations by way of Monte Carlo simulation. The issue of uncertainty in energy systems will be given further focus. More works are expected to be followed to address the issues in academia and industry.

Commuting Efficiency Comparison of Metropolitan Areas in South Korea: Application of Constrained Monte-Carlo Simulation to Avoid the MAUP (우리나라 대도시권 통근 효율성 비교: MAUP 회피를 위한 Constrained Monte-Carlo Simulation의 활용)

  • Hyunseong Yun;Seung-Nam Kim
    • Land and Housing Review
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    • v.15 no.2
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    • pp.73-87
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    • 2024
  • To evaluate the efficiency of commuting patterns, various commuting indicators such as excess commute and commuting potential utilized have been developed and used. It is crucial to calculate these indicators reasonably to reveal the differences in commuting patterns among metropolitan areas and to consider these in the process of formulating commuting policies. However, commuting indicators are generally calculated at the administrative district level, and thus, they are not free from the problem of the modifiable areal unit problem (MAUP). This issue can undermine the rationality of comparing commuting efficiency between metropolitan areas, making it necessary to handle the calculation of commuting indicators carefully. Therefore, this study utilises Monte Carlo Simulation to calculate optimal, actual, and maximum commuting distances, and thereby presents the excess commute and the commuting potential utilized. To apply Monte Carlo Simulation to the context of South Korea, a constrained Monte Carlo Simulation is conducted, where residential and workplace locations used in the simulation are selected based on the actual locations of buildings. The analysis is conducted on 13 metropolitan areas with established metropolitan plans using the 2016 Household Travel Survey data. The commuting indicators calculated through the simulation showed minimal differences compared to the results obtained through conventional methods. The comparison of commuting efficiency among metropolitan areas revealed that even if the degree of spafial balance between residential and workplace locations is similar, the actual commuting patterns can differ significantly. It is suggested that further research considering characteristics such as the area of each metropolitan region will be necessary in the future.