• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.3
• /
• pp.449-455
• /
• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Korean Journal of Optics and Photonics
• /
• v.5 no.1
• /
• pp.106-112
• /
• 1994

The injection-locking of the broad-area diode laser was analysed by using the Fabry-Perot model. The far-field pattern of the output beam was able to be treated by superposing the individual beams emitted from the front facet due to the multiple reflections between the front and rear facets. and the exact near and far field patterns were obtained. The angle-steering effect according to change of the incident frequency was changed was calculated and found to be 0.022 degree/GHz with a bandwidth of 120 GHz.20 GHz.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.7 no.3
• /
• pp.579-583
• /
• 2012

We have designed the small particle detection system. The scatteing effect of light was used to detect small particle. The fabricated system consisted of laser diode, lens, pin hole, and photo detector. The aperture, lens, and photo detector were optimized to improve the performance of detection system. The fabricated detection system detected the scattered light by small particle entering into detection system and its response time was fast.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.3
• /
• pp.140-151
• /
• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

• Journal of Korean Ophthalmic Optics Society
• /
• v.4 no.2
• /
• pp.45-49
• /
• 1999

The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

• Korean Journal of Optics and Photonics
• /
• v.4 no.4
• /
• pp.420-427
• /
• 1993

Dielectric thin film mirrors are embedded in multimode and single-mode fibers by a fusion splicing technique. The fibers with $45{\circ}$ angled embedded mirrors serve as ultra-compact directional couplers with low excess optical loss of 0.2 dB for multimode and 0.5 dB for single mode at 1.3 ${\mu}m$ and excellent mechanical properties. The reflectance is wavelength dependent and strongly polarization depencient. Far-field scans of the reflected output power measured with a white-light source show a pattern which is almost circularly symmetric with aspect ratio of 1.09 at 5% of the peak power. The splitting ratio in a multimode coupler measured with a diode laser source is much less dependent on input coupling conditions than in conventional fused biconical-taper couplers, indicating that these couplers are less susceptible to modal noise occuring in optical fiber communication systems. Spectral properties of multilayer internal mirrors normal to the fiber axis have been investigated experimentally, and a matrix analysis has been used to explain the results.