• Korean Journal of Materials Research
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• v.22 no.8
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• pp.439-444
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• 2012

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Applied Chemistry for Engineering
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• v.21 no.3
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• pp.311-316
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• 2010

This study aimed to prepare antimony-doped tin oxide (ATO) dispersion with high stability. The methods to achieve this goal were sought by investigating the changes of ATO particle size, size distribution, dispersion property as wet ball milling treatment time increased. And the changes of wet ball milled ATO dispersion property were also investigated, as pH increased. The changes of ATO particle size and size distribution, according to wet ball milling treatment time were evaluated with laser diffraction particle size analyzer and scanning electron microscope (SEM). The changes of ATO dispersion property, as wet ball milling treatment time and pH increased, were evaluated with zeta potential analysis and Turbiscan. By 60 min wet ball milling treatment time, ATO particle size decreased and size distribution became narrower, as the treatment time increased. After 60 min milling, the ATO particle size decreased to less than 30% of the initial size and the size distribution was narrowed to $0.1{\sim}5{\mu}m$ from $1{\sim}35{\mu}m$. However, more than 60 min milling, ATO particles aggregated and the particle size increased. ATO dispersion stability also increased as the treatment time and pH increased because the reduced particle size increased particle surface energy and repulsion between particles and the increased pH enhanced particle surface ionization. Hence, after proper length of wet ball milling treatment, highly stable ATO dispersion can be prepared, as increasing pH of the dispersion.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.752-756
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• 2002

Green-emitting $Zn_2SiO_4:Mn$ phosphors for PDP(Plasma Display Panel) application were synthesized by colloidal seed-assisted spray pyrolysis process. The codoping with $Gd^{3+}/Li^+$, which replaces $Si^{4+}$ site in the willemite structure, was performed to improve the luminous properties of the $Zn_2SiO_4:Mn$ phosphors. The particles prepared by spray pyrolysis process using fumed silica colloidal solution had a spherical shape, small particle size, narrow size distribution, and non-aggregation characteristics. The $Gd^{3+}/Li^+$ codoping amount affected the luminous characteristics of $Zn_2SiO_4:Mn$ phosphors. The codoping with proper amounts of $Gd^{3+}/Li^+$ improved both the photoluminescence efficiency and decay time of $Zn_2SiO_4:Mn$ phosphor particles. In spray pyrolysis, the post-treatment temperature is another factor controlling the luminous performance of $Zn_2SiO_4:Mn$ phosphors. The $Zn_{1.9}SiO_4:Mn_{0.1}$ phosphor particles containing 0.1 mol% $Gd^{3+}/Li^+$ co-dopant had a 5% higher PL intensity than the commercial product and 5.7 ms decay time after post-treatment at $1,145^{\circ}C$.

• Korean Chemical Engineering Research
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• v.46 no.6
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• pp.1135-1141
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• 2008

The $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) interconnect materials for high temperature electrolysis of steam were investigated in views of sinterability and electrical conductivity. $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$ (LCC), and $La_{0.75}Sr_{0.25}CrO_3$ (LSC) powders were synthesized by coprecipitation method. Crystal structure was confirmed by X-ray diffraction (XRD). The sintering characteristics were analyzed by relative density and scanning electron microscopy. The electrical conductivity was measured by a DC four probe method. From the analyses of relative densities, it was found that the doped $LaCrO_3$ showed better sinterability than $LaCrO_3$ and the those sinterability increased with decrease of those particle sizes. The XRD results at different sintering temperatures for LCC and LSC revealed that the sinterability is closely related to the second phase transformation, that is, the second phase melting above $1,300^{\circ}C$ for LCC and $1,400^{\circ}C$ for LSC significantly promotes the sinterability. In case of electrical conductivities of LCC and LSC, which had a similar relative density, LCC showed better electrical conductivity than LSC.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.428-432
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• 1998

We fabricated 1$\times$8 array of GaAs/AlGaAs quantum well infrared photodetectors for the long wavelength infrared detection which is based on the bound-continuum intersubband transition, and characterized its electrical and optical properties. The device was grown on SI-GaAs(100) by the molecular beam epitaxy and consisted of 25 period of 40 ${\AA} $ GaAs well and 500 ${\AA} $ $Al_{0.28} Ga_{0.72}$ As barrier. To reduce the possibility of interface states only the center 20 ${\AA} $ of the well was doped with Si ($N_D=2{\times}10^{18} cm^{-3}$). We etched the sample to make square mesas of 200$\times$200 $\mu\textrm{m}^2$ and made an ohmic contact on each pixel with Au/Ge. Current-voltage characteristics and photoresponse spectrum of each detector reveal that the array was highly uniform and stable. The spectral responsivity and the detectivity $D^＊$ were measured to be 180,260 V/W and $4.9{\times}10^9cm\sqrt{Hz}/W$ respectively at the peak wavelength of $\lambda$ =7.8 $\mu\textrm{m}$ and at T=10 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.266-267
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• 2011

질화갈륨(GaN)은 높은 전자이동도 및 높은 항복전계를 가지며 낮은 온저항으로 인하여 에너지효율이 우수하기 때문에 고출력 전력소자 분야에서 많은 관심을 받고 있다. GaN을 이용한 고출력 전력소자의 경우 상용화 수준에 근접할 만한 기술적 진보가 있었으나, 페르미 레벨 고정(Fermi-level pinning) 현상, 소자의 누설전류 등 아직 해결되어야 할 문제를 갖고 있다. 본 연구에서는 실리콘 기판 위에 성장된 GaN 에피탁시를 활용한 고출력 전력소자의 누설전류를 억제시키기 위해 오믹 접합 중 Au의 상호확산을 억제하는 중간층 금속(Mo or Ni)을 변화시켰으며 오믹 열처리 온도에 따른 특성을 비교 연구하였다. $Cl_2$와 $BCl_3$를 이용하여 0.6 ${\mu}m$ 깊이의 메사 구조가 활성영역을 형성하였고, Si 도핑된 n-GaN 위에 Ti/Al/Mo/Au (20/100/25/200 nm) 와 Ti/Al/Ni/Au (20/100/25/200 nm) 오믹 접합을 각각 설계, 제작하였다. 오믹 열처리시의 GaN 표면오염을 방지하기 위해 $SiO_2$ 희생층을 증착하였다. 오믹 접합 형성을 위해 각 750$^{\circ}C$, 800$^{\circ}C$, 850$^{\circ}C$에서 30초간 열처리를 진행 하였으며, 이후 6 : 1 BOE 용액으로 $SiO_2$ 희생층을 제거하였다. 750, 800, 850$^{\circ}C$에서 Ti/Al/Mo/Au 구조의 오믹 접합 저항은 각 2.56, 2.34, 2.22 ${\Omega}$-mm 이었으며, Ti/Al/Ni/Au 구조의 오믹 접합 저항은 각 43.72, 2.64, 1.86 ${\Omega}$-mm이었다. Isolation 누설전류를 측정하기 위해서 두 개의 오믹 접합 사이에 메사 구조가 있는 테스트 구조를 제안하였다. Isolation 누설전류는 Ti/Al/Mo/Au 구조에서 두 오믹 접합 사이의 거리가 25 ${\mu}m$이고 100 V일 때 750, 800, 850 $^{\circ}C$의 열처리 온도에서 각 1.25 nA/${\mu}m$, 2.48 nA/${\mu}m$, 8.76 nA/${\mu}m$이었으며, Ti/Al/Ni/Au 구조에서는 각 1.58 nA/${\mu}m$, 2.13 nA/${\mu}m$, 96.36 nA/${\mu}m$이었다. 열처리 온도가 증가하며 오믹 접합 저항은 감소하였으나 isolation 누설전류는 증가하였다. 750$^{\circ}C$ 열처리에서 오믹 접합 저항은Ti/Al/Mo/Au 구조가 Ti/Al/Ni/Au 구조보다 약 17배 우수하였고, 850$^{\circ}C$ 고온의 열처리 경우 Ti/Al/Mo/Au 구조의 isolation 누설전류는 8.76 nA/${\mu}m$로 Ti/Al/Ni/Au의 누설전류 96.36 nA/${\mu}m$보다 약 11배 우수하였다. Ti/Al/Mo/Au가 Ti/Al/Ni/Au 보다 오믹 접합 저항과 isolation 누설전류 측면에서 전력용 GaN 소자에 적합함을 확인하였다.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.406-412
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• 2020

SrMoO₄:RE³⁺ (RE=Dy, Sm, Tb, Eu, Dy/Sm) phosphors are prepared by co-precipitation method. The effects of the type and the molar ratio of activator ions on the structural, morphological, and optical properties of the phosphor particles are investigated. X-ray diffraction data reveal that all the phosphors have a tetragonal system with a main (112) diffraction peak. The emission spectra of the SrMoO₄ phosphors doped with several activator ions indicate different multicolor emissions: strong yellow-emitting light at 573 nm for Dy³⁺, red light at 643 nm for Sm³⁺, green light at 545 nm for Tb³⁺, and reddish orange light at 614 nm for Eu³⁺ activator ions. The Dy³⁺ singly-doped SrMoO₄ phosphor shows two dominant emission peaks at 479 and 573 nm corresponding to the ⁴F_9/2→⁶H_15/2 magnetic dipole transition and ⁴F_9/2→⁶H_13/2 electric dipole transition, respectively. For Dy³⁺ and Sm³⁺ doubly-doped SrMoO₄ phosphors, two kinds of emission peaks are observed. The two emission peaks at 479 and 573 nm are attributed to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺ and two emission bands centered at 599 and 643 nm are ascribed to ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increases from 1 to 5 mol%, the intensities of the emission bands of Dy³⁺ gradually decrease; those of Sm³⁺ slowly increase and reach maxima at 5 mol% of Sm³⁺ ions, and then rapidly decrease with increasing molar ratio of Sm³⁺ ions due to the concentration quenching effect. Fluorescent security inks based on as-prepared phosphors are synthesized and designed to demonstrate an anti-counterfeiting application.