• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.21 no.2
• /
• pp.1-7
• /
• 2020

In modern society, as technology has advanced and human life area has expanded, there has been an increasing demand for high-quality voice and video communications services without restrictions on time and place. In response to this demand, satellite communications systems that provide a wide range of communications and that offer multiple access are evolving day by day. In satellite communications systems such as Digital Video Broadcasting - Return Channel Via Satellite (DVB-RCS) and Warfighter Information Network-Tactical (WIN-T), the multi-frequency time division multiple access (MF-TDMA) demand assigned multiple access (DAMA) scheme is used for efficient resource allocation. In this scheme, since the satellite terminals periodically request resources from the network controller, and the network controller dynamically allocates resources, it is necessary to arrange resource allocation information from time to time. Shortening of the alignment time is a more important factor in a satellite communications system in which a long transmission delay occurs due to long-distance transmission and reception. In this paper, we propose a sorting algorithm variable-selection scheme that shortens the sorting time by cross-selecting the sorting algorithm based on a threshold value, while setting the number of frames in the MF-TDMA DAMA satellite communications system as the threshold value.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.10 s.352
• /
• pp.90-97
• /
• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.10A
• /
• pp.965-970
• /
• 2005

In this paper, SPDT Tx/Rx MMIC switch applicable to IEEE 802.11a WLAN systems is designed and fabricated using a specific designed epitaxial layered pHEMT wafer and ETRI's $0.5{\mu}m$ pHEMT switch process. The SPDT switch exhibits a low insertion loss of 0.68dB, high isolation of 35.64dB, return loss of 13.4dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V. The comparison of the measured performances with commercial products based on the GaAs pHEMT technology for low voltage operating at ${\pm}$ 3V/0V shows that the return loss is somewhat inferior to the commercial products and insertion loss is compatible with each other however, isolation characteristics are much better than in conventional chips. Based on these performances, we can conclude that the developed SPDT switch MMIC has an enough potential for IEEE802.11a standard 5 GHz-band wireless LAN applications.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.4
• /
• pp.108-116
• /
• 2002

This paper presents the measurements and evaluation of voltage waveforms due to human electrostatic discharge(ESD). The principle of operation and design rule of a new device for measuring the ESD fast transient voltages with very fast rise time were described. Peak values and rise time of ESD voltages derived from a charged human body under a variety of experimental conditions were examined. The frequency bandwidth of the proposed voltage measuring system ranges from DC to 400[㎒]. The ESD voltage waveform is nearly equal to the ESD current waveform and the peak amplitude of ESD current waveform is roughly proportional to the ESD voltage in each experimental conditions. A rapid approach results in a discharge voltage with a faster initial rise time than for a slow approach. The voltages caused by direct finger ESDs have an initial slope with a relatively long, 10∼30[ns] rise time, but the amplitude is small. On the other hand, the voltages caused by direct hand/metal ESDs have a steep initial s1ope with 1 ∼3[ns] rise time, but an initial spike is very big. As a consequence, it was found that the ESD voltage and current waveforms strongly depend on the approach speed and material of intruder. These measurement results would be useful to design the ESD protective devices.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.9
• /
• pp.18-24
• /
• 2007

We report broadband cascode amplifiers of a single-ended and a balanced amplifier for the millimeter-wave applications. The amplifiers were fabricated using 0.1 ${\mu}m\;{\Gamma}-gate$ PHEMT technology on GaAs substrate. The single-ended cascode amplifier was designed and fabricated by using shunt peaking technology. The fabricated single-ended cascode amplifier shows 3 dB bandwidth of 37 GHz($18.5{\sim}55.5$ GHz) and the maximum $S_{21}$ gain of 9.38 dB. The balanced cascode amplifier using tandem couplers achieves 3 dB bandwidth and the maximum $S_{21}$ gain of 44.5 GHz($21{\sim}65.5$ GHz) and 10.4 dB at 60 GHz, respectively. The 3 dB bandwidth of the balanced cascode amplifier shows 20% lager than the single-ended cascode amplifier.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.107-107
• /
• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.9
• /
• pp.25-33
• /
• 2007

In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

• Journal of the Society of Cosmetic Scientists of Korea
• /
• v.42 no.2
• /
• pp.103-109
• /
• 2016

Efficacy of cosmetics has been mainly evaluated by qualitative and quantitative methods based on visual sense, tactile sense and skin structure until now. In this study, we suggested a novel evaluation method for skin status based on sound; measuring and analyzing the rubbing noise generated by applying cosmetics. First, the rubbing noise was measured at a close range by a high-sensitivity microphone in anechoic environment, and the noises were analyzed by 1/3 octave band analysis in frequency-domain. Three conditions, 1) before washing, 2) after washing and 3) after application of cosmetics, were compared. As a result, sound pressure level (SPL) of rubbing noise after washing was larger than that of before washing, and the SPL of rubbing noise after cosmetic application was the smallest. Furthermore, the energy of rubbing noise after application was higher than that of the before and after washing conditions in a low frequency band (lower than 2 kHz region). Conversely, the energy of rubbing noise after application was much lower than the others in a high-frequency band (upper than 2 kHz region). This change of energy distribution was described as a balloon-skin model. High SPL in the low frequency region after the cosmetic applications was due to the increase of "flexibility index", while SPL in the high frequency region significantly decreased because of the attenuation which is related to "softness index". Therefore, we developed two indices based on the spectrum-energy difference for evaluating skin conditions. This proposed method and indices were verified via skin flexibility and roughness measurement using cutometer and primos respectively. These results suggest that acoustic measurement of skin friction noise may be a new skin status evaluation method.