• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.117-124
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• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.180-183
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• 2001

$YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.39-50
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• 1991

Single crystals of yttrium iron garnet $(YIG:Y_3Fe_5O_{12})$have been grown by a modified floating zone crystal growth technique(Traveling Solvent Floating Zone, TSFZ method) using an infrared radiation convergence type heater. A series of evaluations for the resulting YIG single crystals were carried out. The grown crystals are 5~6mm in diameter and 15~35mm in length. The conditions of single crystal growth were as follows; growth rate 1mm/h, rotation rate 30rpm, gas flow rate 0.2 1/min., zone aspect ratio 1, convexity of interface 0.29, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.65-69
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• 2017

AlN single crystal was thermally treated at 1600, 1700 and $1800^{\circ}C$ in the ambient pressure of under 100 torr. AlN single crystal was obtained by PVT (Physial Vapor Transport) method using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. The single crystal specimens surface was evaluated by optical microscope and it was recognized that their morphology was varied with the heat treatment temperature and a set ambient pressure. In this report, the optical microscopic results were reported. According to the increase of temperature the crystal surface was etched thermally. It was evaluated by appearance of small pits on the crystal surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.156-156
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• 2003

수평 전기로에서 ZnIn$_2$S$_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 2nIn2S4단결정 박막을 반절연성 GaAs(100)기판 위에 성장시켰다. ZnIn2S4 단결정 박막은 증발원의 온도를 610 $^{\circ}C$, 기판의 온도를 450 $^{\circ}C$로 성장시켰고 성장 속도는 0.5 $\mu\textrm{m}$/hr로 확인되었다. ZrIn2S4 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence) 스펙트럼이 433 nm (2.8633eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 133 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.51$\times$$10^{17}$ electron/$cm^{-3}$ 291 $\textrm{cm}^2$/v-s였다. ZnIn2S4 단결정 박막의 광전류 단파장대 봉우리들로부터 10 K에서 측정된 $\Delta$Cr(crystal field splitting)은 0.1678 eV, $\Delta$So(spin orbit coupling)는 0.0148 eV였다. 10 K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 주개 bound exciton등의 피크가 관찰되었다. 이때 중성 주개 bound exciton의 반치폭과 결합 에너지는 각각 9 meV와 26 meV 였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 130 meV 였다.다.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.2
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• pp.167-171
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• 2014

Using chemical vapor deposition(CVD), the synthesis of graphene was performed on poly and single crystalline Cu substrates. The growth behavior of graphene and its characterization were shown utilizing the optical microscopic image and its image analysis. As a result in the analysis of graphene growth, it was found out the graphene is growing always in particular direction in relation to the crystalline direction of a single grain in polycrystalline Cu substrate. With the image analysis it was possible to show the characterization of graphene, such as the growth direction and the number of layers showing single, double and triple layers, within the neighboring single grains in polycrystalline Cu. In addition, the relatively large area of graphene with about $3mm^2$ on Cu(111) having high quality, single layer, and single crystalline was shown along with its characterization.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.139-142
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• 2024

Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.677-683
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• 2004

Nd:LLM (Nd:LiLa(MoO$_4$)$_2$) single crystals for the laser host material were grown by the Czochralski method. The Nd:LLM grown single crystals cracked easily, and the reasons of cracks are generally related with phase transition, incongruent melting, chemical heterogeneity of composition, geometric thermal structures of imbalance and growth direction. We confirmed that phase transition is not observed by TG-DTA thermal analysis, and the XRD analysis revealed congruent melting in our products. It was confirmed that the volatilization of Li$_2$O composition is the important reason of chemical heterogeneity. The geometric thermal profile of the resistance furnace of our own design was controlled with a crucible height. Also, Nd:LLM crystal affected growth direction, and was the best quality in case of (101) growth direction. The distribution and effective distribution coefficient of Nd$^{3+}$ ion were accomplished by PIXE analysis.s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.272-276
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• 2007

The various colored cubic zirconia single crystals for jewelry were grown by skull melting method of excellent productivity. The cubic zirconia is similar to the character of diamond, which has high refractive index, large dispersion and high hardness. It is possible that the development of new colored cubic zirconia by doping 3d-transition elements or 4f-rare earth elements. The colored cubic zirconia is representative of synthetic gemstone which was grown up by mixing one or over two materials among $Pr_6O_{11},\;TiO_2,\;MnO_2\;and\;Er_2O_3$ as coloring agent. Subsequent heat treatment improves the quality of color and uniformity. This study is aimed the color reappearance of cubic zirconia such as natural peridot, smoky-quartz and red-tourmaline.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.73-80
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• 1996

The single crystal growth has been carried out with the newly designed 1-T HB(single temperature zone horizontal Bridgman) system for GaAs crystals of 2 inch diameter doped with Si, Zn or undoped. With this method, incidence probability of single crystallinity was shown to be 0.73. Lattice defects evaluated from EPD(etch pit density) measurement were in the range of 5,000-20,000/cm2, dependent upon the doping condition. For the undoped GaAs crystals, carrier concentrations from the Hall measurement were ∼1×1016/cm3 at the seed part, which were less than half the concentrations of double of triple temperature zone(2-T, 3-T) HB grown crystals. By the 1-T HB method, therefore, GaAs crystals can be grown successfully with better yield and higher purity.