• Title/Summary/Keyword: 단결정 박막

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Establishment of Preparation Conditions for High-Tc Superconducting Y-Ba-Cu-O Thin Film by Chemical Vapor Deposition (화학증착법에 의한 고온 초전도 Y-Ba-Cu-O 박막의 제조 조건 확립에 관한 연구)

  • Park, Joung-Shik;Cho, Ik-Joon;Kim, Chun-Yeong;Lee, Hee-Gyoun;Won, Dong-Yeon;Shin, Hyung-Shik
    • Applied Chemistry for Engineering
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    • v.3 no.3
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    • pp.412-421
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    • 1992

  • The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

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A Behavior Magnetization Curves with Strains and Magnetoelastic Anisotropy Energy in Thin Films (자기 박막에서 스트레인에 따른 자화곡선의 거동과 자기탄성에너지)

  • ;R.C.OHandley
    • Journal of the Korean Magnetics Society
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    • v.5 no.2
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    • pp.115-118
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    • 1995

  • We predict the magnetization curves with strains in thin films. It is possible to predict the magretoelastic ani¬sotropy erergy which generates the changes of the M-H curves in thin films. We show the prediction of M-H curves in case of isotropic films such as polycrystalline am amorphous thin films as well as single crystal cubic films.

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Effects of Substrate-Grounding and the Sputtering Current on $YBa_2Cu_3O_{7-y}$ Thin-Film Growth by Sputtering in High Gas Pressures (고압 스터터링 방법으로 $YBa_2Cu_3O_{7-y}$박막을 제조할 때 기판의 접지 여부와 인가전류의 양이 박막 성장에 미치는 영향)

  • 한재원;조광행;최무용
    • Journal of the Korean Vacuum Society
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    • v.4 no.1
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    • pp.40-45
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    • 1995

  • 직경 2인치의 YBa2Cu3O7-y 타겟을 사용하여 높은 스퍼터링 기체 압력 하에서 off-axis DC-마그네트론 스퍼터링 방법으로 MgO(100) 단결정 기판 위에 YBa2Cu3O7-y 박막을 c축 방향으로 in-냐셔 성장시킬 때 기판의 접지 여부와 인가전류의 양이 박막 성장에 미치는 여향을 연구하였다. 그 결과 접지 여부는 박막의 초전도 변환온도, 전기수송 특성, 결정 구조적 특성에는 영향을 거의 주지 않는 반면 표면상태에는 상당한 영향을 미치며, 인가전류의 양은 초전도 특성에 많은 영향을 미침을 발견하였다. 기판온도 $670^{\circ}C$, 스퍼터링 기체압력 300mTorr, 아르곤 대 산소 분압비 5:1의 조건에서 인가전류의 최적량은 300-500 mA이었으며 평균 박막 성장속도는 $0.11-0.14AA$/s로 매우 낮았다. 기판의 접지 효과와 낮은 성장속도의 원인에 대해 고찰해 본다.

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Anisotropic Wet Etching of Single Crystal Silicon for Formation of Membrane Structure (멤브레인 구조 제작은 위한 단결정 실리콘의 이방성 습식 식각)

  • 조남인;강창민
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.4
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    • pp.37-40
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    • 2003

  • We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

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