• Journal of the Korean Chemical Society
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• v.34 no.1
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• pp.37-43
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• 1990

An effect of the spin-orbit coupling interaction of ligand orbitals and the intermixing │3d 〉and│4p > transition metal atomic orbitals on the ground state for a 3$d^9$ system in a strong crystal field of tetragonally distorted tetrahedral symmetry that belongs to the $D_{2d}$ point group has been investigated in this work, applying the degenerate perturbation theory. An LCAO-MO analysis in terms of the known energies of the d-d transitions for the tetragonally distorted $CuCl_4^{2-}$ ion in a single crystal of$Cs_2CuCl_4$shows that the covalent mixing of Cu 3d and ligand Cl 3p orbitals decreases dramatically with increasing Cu 4p contribution. The extent of effect on the energy level splitting for the ground state by the spin-orbit coupling interaction of ligand orbitals decreases significantly in orderTEX>$\Gamma_7(E)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_7(E)$.

• Solar Energy
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• v.12 no.2
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• pp.62-78
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• 1992

The solar cells of $ITO_{(n)}/Si_{(p)}$, which are ITO thin films deposited and heated on Si wafer 190[$^{\circ}C$], were fabricated by two source vaccum deposition method, and their electrical properties were investigated. Its maximum output is obtained when the com- position of the thin film consist of indium oxide 91[mole %] and thin oxide 9[mole %]. The cell characteristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min]. Also, we investigated the spectral response with short circuit current of the cells and found that the increasing of the annealing caused the peak shifted to the long wavelength region. And by experiment of the X-ray diffraction, it is shown to grow the grains of the thin film with increasment of annealing temperature. The test results from the $ITO_{(n)}/Si_{(p)}$ solar cell are as follows. short circuit current : Isc= 31 $[mW/cm^2]$ open circuit voltage : Voc= 460[mV] fill factor : FF=0.71 conversion efficiency : ${\eta}$=11[%]. under the solar energy illumination of $100[mW/cm^2]$.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.316-327
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• 1997

Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.283-283
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• 2010

17~18% 대역의 고효율 결정질실리콘 태양전지를 양산하기 위하여 국내외에서 다양한 연구개발이 수행되고 있으며 국내 다결정실리콘 태양전지 양산에서도 새로운 구조와 개념에 입각한 공정기술과 관련 장비의 국산화에 집중적인 투자를 진행하고 있다. 주지하는 바와 같이, 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지 양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 현재까지 다결정 실리콘 표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 단파장대역에서 광반사율의 감소를 기대할 수 있기 때문에 결정질실리콘 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 알려져 있다. 고효율 다결정실리콘 태양전지 양산공정에 적용하기 위해 마스크를 사용하지 않는, RIE기반 건식 저반사율 결정질실리콘 표면 texturing 패턴연구를 수행하였다. 마스크없이 표면 texturing이 완료된 시료들에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율과 minority carrier들의 life time 분포를 측정하고 검토하여 공정조건을 최적화 하였다. 저반사율의 건식 결정질실리콘 표면 texturing에 가장 적합한 플라즈마파워는 100W 내외로 낮았고 $SF_6/O_2$ 혼합비율은 0.8~0.9 범위엿다. 본 연구에서 확인된 최적의 texturing을 위한 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 상태로서 확인된 최저 평균반사율은 ~14% 내외였고 p-형 결정질실리콘 표면 texturing 패턴과 minority carrier의 life time 상관는 단결정이 16uS대역에서 14uS대역으로 감소하는 반면에서 다결정은 1.6uS대역에서 1.7uS대역으로 오히려 미세한 증가를 보여 다결정 웨이퍼생산과정에서 발생하는 saw-damage 제거의 긍정적 효과와 texturing공정의 표면 결함발생에 의한 부정적 효과가 상쇄되어 큰 변화를 보이지 않는 것으로 해석된다.

• Journal of the Mineralogical Society of Korea
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• v.18 no.1
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• pp.33-43
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• 2005

Three types of clinopyroxenes in alkali basaltic rocks from Jeju Island can be identified on the basis of geochemical and textural data. Type Ⅰ is Cr-rich diopside in spinel peridotites from the upper mantle. Type Ⅱ is augite in fine-grained pyroxenites which are possibly either magmatic vein or metamorphic segregations owing to anatexis of the upper mantle. The augite of Type Ⅱ contains high Ca and Mg and relatively low Ti. Type Ⅲ is thought to be either cumulates or cognate phenocrysts and can be subdivided into Ⅲa, Ⅲb, and Ⅲc based on their occurrence mode. Clinopyroxenes of Type Ⅰ have the highest Mg# and Si and the lowest Ti, whereas those of Type Ⅲhave lower Mg#와 Si and higher Ti. These geochemical characteristics indicate that (Ti+Al/sup Ⅵ/)/Si and Al/sup Ⅵ//Al/sup Ⅵ/ increase from Type Ⅰ to Type Ⅲ. It is possibly interpreted that Type Ⅰ is of the highest pressure origin and Type Ⅲ of the lowest. Fractionation of high-pressure clinopyroxenes would result in evolved undersaturated alkali-enriched liquids, probably producing the alkali-enriched host basaltic rocks in Jeju Island.

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.621-627
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• 1994

Two crystal structures of dehydrated, $Ag^{+}$ and $Ca^{2+}$-exchanged zeolite A treated at $250^{\circ}C$ with 0.15 torr of Cs vapor have been determined by single-crystal X-ray diffraction technique in the cubic space group $Pm{\bar\3m$ at $21(1)^{\circ}C$ (a = 12.344(2) $\AA$ and 12.304(2) $\AA$). Their structures were refined to the final error indices, R (weighted), of 0.091 with 180 reflections, and 0.093 with 179 reflections, respectively, for which I > $3\sigma(I).$ In each structure, Cs species are found at four different crystallographic sites: 3 $Cs^{+}$ ions per unit cell are located at 8-ring centers, ca. 6.81∼7.14 $Cs^{+}$ ions are found on opposite 6-rings on threefold axes in the large cavity, ca. 1.93∼2.03 $Cs^{+}$ ions are found on threefold axes in the sodalite unit, and 0.53∼0.66 $Cs^{+}$ ions lie on opposite 4-rings. Also, ca. 4.12∼4.27 Ag atoms are located near the center of the large cavity. In these structures, excess cesium atoms in a unit cell are associated with other $Cs^{+}$ ions on a single threefold axis to form the linear cationic cluster $(Cs_4)^{3+}$. By blocking 8-rings, the $Cs^{+}$ ions may have prevented silver atoms from migrating out of the structure. The Ag atoms are likely to have formed hexasilver clusters at the centers of the large cavities. Each hexasilver cluster is stabilized by coordination to 14 $Cs^{+}$ ions.

• Nuclear Engineering and Technology
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• v.1 no.2
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• pp.91-101
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• 1969

Resistivity changes of n-type float-zone silicon crystals with 6.4$\times$10$^{14}$ to 1.25$\times$10$^{17}$ phosphorus atoms/㎤ due to irradiation by (1) 1 MeV electrons, (2) two types of research reactors, and (3) $Co^{60}$ ${\gamma}$-ray sources were investigated. The results were analyzed on the basis of a simple exponential formula derived by Buehler. While the formula gave a fair fit in the low fluence range in most cases, the deviation was quite appreciable in the case of 1 MeV electron irradiation, and a linear change gave better fit in some cases. The large change in the carrier removal rate in electron-irradiated samples in the high fluence range was analyzed in detail in terms of the Fermi level cross-over of the defect levels. Based on the damage constants evaluated from the initial portion of data where the formula was applicable, the relative effectiveness of various radiation sources in causing the resistivity change in n-type silicon was compared. The TRIGA Mark II reactor neutrons, for example, were found to be about 40 times more effective than 1 MeV electrons. The dependence of the damage constant on the initial carrier concentration was also examined. The physical basis of the exponential law and the effect of the Fermi level cross-over of the defect levels on the resistivity change in the high fluence ranges are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.333-341
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• 2022

Magnetoelectric (ME) composites are comprised of magnetostrictive and piezoelectric phases. Lots of theoretical and experimental works have been done on ME composites in the last couple of decades. The output performance of ME composites has been enhanced by optimizing the constituent phases, interface layer, dimensions of the ME composites, different operating modes, etc. However, the detailed information about the characterization of ME coupling in ME composites is not provided yet. Therefore, in this tutorial paper, we are giving an insight into the details of measurements of ME voltage coefficient of ME composites both at off-resonance and resonance conditions. A symmetric type Gelfenol/PMN-PZT/Gelfenol ME composites were fabricated by sandwiching (011) 32-mode PMN-PZT single crystal between two Galfenol plates by epoxy bonding are used for the example of ME coupling measurement. The details about the experimental setup used for the measurement of ME voltage coefficient are provided. Furthermore, a step-by-step measurement of ME voltage coefficient using computerized program is demonstrated. We believe the present experimental measurement details can help readers to understand the concept of ME coupling and its analysis.