• Title/Summary/Keyword: 다이플렉서

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Design and Fabrication of a LTCC Diplexer for GSM/CDMA Applications (GSM/CDMA 대역용 LTCC Diplexer설계 및 제작)

  • Kim, Tae-Wan;Lee, Young-Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.7
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    • pp.1267-1271
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    • 2009
  • In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

Improving Stability and Characteristic of Circuit and Structure with the Ceramic Process Variable of Dualband Antenna Switch Module (Dual band Antenna Switch Module의 LTCC 공정변수에 따른 안정성 및 특성 개선에 관한 연구)

  • Lee Joong-Keun;Yoo Joshua;Yoo Myung-Jae;Lee Woo-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.105-109
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    • 2005
  • A compact antenna switch module for GSM/DCS dual band applications based on multilayer low temperature co-fired ceramic (LTCC) substrate is presented. Its size is $4.5{\times}3.2{\times}0.8 mm^3$ and insertion loss is lower than 1.0 dB at Rx mode and 1.2 dB at Tx mode. To verify the stability of the developed module to the process window, each block that is diplexer, LPF's and bias circuit is measured by probing method in the variation with the thickness of ceramic layer and the correlation between each block is quantified by calculating the VSWR In the mean while, two types of bias circuits -lumped and distributed - are compared. The measurement of each block and the calculation of VSWR give good information on the behavior of full module. The reaction of diplexer to the thickness is similar to those of LPF's and bias circuit, which means good relative matching and low value of VSWR, so total insertion loss is maintained in quite wide range of the thickness of ceramic layer at both band. And lumped type bias circuit has smaller insertion itself and better correspondence with other circuit than distributed stripline structure. Evaluated ceramic module adopting lumped type bias circuit has low insertion loss and wider stability region of thickness over than 6um and this can be suitable for the mass production. Stability characterization by probing method can be applied widely to the development of ceramic modules with embedded passives in them.

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The Fabrication and Characterization of Diplexer Substrate with buried 1005 Passive Component Chip in PCB (PCB내 1005 수동소자 내장을 이용한 Diplexer 구현 및 특성 평가)

  • Park, Se-Hoon;Youn, Je-Hyun;Yoo, Chan-Sei;Kim, Pil-Sang;Kang, Nam-Kee;Park, Jong-Chul;Lee, Woo-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.41-47
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    • 2007
  • Today lots of investigations on Embedded Passive Technology using materials and chip components have been carried out. We fabricated diplexers with 1005 sized-passives, which were made by burying chips in PCB substrate and surface mounting chip on PCB. 6 passive chips (inductors and capacitors) were used for the frequency divisions of $880\;MHz{\sim}960\;MHz(GSM)$ and $1.71\;GHz{\sim}1.88\;GHz(DCS)$. Two types of diplxer were characterized with Network analyzer. The chip buried diplexer showed extra 5db loss and a little deviation of 0.6GHz at aimed frequency areas, whereas the chip mounted diplexer showed man. 0.86dB loss within GSM field and max. 0.68dB within DCS field respectively. But few degradations were observed after $260^{\circ}C$ for 80min baking and $280^{\circ}C$ for 10sec solder floating.

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