• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.105-112
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• 2009

In this paper, we investigated abnormal ESD failure on guard-rings in the smart power IC fabricated with $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology. Initially, ESD failure occurred below 200 V in the Machine Model (MM) test due to current crowding in the parasitic diode associated with the guard-rings which are generally adopted to prevent latch-up in high voltage devices. Optical Beam Induced Resistance Charge (OBIRCH) and Scanning Electronic Microscope (SEM) were used to find the failure spot and 3-D TCAD was used to verify cause of failure. According to the simulation results, excessive current flows at the comer of the guard-ring isolated by Local Oxidation of Silicon (LOCOS) in the ESD event. Eventually, the ESD failure occurs at that comer of the guard-ring. The modified comer design of the guard-ring is proposed to resolve such ESD failure. The test chips designed by the proposed modification passed MM test over 200 V. Analyzing the test chips statistically, ESD immunity was increased over 20 % in MM mode test. In order to avoid such ESD failure, the automatic method to check the weak point in the guard-ring is also proposed by modifying the Design Rule Check (DRC) used in BCD technology. This DRC was used to check other similar products and 24 errors were found. After correcting the errors, the measured ESD level fulfilled the general industry specification such as HBM 2000 V and MM 200V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.1-6
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• 2007

This study investigated the magnetic properties of $Ni_{80}Fe_{20}/SiO_2$ laminates with shape-induced magnetic anisotropy. The multilayer films were deposited on Si or upilex substrates, from separate $Ni_{80}Fe_{20}$ and $SiO_2$ (at %) alloy targets using a rf diode sputtering system. $Ni_{80}Fe_{20}/SiO_2$ laminates with a various number of bilayers (N) were prepared. The laminates with ellipse array patterns were prepared using photolithographic technique. The magnetic properties were measured at room temperature using a B-H hysteresisgraph and a high frequency permeameter. The several steps during domain wall reversal were observed in multilayer films, attributing to inter-magnetic layer coupling. Intrinsic uniaxial anisotropy field increases with N. The experimental values of the total anisotropy field are found to be in good agreement with the calculated values. This study utilized the shape anisotropy of the laminated film objects with small ellipse array patterns to induce a larger uniaxial anisotropy so as to maximize their operating frequency.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.

• Korean Journal of Optics and Photonics
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• v.21 no.1
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• pp.26-32
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• 2010

Line lamps, which utilize leaky optical fibers based on periodic bending of plastic optical fibers, are proposed. The LED-optical fiber coupler, the key component of the line lamp, is designed and analyzed. The analysis by the Monte Carlo photon simulation method has shown that the optical coupling efficiency is affected rather sensitively by $\theta_w$, the slanting angle of the reflecting cup sidewall and $\rho_{ref}$, the reflectivity of the reflecting cup. The optical coupling efficiency of the coupler reaches the maximum when $\theta_w$ is about $60^{\circ}$, which is significantly larger than $\theta_w=45^{\circ}$, the typical sidewall slanting angle of the reflecting cup adopted in most LED lamps. When the reflectivity of the reflecting cup is above 0.8, the optical coupling efficiency is larger than 80%, which is the typical efficiency to be achieved in LD-optical fiber coupler.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.199-204
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• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.7
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• pp.293-299
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• 2003

In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.45-52
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• 2008

We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.