• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.567-572
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• 1997

The ZnO powder was prepared under glycothermal conditions by precipitation from metal nitrates with aqueous potassium hydroxide. The fine powder was obtained at temperatures as low as 225 to $275^{\circ}C$, The microstructure and phase of the powder were studied by SEM and XRD. The properties of the ZnO powder were studied as a function of various parameters (reaction temperature, reaction time, solid loading, etc). The average particle size of the ZnO increased with increasing reaction temperature. After glycothermal treatment at $225^{\circ}C$ for 8 h, the average particle size of the ZnO powder was about 150 nm and the particle size distribution was narrow.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.417-427
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• 1992

Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2007.05a
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• pp.375-379
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• 2007

폐비닐 여재(Synthetic Waste Polyethylene Media)를 적용한 부착성장식 공정의 유기물 및 질소${\cdot}$인 제거특성에 관한 Pilot Plant 실험 결과 다음과 같은 결론을 얻을 수 있었다. 1) 제거효율은 $RUNI1{\sim}3$에서 $COD_{cr}$ 91.4, 92.4, 93.9%, T-N 56.9, 61.4, 65.1%, T-P는 모든 단계에서 약 45%이상 제거되어 부하변동시에 강한 대처능력을 나타내었다. 2) BOD용적부하 $0.18{\sim}0.40kg/m^3{\cdot}d$, COD용적부하 $0.28{\sim}0.53kg/m^3{\cdot}d$, ${NH_4}^{+}-N$용적부하 $0.12kg/m^3{\cdot}d$을 나타내었다. 3) 도시하수 처리를 위한 생물학적 질소 및 인 제거공법을 본 여재를 이용하여 공정설계시 고려할 사항들과 적절한 대처방법을 다음과 같이 제시할 수 있다. - 1차 침전지에서 유기질소 및 유기인 농도가 높다면 유기질소 및 인 부하량을 감소시키기 위하여 1차 침전지를 설치하되 질소 및 인제거에 유리한 $BOD_5/T-N$, $BOD_5/T-P$를 유지할 수 있도록 체류시간을 1시간미만으로 설계하는 것이 경제적이라고 판단된다. 만일 유기질소와 유기인의 함량이 낮다면 1차 침전지는 제외하는 것이 유리할 것이다. - 여재의 배치는 폭기조에서 용존산소의 균일분포와 슬러지의 적정탈리를 위해 여재를 상하로 배치하거나 또는 여재끼리 일정 간격을 두어 배치하는 것이 바람직하다. 농촌에서의 처분이 문제시 되고 있는 폐비닐을 적용한 본 연구에서의 수처리특성은 기존 하수처리공정에서의 제거효율에 상응하는 처리특성을 나타내었다. 또한 폐비닐 처분의 문제를 해결할 수 있을뿐만 아니라 하수처리시에도 부하변동 등에 강한 대처능력을 나타내어 기존의 하수처리공정에 대체가능성을 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.9-17
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• 2000

A sensor array with 10 discrete sensors integrated on a substrate was developed for discriminating the kinds and quantities of explosive gases. The sensor array consisted of 10 oxide semiconductor gas sensors with $SnO_2$ as base material and had broad sensitivity to specific gas. The sensor array was designed with uniform thermal distribution and had also high sensitivity and reproductivity to low gas concentration through nano-sized sensing materials with different additives. By using the sensitivity signal of the sensor array at $400^{\circ}C$, we could reliably discriminate the kinds and quantities of explosive gases like butane, propane and methane under the lower explosion limit through the principal component analysis (PCA) method.

• Journal of the Korean Society of Propulsion Engineers
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• v.16 no.1
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• pp.36-44
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• 2012

Multi-injector rocket engine using high-concentrated hydrogen peroxide and kerosene was designed and manufactured. Design requirements of a rocket engine were determined and main geometrical parameters of rocket engine were determined on the basis of fundament. Six coaxial swirl injectors were mounted on the multi-injector engine. Flow analysis in the hydrogen peroxide manifold was performed to minimize stagnation and recirculation zones. Finally, the optimized hydrogen peroxide manifold was manufactured and cold flow test was carried out to confirm mass flow rate per uni-element, spray pattern and atomization characteristics. The results of cold flow test showed that the mixing head design process was successful and enough to use as a essential database for the development of a full-scale engine.

• Journal of the Korean Chemical Society
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• v.44 no.3
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• pp.200-206
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• 2000

The metal impurities in specific regions at near surface of silicon wafer were determined by constant depth etching·lt is possible to etch uniformly over the entire wafer surface by 1$\mu\textrm{m}$ depth with 5 mL of etching solution made up of HF and HNO$_3$ mixed by l:3 volume ratio. The microwave oven was used to evaporate the solution after etching. After spiking, The recoveries of Cu, Ni, Zn, Cr, Mg and K were found to be 99∼105%ted in polysilicon region and could be quantified by 1$\mu\textrm{m}$ depth.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.165-169
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• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.108-117
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• 2001

A sensor array with 10 discrete sensors integrated on a substrate w3s developed for discriminating the kinds and quantities of inflammable gases, like butane, propane, methane, LPG, carbon monoxide. The sensor array consisted of 10 metal oxide semiconductor gas sensors using the nano-sized $SnO_2$ as base material and had differentiated sensitivity patterns to specific gas. The sensor array was designed with uniform thermal distribution and had also high sensitivity and good reproductivity to low gas concentration through nano-sized sensing materials with different additives. By using the sensing patterns of the sensor array at $400^{\circ}C$, we could reliably discriminate the kinds and quantities of the tested inflammable gases under the lower explosion limit through the principal component analysis(PCA).

• Polymer(Korea)
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• v.35 no.5
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• pp.478-482
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• 2011

In this study, several poly(styrene-co-(trimethoxysilyl)propyl methacrylate)-grafted ETFE films were prepared by a simultaneous irradiation grafting method. After mixing of styrene/(trimethoxysilyl)propyl methacrylate(TMSPM) monomers with various solvents, the effects of various irradiation conditions such as total dose, dose rate and monomer concentration on the degree of grafting of the prepared membranes were investigated. Results indicated that the higher degree of grafting was obtained when acetone was used as a solvent. The formation of poly(styrene-co-TMSPM) grafts on the ETFE films was verified using FTIR spectrometry and the distribution of the poly(PTMSPM) graft polymer over the cross-section of the grafted film was confirmed using SEM-EDX instrument.