• Title/Summary/Keyword: 내결함

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Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

Optical Properties of SiNx Thin Films Grown by PECVD at 200℃ (200℃의 저온에서 PECVD 기법으로 성장한 SiNx 박막의 열처리에 따른 광학적 특성 변화 규명)

  • Lee, Kyung-Su;Kim, Eun-Kyeom;Son, Dae-Ho;Kim, Jeong-Ho;Yim, Tae-Kyung;An, Seung-Man;Park, Kyoung-Wan
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.42-49
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    • 2011
  • We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

A Study on Constitution of Plant Safety Inspection System for Measuring Joint Axial Force of High Tension Bolt (고장력 볼트의 체결축력 측정을 위한 설비 안전 검사 시스템 구축에 관한 연구)

  • Kim, J.Y.;Park, S.G.;Kim, H.S.;Kim, C.H.;You, S.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.15 no.2
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    • pp.371-377
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    • 1995
  • By using ultrasonic waves, we obtained conclusion from the experiment for measuring joint axial force of high tension bolt. The conclusion is followed. : From the high tension bolts used at turbine of Thermoelectric Power Plant, we obtained the equation of calculating joint axial force that is ${\sigma}=\frac{{\Delta}BPD}{j{\times}{\Sigma}{\delta}}$. By using IBM PC, which is inputed by the equation for calculating joint axial force of high tension bolts, we got joint axial force of high tension bolts form beam path of ultrasonic waves. Furrther, we can identify that constitution of plant safety inspection system is possible.

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Morphology of Styetched Poly(ethylene terephthalate)/ Poly(m-xylene adipamide) Blends (연신된 폴리(에틸렌 테레프탈레이트)/ 폴리(메타-자이렌 아디프아미드) 블렌드의 형태구조)

  • 남주영;박수현;이광희;정지원;박동화
    • Polymer(Korea)
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    • v.27 no.4
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    • pp.313-322
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    • 2003
  • The morphology of poly(ethylene terephthalate) (PET)/poly(m-xylene adipamide) (MXD-6) blends, which was prepared by adding compatibilizer and interchange reaction agent, was investigated. The morphological change in the stretched blend films was also studied. The stretched film showed a dispersed MXD-6 fibril. This fibril became finer with increasing draw ratio (DR). The addition of compatibilizer and interchange reaction agent had no effect on the improvement of interfacial adhesion but caused a defect between the continuous phase and the dispersed phase, leading to the formation of irregular fibril. The change in the superstructure of blends with composition and draw ratio was examined with light scattering (LS). The H$\sub$v/ LS patterns showed a double-cross type pattern consisting of a broad rod-like pattern and a sharp cross streak. On the basis of the model calculation of the H$\sub$v/ pattern, it was found that the appearance of the double-cross type pattern was attributed to the stacking of crystals oriented along the draw direction. The crystals were gradually oriented to the stretching direction with draw ratio. As a result, the high level of orientation was obtained fur the sample of draw ratio is 6.0.

Development of Smart Active Layer Sensor (I) : Theory and Concept Study (스마트 능동 레이어 센서 개발 (I): 이론 및 개념 연구)

  • Yoon, Dong-Jin;Lee, Young-Sup;Kwon, Jae-Hwa;Lee, Sang-Il
    • Journal of the Korean Society for Nondestructive Testing
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    • v.24 no.5
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    • pp.465-475
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    • 2004
  • This paper is the first part of the study on the development of a smart active layer (SAL) sensor, which consists of two parts. In this first part, the theory and concept of the SAL sensor is investigated, which is designed for the detection of elastic waves caused by internal cracks and damages in structures. For the development SAL sensor, (i) the basic theory of elastic waves was studied, (ii) the feasible study of the SAL as an elastic waves detection sensor using the finite element analysis (FEA) with respect to a piezoceramic disc was performed. (iii) the comparison of performances between some piezoceramic sensors and a commercial acoustic emission (AE) sensor was accomplished to ensure the applicability by the experimental means, such as a pencil lead break test. Also, the conceptional study for the SAL sensor, which can be utilized for the effective detection and locating of defects by the arrangement of regularly distributed sensors, was discussed.

Deposition process of Multi-layered Al-%Cu/Tungsten Nitride Thin Film (Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막)

  • Lee, Gi-Seon;Kim, Jang-Hyeon;Seo, Su-Jeong;Kim, Nam-Cheol
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.624-628
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    • 2000
  • As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= $N_2$/($N_2$+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as $3.6{\mu}{\Omega}-cm$, which was due to grain growth reduced crystal defects.

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Development of Ultrasonic Testing System for In-Service Inspection of the Shrunk-on Type LP Turbine Roter (Shrunk-on Type 저압 터빈 로터의 가동중검사를 위한 초음파검사 시스템 개발)

  • Park, Joon-Soo;Seong, Un-Hak;Ryu, Sung-Woo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.2
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    • pp.130-136
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    • 2009
  • Turbine, which is one of major components in nuclear power plants, requires reliable nondestructive inspections. But, accessibility of transducers is limited and interpretation of acquired signals is not easy at all due to the complication. So, in this study, we have fabricated mock-up specimens of real size and shape. we applied pulse-echo method and time-of-flight diffraction(TOFD) method for precise inspection of turbine key and wheel bore. And phased array ultrasonic testing method was adopted for wheel dovetail of turbines by using mock-up. Furthermore, an automatic scanner system was developed for in-service inspection of the developed methods.

Impact and Damage Detection Method Utilizing L-Shaped Piezoelectric Sensor Array (L-형상 압전체 센서 배열을 이용한 충격 및 손상 탐지 기법 개발)

  • Jung, Hwee-Kwon;Lee, Myung-Jun;Park, Gyuhae
    • Journal of the Korean Society for Nondestructive Testing
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    • v.34 no.5
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    • pp.369-376
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    • 2014
  • This paper presents a method that integrates passive and active-sensing techniques for the structural health monitoring of plate-like structures. Three piezoelectric transducers are deployed in a L-shape to detect and locate an impact event by measuring and processing the acoustic emission data. The same sensor arrays are used to estimate the subsequent structural damage using guided waves. Because this method does not require a prior knowledge of the structural parameters, such as the wave velocity profile in various directions, accurate results could be achieved even on anisotropic or curved plates. A series of experiments was performed on plates, including a spar-wing structure, to demonstrate the capability of the proposed method. The performance was also compared to that of traditional approaches and the superior capability of the proposed method was experimentally demonstrated.

Cloning of Acetyl CoA Carboxylase (fabE) in Escherichia coli (대장균의 acetyl CoA carboxylase유전자의 클로닝)

  • Park, Wan;Song, Bang-Ho;Hong, Soon-Duk
    • Microbiology and Biotechnology Letters
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    • v.14 no.2
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    • pp.181-186
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    • 1986
  • A defective lambda transducing phase carrying acetyl CoA carboxylase gene (fabE) from Escherichia coli chromosome (72 min on the current linkage map) has been isolated. A restriction map of the chromosomal region from defective transducing phage was established by digestion with combination of the restriction enzymes. No cleavage site for the enzyme EcoRI was found in this region. Restriction fragments were cloned from defective transducing phage into high copy number plasmid vector pACYC184 to generate hybrid plasmids which were capable of complementation of fabE temperature sensitive mutation. We show here that the fabE gene is located on a 3.4 megadalton Bam HI-SalI fragment with a HindIII site, which lies within the 7.4 megadalton BglIIfragment, by complementation analysis.

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Rapid Detection of Salmonella spp. by Antibody-Immobilized Piezoelectric Crystal Biosensor (고정화법을 달리하여 제조한 압전류적 항체 센서에 의한 Salmonella spp.의 신속 검출)

  • 박인선;김우연;김남수
    • Journal of Food Hygiene and Safety
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    • v.13 no.3
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    • pp.206-212
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    • 1998
  • An improved antibody-coated sensor system based on quartz crystal microbalance was developed for the detection of Salmonella spp. An antibody against Salmonella common structural antigen was immobilized onto one gold electrode of the piezoelectric quartz crystal surface by various immobilization procedures. The best results in sensitivity and stability were obtained with the thin layers of protein A and 3,3'-dithiopropionimidate.2HCI(DTBP), a homobifunctional thiol-cleavable crosslinker. After the addition of a S. typhimurium suspension into a reaction cell with 0.1 M sodium phosphate buffer, pH 7.2, the resonant frequency owing to S. typhimurium adsorption decreased conspicuously. The antibody-immobilized crystals prepared by the gold-protein A complex formation and DTBP thiolation showed the frequency shifts of 80 and 283 Hz, respectively. The time required for maximum frequency shift was about 30~60 min. The antibody-coated crystal could be reused for 6~8 consecutive assays.

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