• 제목/요약/키워드: 나노 분말

검색결과 1,150건 처리시간 0.035초

ZnO 나노분말 및 고투명성 자외선 차단 분산 졸의 제조 (Preparation of ZnO Nano Powder and High-transparent UV Shielding Dispersion Sol)

  • 이헌동;김진모;손대희;이승호;박성수
    • 공업화학
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    • 제24권4호
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    • pp.391-395
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    • 2013

  • 본 연구에서는 자외선 흡수 물질로 잘 알려진 zinc oxide (ZnO) 나노분말을 세 가지 합성조건에서 수열합성법으로 합성하였다. 또한, 분산성을 향상시키기 위하여 합성된 ZnO 나노분말의 표면을 다양한 실란계 계면활성제를 사용하여 표면 개질하였고, 표면개질된 ZnO 나노분말을 분산제로 72 h 동안 볼밀링하여 분산 졸 시료를 제조하였다. 30 nm 크기로 합성된 ZnO 나노분말을 3-chloropropyl trimethoxy silane로 표면개질하여 폴리우레탄계 분산제로 제조한 분산 졸 시료가 가장 높은 자외선 차단 특성 및 가시광 투과율을 가지면서 분산 안정성이 가장 우수하였다.

  • KSCI

NiO 완충층 두께 조절에 의한 OLEDs 전기-광학적 특성 (Electrical and Luminescent Properties of OLEDs by Nickel Oxide Buffer Layer with Controlled Thickness)

  • 최규채;정국채;김영국;조영상;최철진;김양도
    • 대한금속재료학회지
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    • 제49권10호
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    • pp.811-817
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    • 2011

  • In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

  • https://doi.org/10.3365/KJMM.2011.49.10.811 인용 KSCI