• Title/Summary/Keyword: 나노 기술

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Characterization of CdS-quantum dot particles using sedimentation field-flow fractionation (SdFFF) (침강 장-흐름 분획법을 이용한 CdS 양자점 입자의 특성 분석)

  • Choi, Jaeyeong;Kim, Do-Gyun;Jung, Euo Chang;Kwen, HaiDoo;Lee, Seungho
    • Analytical Science and Technology
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    • v.28 no.1
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    • pp.33-39
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    • 2015
  • CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

R&D Strategy Development for Nanotechnology Areas based on Efficiency Comparisons (효율성 비교를 통한 나노기술 분야별 R&D 전략 수립)

  • Bae, Seoung-Hun;Kim, Jun-Hyun;Jung, Yeon-Ju;Kang, Sang-Kyu;Kim, Jae-Sin;Kim, Heung-Kyu
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.40 no.2
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    • pp.31-40
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    • 2017
  • In this paper, we compared the efficiencies of national R&D investments between NT (Nanotechnology) areas in terms of papers, patents, and commercializations, and found ways to improve the efficiencies of national R&D investments for each NT area. This is in response to huge R&D investments government has made recently in NT areas. Here, we collected data on investments, papers, patents, and commercializations for the R&D projects in NT areas through National Science & Technology Information Service. Based on the data, we analyzed the investment and performances (papers, patents, and commercializations) for each NT area, calculated the efficiency for each NT area, and compared the efficiencies between NT areas. Next, using cluster analysis, we identified several NT areas with similar characteristics in terms of paper efficiency, patent efficiency and commercialization efficiency. Finally, we derived implications for the efficiency enhancement for each grouping. The cluster analysis showed that there could be two groups, one being low in terms of technological outcome (papers and patents) efficiencies and high in terms of commercialization efficiencies, while the other being high in terms of technological outcome (papers and patents) efficiencies and low in terms of commercialization efficiencies. Therefore, the strategy for one group calls for support for technology transfer or technology introduction from other R&D performers and grant of guidance for improving R&D performers' commercialization ability to other R&D performers while the strategy for the other group calls for R&D support for transfer of technology to other R&D performers, activation of technology transfer and support for commercialization of R&D performers.

플라즈마 표면 처리를 이용한 ZnO 습식성장 패터닝 기술 연구

  • Lee, Jeong-Hwan;Park, Jae-Seong;Park, Seong-Eun;Lee, Dong-Ik;Hwang, Do-Yeon;Kim, Seong-Jin;Sin, Han-Jae;Seo, Chang-Taek
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.330-332
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    • 2013
  • 소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$$CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

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Kinetics of Photocatalytic Reactions with Porous Carriers Coated with Nano-$TiO_2$ Particles (나노-$TiO_2$ 입자로 코팅된 다공성 담체의 광촉매 반응에 관한 동력학)

  • Park, Seong-Jun;Rittmann, Bruce E.;Bae, Woo-Keun
    • Journal of Korean Society of Environmental Engineers
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    • v.31 no.10
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    • pp.927-932
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    • 2009
  • Toxic and recalcitrant organic pollutants in wastewaters can be effectively treated when advanced oxidation and biodegradation are combined, ideally with intimate coupling, in which both processes occur simultaneously in the same system. One means to achieve intimate coupling is to coat nanoscale $TiO_2$ on the outside of macroporous biofilm carriers. This study investigated the kinetics of photocatalysis with $TiO_2$-coated porous carriers. The carriers were made of polyvinyl alcohol (PVA) and coated with $TiO_2$ using a low-temperature sol-gel process. The $TiO_2$-coated carriers catalyzed the oxidation of methylene blue (MB) effectively under irradiation of UV light. The overall reaction rate with adsorption and photolysis saturated at high MB concentration, and approached the adsorption rate, which was first order for all MB concent rations. This result indicates that adsorbed MB may have slowed photocatalysis by blocking active sites for photocatalysis. The overall kinetics could be described by a quasi-Langmuir model. The estimated maximum specific (per unit mass of $TiO_2$) transformation rate of MB by the $TiO_2$-coated carriers was four times larger than that obtained from slurry-$TiO_2$ reactors. This observation demonstrated that the $TiO_2$ present as a coating on the carriers maintained high efficiency for transforming recalcitrant organic matter via photocatalysis. These findings serve as a foundation for advancement of an intimate coupling of photocatalysis to biodegradation.

A study on the structure of Si-O-C thin films with films size pore by ICPCVD (ICPCVD방법에 의한 나노기공을 갖는 Si-O-C 박막의 형성에 관한 연구)

  • Oh, Teresa
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.477-480
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    • 2002
  • Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

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Public and Experts Perception Analysis about Negative Effects in Nanotechnology Based on Conjoint Analysis (컨조인트 분석을 이용한 나노기술의 부정적 영향에 대한 일반인과 전문가의 인식분석)

  • Bae, Seoung Hun;Shin, Kwang Min;Yoon, Jin Seon;Kang, Sang Kyu;Kim, Jun Hyun;Sung, Gi Wan;Lee, Ki-Kwang
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.38 no.3
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    • pp.49-55
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    • 2015
  • Nanotechnology has been growing constantly and it is becoming the leading technology in scientific research and development. Although nanotechnology has important applications in broad variety of fields without boundary of any particular industrial area, the study of nanotechnology related to its commercialization has been conducted in a few ways. To put that figure in context, this study investigates public and expert perceptions about negative potentials of nanotechnology. Through a series of surveys with public (N = 541) and experts (N = 62), we analyzed about public willingness to pay for nano-applied products. Survey results showed that public and experts preferred nano-applied products in the order of electronics, cosmetics, and food and medicine. Experts express high payment intention to electronics rather than public intention. In addition, the survey results showed the purchasing intention of both public and expert group was affected by the attributes of nano-applied products in the order of risk fatality, risk chance, certification, and labeling. But experts put more importance in risk fatality than risk chance comparing to public. Through the case analysis of the effects of labeling and certification, we revealed either labeling or certification can induce both public and experts to buy the nano-applied products with high risk chance and low risk fatality. However, for the nano-applied product with high risk fatality and low risk chance, both labeling and certification are simultaneously required to make customers have positive purchasing intention. The result of this study could be utilized for the nanotechnology-based company to get the consumer behavior information about nano-based product and to establish their marketing strategy.

The New Technology Development Strategy of Cosmeceuticals with Use Advanced Materials Resources (신소재 자원을 활용한 기능성화장품의 신기술 개발전략)

  • Kim Ju-Duck
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.30 no.3 s.47
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    • pp.427-438
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    • 2004
  • Cosmeceuticals products we not the products simply for moisturizing and protecting skin but the ones for encouraging to make improvements on wrinkles and helping to whiten, tan, and protect skin against ultraviolet light. In a broader sense, they refer to products with aiming to maintain healthy condition of skin such that skin troubles could be improved or aging of skin could be delayed. However, cosmeceuticals should not have any side effects because they are applied to the whole body for a long period of time differing from medical products which are used on specific areas for a short time. The number of such cosmeceuticals has increased from 500 in 2001 to 2300 in 2003. In order to develop and broaden the scope of cosmeceuticals, the concept of cosmetics needs to be changed from caring skin to delaying aging of the skin and reviving cells. For this purpose, high-valued materials should be developed through basic researches related to the biological function of skin, in vivo experiment and reaction of skin in response to various stimuli using biotechnologies and bioengineering methods. At the same time, it should be proceeded to develop new nano materials for overcoming skin barriers and transfer matericals for helping to absorb effective substances and maintaining stability.

Introduction to Electrochemical Quartz Crystal Microbalance Technique for Leaching Study of Metals (금속 침출연구를 위한 전기화학적 미소수정진동자저울 기술 소개)

  • Kim, Min-seuk;Chung, Kyeong Woo;Lee, Jae-chun
    • Resources Recycling
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    • v.29 no.1
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    • pp.25-34
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    • 2020
  • Electrochemical Quartz Crystal microbalance is a tool that is capable of measuring nanogram-scale mass change on electrode surface. When applying alternating voltage to the quartz crystal with metal electrode formed on both sides, a resonant frequency by inverse piezoelectric effect depends on its thickness. The resonant frequency changes sensitively by mass change on its electrode surface; frequency increase with metal dissolution and decrease with metal deposition on the electrode surface. The relationship between resonant frequency and mass change is shown by Sauerbrey equation so that the mass change during metal dissolution can be measured in real time. Especially, it is effective in the case of reaction mechanism and rate studies accompanied by precipitation, volatilization, compound formation, etc. resulting in difficulties on ex-situ AA or ICP analysis. However, it should be carefully considered during EQCM experiments that temperature, viscosity, and hydraulic pressure of solution, and stress and surface roughness can affect on the resonant frequency. Application of EQCM was shown as a case study on leaching of platinum using aqueous chlorine for obtaining activation energy. A platinum electrode of quartz crystal oscillator with 1000 Å thickness exposed to solution was used as leaching sample. Electrogenerated chlorine as oxidant was purged and its concentration was controlled in hydrochloric acid solution. From the experimental results, platinum dissolution by chlorine is chemical reaction control with activation energy of 83.5 kJ/mol.

Recent Progress in Conductive Polymer-based Membranes (전도성 고분자 분리막의 최근 연구동향)

  • Park, Shinyoung;Patel, Rajkumar
    • Membrane Journal
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    • v.31 no.2
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    • pp.101-119
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    • 2021
  • The demand for clean water is virtually present in all modern human societies even as our society has developed increasingly more advanced and sophisticated technologies to improve human life. However, as global climate change begins to show more dramatic effects in many regions in the world, the demand for a cheap, effective way to treat wastewater or to remove harmful bacteria, microbes, viruses, and other solvents detrimental to human health has continued to remain present and remains as important as ever. Well-established synthetic membranes composed of polyaniline (PANI), polyvinylidene fluoride (PVDF), and others have been extensively studied to gather information regarding the characteristics and performance of the membrane, but recent studies have shown that making these synthetic membranes conductive to electrical current by doping the membrane with another material or incorporating conductive materials onto the surface of the membrane, such as allotropes of carbon, have shown to increase the performance of these membranes by allowing the adjustability of pore size, improving antifouling and making the antibacterial property better. In this review, modern electrically conductive membranes are compared to conventional membranes and their performance improvements under electric fields are discussed, as well as their potential in water filtration and wastewater treatment applications.

High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.