• 제목/요약/키워드: 나노스텐실

검색결과 7건 처리시간 0.026초

FIB 밀링을 이용한 나노스텐실 제작 및 나노패터닝 (Fabrication of nanostencil using FIB milling for nanopatterning)

  • 정성일;오현석;김규만
    • 한국정밀공학회지
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    • 제23권3호
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    • pp.56-60
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    • 2006
  • A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

FIB 밀링을 이용한 나노스텐실 제작 (Nanostencil fabrication using FIB milling)

  • 김규만;정성일;오현석
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.871-874
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    • 2004
  • Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

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나노스텐실 제작을 위한 집속이온빔 밀링 특성 (Focused Ion Beam Milling for Nanostencil Lithography)

  • 김규만
    • 한국정밀공학회지
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    • 제28권2호
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    • pp.245-250
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    • 2011
  • A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

나노스텐실 제작을 위한 FIB 밀링 특성 (FIB milling on nanostencil membrane)

  • 김규만;정성일;오현석
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.318-321
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    • 2005
  • FIB (Focused ion Beam) milling on a 500-nm-thick silicon nitride membrane was studied in order to fabricate a high-resolution shadow mask, or called a nanostencil. The silicon nitride membrane was fabricated by MEMS processes of LPCVD, photolithography, ICP etching and bulk silicon etching. The apertures made by FIB milling and normal photolithography were compared. The square metal pattern deposited through FIB milled shadow mask showed 6 times smaller comer radius than the case of photolithography. The results show high resolution patterning could be achieved by local deposition through FIB milled shadow-mask.

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수직전류 인가형 나노 스핀소자의 제조 및 자기저항 특성 (The Fabrication and Magnetoresistance of Nanometer-sized Spin Device Driven by Current Perpendicular to the Plane)

  • 전명길;이현정;정원용;김광윤;김철기
    • 한국자기학회지
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    • 제15권2호
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    • pp.61-66
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    • 2005
  • 서브 마이크론 크기의 셀을 제조하기 위하여 종래의 방식인 전체시료구조를 증착한 후 이온밀링 방식으로 제조하는 대신에 Pt 스텐실 마스크 공정과 e-beam 리소 및 습식 식각 공정을 이용하여 배치형 submicron 셀을 lift-off 방식으로 제조하였다. $500nm{\times}500 nm,\;200nm{\times}300 nm$ 크기에 $CoFe(30 {\AA})/Cu(100{\AA})/CoFe(120{\AA}$) 3층 구조를 셀내에 증착하고 수직전류를 인가하여 자기저항 특성을 조사하였다. 자기저항 특성은 두 자성층의 보자력 차이를 이용하여 스핀의 반평형 구조를 유도하여 슈도 스핀밸브이며 각 셀의 크기에서 1.1, $0.8{\%}$의 자기저항비가 얻어졌다. 또한 전류인가에 따른 저항변화로부터 스핀전달 효과에 따른 스위칭 변화가 일어남을 확인하였으며, 이 구조에서 저항의 변화로부터 측정된 임계전류밀도는 약 $7.65{\times}10^{7}A/cm^2$였다.