• Applied Chemistry for Engineering
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• v.9 no.3
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• pp.355-360
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• 1998

Reduction activity of precious metal-loaded HZSM-5 for NO has been studied and was compared to that of Cu-HZSM-5 in the presence of excess oxygen. It was found that among the catalysts used in this study, Ru-HZSM-5 was the most active catalyst for the reduction of NO to $N_2$ in the absence of hydrocarbon reductant. The highest conversion obtained was 45%. No severe inhibition of water vapor to the reduction was observed. It is suggested that the higher catalytic activity of Ru-HZSM-5 may result from the better ability to oxidize NO to $NO_2$ in the presence of excess oxygen. A proposed reaction mechanism for the reduction of NO to $N_2$ in the presence of excess oxygen is that NO is oxidized to $NO_2$ on the surface of Ru-HZSM-5 catalyst and the adsorbed $NO_2$ on the surface is then decomposed to $N_2$. $NO_2$ is supposed to the reaction.

• Applied Chemistry for Engineering
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• v.5 no.3
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• pp.509-516
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• 1994

Liquid phase hydrogenation come into use for the removal process of unsaturated hydrocarbon such as croton aldehyde. The croton aldehyde is generated in a very small amount as by-product in the ethanol production, and it is converted into n-butanol through hydrogenation. Liquid phase hydrogenation is low energy consumption process as compared with gas phase hydrogenation. The nickel catalyst is selected with respect to the economic aspect such as durability and cost. The analysis of the conversion were performed by method of the PMT(permangante time) test. The PMT was sharply decreased as the initial concentrations of croton aldehyde in the ethanol solution were increased. The hydrogenation of croton aldehyde to n-butanol was carried out in sequence after the saturation of the carbon-carbon double bond. The formation of both butyraldehyde and n-butanol followed zero order kinetics. Within expermental conditions the PMT gets longer as reaction temperature goes higer and as LHSV becomes slower, while the reaction pressure has almost no relation with PMT.

• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.385-391
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• 2000

A kinetic study on the preparation of iron powder by hydrogen reduction of ferrous chloride vapor has been carried out both experimentally and theoretically. For the preparation of iron powder, ferrous chloride was vaporized and transported to a reaction zone by Ar gas used as carrier. Ferrous chloride vapor and hydrogen were mixed and subject to a reduction reaction at high temperature to produce iron powder and HCI gas. Iron powder was collected with organic solvent at the end of reaction zone and HCI gas was also absorbed in a caustic soda solution to determine the conversion ratio of ferrous chloride. For the development of rate equations, a 1st-order reaction and equilibration of ferrous chloride vapor with Ar gas were assumed. According to the results, the rate constant, k could be expressed as $k=7,879exp(-53,840/RT)\textrm{dm}^3/mole.sec$ and the activation energy was found to be 53.84kJ/mole. From TEM observation, the particle size distribution of iron powder produced was found to be in the range of $0.1~1.0{\mu\textrm{m}}$ which was not significantly influenced by reaction temperature or gas flow rates.

• Applied Chemistry for Engineering
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• v.4 no.1
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• pp.162-170
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• 1993

Vapor-phase ETBE(ethyl tert-butyl ether) synthesis from TBA(tert-butyl alcohol) and ethanol was carried over solid acid catalysts such as heteropoly acids and proton type zeolites. Heteropoly acids were more active than proton type zeolites and $H_4SiW_{12}O_{40}$ catalyst showed about the same activity as Amberlyst-15 ion exchange resin catalyst used as an industrial catalyst in ETBE synthesis. The catalytic activity of transition metal exchanged heteropoly acids was greatly enhanced, because new acid site was generated with hydrogen reduction. This effect of hydrogen reduction was related to the reduction characteristics of catalysts and the order of reducibility was $Ag^+$>$Cu^{2+}$>$Fe^{2+}$.

• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.561-564
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• 2006

Fe, Co, Zn, Cu, Pt 등의 전이금속과 ZSM-5 2종($SiO_2/Al_2O_3$ 몰비: 23, 50)과 ${\gamma}-alumina$를 담체로 사용하여 촉매를 합성하였다. 합성방법은 CVD(화학기상증착법) 과 Dry Impregnation (건식함침법)방법이었다. CVD 방법으로 얻은 Fe/ZSM-5는 지지체로 사용된 ZSM-5의 $SiO_2/Al_2O_3$의 몰 비가 작을수록, 즉 산점의 수가 많을수록 Fe 담지 량이 증가하는 것으로 보인다. 등온 환원 온도 $400^{\circ}C$에서 수소 환원 양이 최대로 나타나며, 이는 보고되는 $400^{\circ}C$에서의 최대 NOx 제거 반응 속도와 비례하는 것으로 나타난다.

• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.247-255
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• 2014

$La_{0.8}Sr_{0.2}CuO_3$ powder with the perovskite structure was prepared as electrode catalyst using citrate method. Porous electrode was made with as-prepared catalyst, carbon as supporter and polytetrafluoroethylene (PTFE) as hydrophobic binder. As results of potentiostatic electrolysis with potential of -1.5~-2.5 V vs. Ag/AgCl in 0.1, 0.5 and 1.0 M KOH at 5 and $10^{\circ}C$ on the porous electrode, liquid products were methanol, ethanol, 2-propanol and 1, 2-butanol regardless reaction temperature, while gas products were methane, ethane and ethylene at $5^{\circ}C$, and methane, ethane and propane at $10^{\circ}C$ respectively. Optimal potentials for $CO_2$ reduction in the view of over all faradic efficiency were high values (-2.0 and -2.2 V) for gas products whereas low potential (-1.5 V) for liquid products regardless of concentration and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.305-305
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• 2007

고경도 및 내침식재료가 새로운 기계구조 및 기계 절삭공구재료로서 각광을 받고 있으며 질화붕소(BN)는 고융점, 고경도의 물리적 특성으로 다이아몬드 대체 물질로 주목되고 있다. 원하는 질화붕소의 합성을 위해서는 출발 원료와 합성법에 의존하는 것으로 보고되고 있다. 본 연구에서는 붕소 산화물과 환원제로써 활성 탄소를 출발 원료로 하였으며 치환제로써 질소를 사용하여 기상 반응로에서 질화붕소를 합성하였다. 합성된 시료는 XRD, SEM, PSA 등으로 물성을 측정하였고 합성 변수에 따라 순도의 차이를 보였으며, 본 연구를 통하여 최적의 합성 조건을 제시할 수 있었다.