• Title/Summary/Keyword: 기상 염소화법

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Removal of Fe, Si from Silicon Carbide Sludge Generated in the Silicon Wafer Cutting Process (실리콘 웨이퍼 절단공정(切斷工程)에서 발생(發生)하는 실리콘 카바이드 슬러지로부터 철(鐵), 실리콘 제거(除去))

  • Park, Hoey Kyung;Go, Bong Hwan;Park, Kyun Young;Kang, Tae Won;Jang, Hee Dong
    • Resources Recycling
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    • v.22 no.2
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    • pp.22-28
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    • 2013
  • In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.