• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.257-264
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• 1985

Dioxobis(3-methoxysalicyaldehydato)molybdeum(VI) complex has been synthesized by reactions of 3-methoxysalicylaldehyde and ammonium paramolybdate in methanol solution. With appropriate primary amine, the resulting complex gave schiff-base complexes, MoO$_2$(CH$_3$O-sal-N-R)$_2$ in which C=O oxide ligands had been replaced by nitrogen. The properties and possible molecular structure of these complexes were discussed by elemental analysis, spectroscopic studies and electric conductivities measurements. It was found that the Mo(VI) complexes contain a cis-MoO$_2$ group since their infrared spectra two Mo=O band at about 900cm$^{-1}$ and the combining ratios for MoO$_2$-ligand are 1 : 2. Also, electronic spectra of molybdenyl complexes assigned to ligand-to-metal charge transfer transition. All of these complexes are yellow or orange, depolar compound and slightly soluble in alcohol, dichloromethane, chloroform and N,N-dimethylformamide.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.124-124
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• 2000

다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가진 입방정 질화붕소(cubic boron nitride)는 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되는 재료이다. 특히 탄화물형성원소에 대해 안정하여 철계금속의 가공을 위한 공구재료로의 응용 또한 크게 기대된다. 이 때문에 각종의 PVD, CVD 공정을 이용하여 c-BN 박막의 합성에 대한 연구가 광범위하게 진행되어 많은 성공사례들이 보고되고 있다. 그러나 c-BN 박막의 유용성에도 불구하고 아직 실제적인 응용이 이루어지지 못한 것은 c-BN 박막의 증착직후 급격한 박리현상 때문이다. 본 연구에서는 평행자기장을 부가한 ME-ARE(Magnetically Enhanced Activated Reactive Evaporation)법을 이용한 c-BN 박막의 합성에서 적용한 증착공정 인자들의 변화에 따른 박리특성 고찰과 함께 다층박막화 및 제 3원소 혼입 방법을 적용하여 박리특성 향상 정도를 조사하였다. BN 박막합성은 전자총에 의해 증발된 보론과 (질소+아르곤) 플라즈마의 활성화반응증착(Activated Reactive Evaporation)에 의해 이루어졌다. 기존의 ARE 장치와 달리 열음극(got cathode)과 양극(anode) 사이에 평행자기장을 부가하여 플라즈마의 증대시켜 반응효율을 높였다. 합성실험용 모재로는 p-type으로 도핑된 (100) Si웨이퍼를 30$\times$40mmzmrl로 절단 후, 10%로 희석된 완충불산용액에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였다. 박막실험실에서의 주요공정변수는 기판바이어스 전압, discharge 전류, Ar/N2가스유량비이었다. 합성된 박막의 결정성 분석을 FTIR을 이용하였으며, BN 박막의상 및 미세구조관찰을 위해 투과전자현미경(TEM;Philips EM400T) 분석을 병행하였고, 박막의 기계적 물성 평가를 위해 미소경도를 측정하였다. 박리특성의 고찰은 대기중에서의 자발적 박리가 일어나 90%이상의 박리가 진행된 시점까지의 시간을 측정하였고, 증착직후 박막의 잔류응력 변화와 연관하여 고찰해 보았다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.5
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• pp.935-943
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• 1988

The forming limit diagram is assessed as a means of estimating the forming characteristics of sheet metal and is usually determined experimentally. The strain rates used in the determination are likely to be low. However, often in practice, the strain rates are much higher, so if forming limit diagram is determined at low rates, it may not be appropriate. This paper reconsiders the forming limit diagram for mild steel and aluminum sheet up to variation in strain rate from 10$^{-2}$ sec to 20/sec where its forming has been carried out under oil pressure using a hydraulic bulge test with circular and elliptical dies. To obtain higher strain rate, an impact bulge test had been employed with the same die sets as those used for a hydraulic bulge test. The results obtained are as follows: (1) As the strain rate increases, the fracture pressure increases and the polar height at fracture decreases. (2) Experiment has shown that, in the positive quadrant of the forming limit diagram, the diagram is lowered with increasing strain rate and the effect of strain rate changes according to strain paths and materials..

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.160-166
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• 2013

Purpose: The purpose of this study was to compare the fracture strength of traditional metal-ceramic crowns and full zirconia crowns according to the occlusal thickness. Materials and methods: A mandibular first molar resin tooth was prepared with 1.5 mm occlusal reduction, 1.0 mm rounded shoulder margin and $6^{\circ}$ taperness in the axial wall. Duplicating the resin tooth, 64 metal dies were fabricated. 48 full zirconia crowns were fabricated using Prettau zirconia blanks by ZIRKONZAHN CAD/CAM and classified into six groups according to the occlusal thickness (0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm). 16 metal-ceramic crowns were fabricated and classified into two groups according to the occlusal porcelain thickness (1.0 mm, 1.5 mm). All crowns were cemented on each metal die and mounted in a universal testing machine. The load was directed at the functional cusp of each specimen until catastrophic failure occurred. One-way ANOVA, Tukey multiple comparison test (${\alpha}=.05$) and t-test (${\alpha}=.05$) were used. Results: The results were as follows. 1. The test 1 group (646.48 N) showed the lowest fracture strength (P<.05), and the value of the test 2.3.4.5 groups (866.40 N, 978.82 N, 1196.82 N, 1222.41 N) increased as thickness increased, but no significant difference were found with the groups (P>.05). The value of test 6 group (1781.24 N) was significantly higher than those of the other groups (P<.05). 2. There were no significant differences of the fracture strength of metal ceramic crowns according to occlusal porcelain thickness 1.0 mm (2515.71 N) and 1.5 mm (3473.31 N) (P<.05). Conclusion: Full zirconia crown needs to be 1.0 mm or over in occlusal thickness for the posterior area to have higher fracture strength than maximum bite force.

• The Journal of Korean Academy of Prosthodontics
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• v.48 no.1
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• pp.1-7
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• 2010

Purpose: The purpose of this study was to evaluate the fit of zirconia core using MAD/MAM system comparing to that of conventional metal-ceramic and CAD/CAM system. Materials and methods: Duplicating the prepared resin tooth, 50 improved stone dies were fabricated. These dies are classified as a group of 5 to create the core. The groups were composed of metal-ceramic, $Cercon^{(R)}$, $Ceramill^{(R)}$, $Rainbow^{TM}$, and $Zirkonzhan^{(R)}$. Each core was cemented to stone die, and then, absolute marginal discrepancy was measured with microscope at a magnification of ${\times}50$. Statistical analysis was done with one-way ANOVA test and Tukey's HSD test. Results: The mean absolute marginal discrepancy for metal-ceramic was $51.97{\pm}23.38{\mu}m$, for $Cercon^{(R)}$ was $62.16{\pm}25.88{\mu}m$, for $Ceramill^{(R)}$ was $67.64{\pm}40.38{\mu}m$, for $Rainbow^{TM}$ was $125.07{\pm}42.19{\mu}m$, and for $Zirkonzhan^{(R)}$ was $105{\pm}44.61{\mu}m$. Conclusion: 1. Fit of margin was identified as in the order of metal-ceramic, $Cercon^{(R)}$, $Ceramill^{(R)}$, $Zirkonzhan^{(R)}$, and $Rainbow^{TM}$. 2. Absolute marginal discrepancy of the zirconia core that designed by MAD/MAM system had significant differences in order of $Ceramill^{(R)}$, $Zirkonzhan^{(R)}$, and $Rainbow^{TM}$. 3. The mean absolute marginal discrepancy between $Cercon^{(R)}$ and $Ceramill^{(R)}$ did not show significant differences.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.310-310
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• 2014

ZnO박막은 넓은 밴드갭 (3.37 eV), 높은 여기 결합 에너지 (60 meV)를 가지는 육방정계 우르자이트(hexagonal wurtzite) 결정구조를 가지는 II-VI족 화합물 반도체로, 가시광선 영역에서의 높은 광학적 투과도 특성과 자외선 파장에서 발광이 가능한 장점을 가진다. 최근, ZnO박막 성장 기술이 상당히 발전하였지만, 아직까지도 p-형 ZnO박막 성장 기술은 충분히 발전하지 못하여 ZnO의 동종접합 LED는 아직 상용화되지 않고 있는 실정이다. 따라서, 많은 연구 그룹에서 p-GaN, p-SiC, p-diamond, p-Si 등과 같은 p-type 물질 위에 n-type ZnO를 성장시킨 이종접합 다이오드가 연구되고 있다. 특히, p-GaN의 경우 ZnO와의 격자 불일치 정도가 1.8 % 정도로 작다는 장점이 있어 많은 연구가 이루어 지고 있다. 일반적으로 c-축을 기반으로 한 극성ZnO 발광다이오드에서는 자발 분극과 압전 분극 현상에 의해 밴드 휨 현상이 발생하고, 이로 인해 전자와 정공의 공간적 분리가 발생하게 되어 발광 재결합 효율이 제한되고 있다는 문제가 발생한다. 따라서, 본 연구에서는 극성 (0001) 및 비극성 (10-10) n-ZnO/p-GaN 발광다이오드의 성장 및 발광 소자의 전기 및 광학적 특성에 대한 비교 연구를 진행하였다. 금속유기 화학증착법을 이용하여 c-면과 m-면 위에 각각 극성 (0001) 및 반극성 (11-22) GaN박막을 $2.0{\mu}m$ 성장시킨 후 Mg 도핑을 한 p-GaN을 $0.4{\mu}m$ 성장시켜 각각 극성 (0001) 및 반극성 (11-22) p-GaN템플릿을 준비하였다. 이후, N2분위기 $700^{\circ}C$에서 3분동안 열처리를 통하여 Mg 도펀트를 활성화시킨 후 원자층 증착법을 이용하여 동시에 극성 및 반극성 p-GaN의 위에 n-ZnO를 $0.11{\mu}m$ 성장시켜 이종접합구조의 발광소자를 형성하였다. 이때, 극성 (0001) p-GaN 위에는 극성의 n-ZnO 박막이 성장되는 반면, 반극성 (11-22) p-GaN 위에는 비극성 (10-10) n-ZnO 박막이 성장됨을 HR-XRD로 확인하였다. 극성 (0001) n-ZnO/p-GaN이종접합 발광다이오드의 전계 발광 스펙트럼에서는 430 nm 와 550 nm의 두 피크가 동시에 관찰되었다. 430 nm 대역의 파장은 p-GaN의 깊은 준위에서 발광하는 것으로 판단되며, 550 nm 피크 영역은 ZnO의 깊은 준위에서 발광되는 것으로 판단된다. 특히, 10 mA 이하의 저전류 주입시 550 nm의 피크는 430 nm 영역보다 더 큰 발광세기를 나타내고 있다. 하지만, 10 mA 이상의 전류주입 하에서는 550 nm의 영역보다 430 nm의 발광세기가 더욱 증가하는 것을 확인할 수 있었다. 이것은 ZnO의 밴드갭이 3.37 eV로 GaN의 밴드갭인 3.4 eV다 작기 때문에 우선적으로 ZnO의 깊은 준위에서 발광하는 550 nm가 더욱 우세하지만, 지속적으로 전류주입 증가에 따른 캐리어 증가시 n-ZnO에서 p-GaN로 전자가 넘어가며 p-GaN의 깊은 준위인 430 nm에서의 피크가 우세해지는 것으로 판단된다. 반면에, 비극성 (10-10) n-ZnO/반극성 (11-22) p-GaN 구조의 이종접합 발광다이오드로 전계 발광 스펙트럼에서는 극성 (0001) n-ZnO/p-GaN에 비하여 매우 낮은 전계 발광 세기를 나타내고 있다. 이는, 극성 n-ZnO/p-GaN에 비하여 비극성 n-ZnO/반극성 p-GaN의 결정성이 상대적으로 낮기 때문으로 판단된다. 또한, 20 mA 영역에서도 510 nm의 깊은 준위와 430 nm의 발광이 관찰되었다. 동일한 20 mA하에서 두 피크의 발광세기를 비교하면 430 nm의 영역은 극성 n-ZnO/p-GaN에 비하여 매우 낮은 값을 나타내고 있다. 이는 반극성 (11-22) p-GaN의 경우 극성 (0001) p-GaN에 비하여 우수한 p-형 특성에 기인한 것으로 판단된다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1281-1286
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• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.219-232
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• 2013

This paper presents a microstrip antenna which recovers its resonant frequency and impedance shifted automatically by the approach of other objects such as hands. This can be used for telemetry sensor applications in the ultrahigh frequency(UHF) industrial, scientific, and medical(ISM) band. It is the key element that an frequency-reconfigurable antenna could be electrically controlled. This antenna is miniaturized by loading the folded plates at both radiating edges, and varactor diodes are installed between the radiating edges and the ground plane to control the resonant frequency by adjusting the DC bias asymmetrically. Using this voltage-controlled antenna and the micro controller peripheral circuits of reading the returned level, the antenna is designed and fabricated which recovers its resonant frequency and impedance automatically. Designed frequency auto recovering antenna is conformed to be recovered within a few seconds when the resonant frequency and impedance are shifted by the approach of other objects such as hand, metal plate, dielectric and so on.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.138-143
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• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.