• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.69-75
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• 2005

In order to improve the reliability of high voltage rotating machines and mold transformers, it is necessary to understand the breakdown mechanism and life assessment of the high voltage winding parts. Especially the on-line PD test provides the ability to monitor effects, such as slot discharge, internal discharge, and end-winding discharge without interrupting the electrical machines, this method has been proven the major testing technology. Capacitive couplers have been the most widely used sensors for the on-line partial discharge detection in rotating machines nowadays. This paper deals with the electrical characteristics and long-term reliability of a ceramic coupler(CC), which can be easily mounted into high voltage input terminal part, has been developed and tested to continuously measure PD activity during operating condition. This paper presents electrical characteristics (dielectric loss angle, capacitance, PD inception level, breakdown voltage, and frequency response bandwidth) and long-term life test result of the developed 6.6 kV class on-line ceramic coupling sensor. It was found that this sensor had good electrical characteristics to detect PD activity during the operating condition with its detection frequency band is between several and several tens MHz. Also, the voltage life of the 6.6kV class ceramic coupler was calculated over 60 years.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.13-20
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• 2010

This paper describes a current mode PWM DC-DC converter IC for battery charger and supply power converter for portable electronic devices. The maximum supply voltage of IC is 40[V] and 2.8[V]~330[V] DC input power is converted to higher or programmed DC voltage according to external resistor ratio or wire winding ratio of transformer. The maximum supply output current is 3[A] over and voltage error of output node is within 3[%]. The whole circuit needed current mode PWM DC-DC converter circuit is designed. The package dimensions and number of external parts are minimized in order to get a smaller hardware size. The power consumption is smaller then 1[mW] at stand by period with supply voltage of 3.6[V] and maximum energy conversion efficiency is about 86[%]. This device has been designed in a 0.6[um] double poly, double metal 40[V] CMOS process and whole chip size is 2100*2000 [um2].