• Title/Summary/Keyword: 굽힘 모드

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Flexural Strength Evaluation of Steel Plate-Concrete Composite Beam using Bolted (절곡 강판을 볼트로 체결한 강판-콘크리트 합성보의 휨강도 평가)

  • Han, Myoung-Hwan;Choi, Byong-Jeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.6
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    • pp.126-136
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    • 2018
  • A steel-plate concrete composite beam is composed of a steel plate, concrete and shear connector to combine inhomogeneous two materials. The steel plate is assembled by welding an existing composite beam. In this study, new steel-plate concrete composite beam, called a SPC Beam, was developed to reduce the shear connector and improve the workability. The SPC Beam was composed of folding steel plates and concrete, without a shear connector. The folding steel plate was assembled using high strength bolt instead of welding. To improve the workability in field construction, a hat-shaped Cap was attached to the junction with a slab. Monotonic load testing under two points was conducted under displacement control mode. The flexural strength of the specimen for positive moment and negative moment was calculated using the plastic stress distribution method. The test results showed that the flexural strength of the new SPC Beam had 80% of the strength of a complete composite beam. In addition, increasing the composite ratio was possible through clearance controls of the cap. In this study, the performance of the SPC Beam was verified through additional experiments and analyses with the cross-sectional shape and cap as variables, because the representative shape in the positive negative moment region is targeted.

Structural Analysis of the Dual Thickness Laser Welded Frame (이종두께 레이저 용접 프레임의 구조해석)

  • 이영신;윤충섭;오재문
    • Computational Structural Engineering
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    • v.10 no.4
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    • pp.165-175
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    • 1997
  • In this paper, the stress, buckling and vibration analyses have been performed for several case with the spot weld stiffened rear side frame, the unstiffened rear side frame and the dual thickness laser weld rear side frame. For stress and vibration analyses, the clamped boundary condition with spring supports are used. But for the buckling analyses, the both ends simply supported boundary conditions are used. For the nummerical analyses, ANSYS 5.0 code is adopted. Maximum stress of the spot weld stiffened rear side frame occurs in the main frame and is 80.9 MPa. Maximum strain is 501 .mu.. The maximum stress of the dual thickness laser weld rear side frame of 1.8mm thickness structure is equal with the stress of spot weld stiffened frame. The weight of dual thickness laser weld frame can be reduced about 17.2%. For the stiffened spot weld rear side frame with both ends simply supported boundary conditon, the bucking load is 52.54 kN. When the thickness of the dual thickness laser weld rear side frame become 1.9mm thickness structure, the buckling load of the stiffenerd rear side frame is equal to that of dual thickness laser weld frame. The reduction of the structure weight is about 5%. The fundamental natural frequency of the stiffened spot weld rear side frame for bending mode is 163.6 Hz and that of the dual thickness laser weld rear side frame is 179.8 Hz.

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Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals (탄화규소 단결정 성장을 위한 종자결정모듈의 탄화규소-흑연 간 접합계면의 기계적 특성 평가)

  • Kang, June-Hyuk;Kim, Yong-Hyeon;Shin, Yun-Ji;Bae, Si-Young;Jang, Yeon-Suk;Lee, Won-Jae;Jeong, Seong-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.5
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    • pp.212-217
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    • 2022
  • Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

Effect of Ta/Cu Film Stack Structures on the Interfacial Adhesion Energy for Advanced Interconnects (미세 배선 적용을 위한 Ta/Cu 적층 구조에 따른 계면접착에너지 평가 및 분석)

  • Son, Kirak;Kim, Sungtae;Kim, Cheol;Kim, Gahui;Joo, Young-Chang;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.39-46
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    • 2021
  • The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.