• Journal of the Korean institute of surface engineering
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• v.44 no.3
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• pp.117-123
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• 2011

We investigated the spectroscopic and electrochemical properties of the citrate-based CuNi solution at different solution pH and analyzed various surface properties of CuNi codeposition layer. By combining UV-Visible spectroscopic data with potentiodynamic polarization curves, it could be found that the complexation of $Ni^{2+}$-citrate pair was completed at lower solution pH than $Cu^{2+}$-citrate pair and was affected by the coexistent $Cu^{2+}$ ions, while the complexation between $Cu^{2+}$ ions and citrate was not sensitive to the presence of $Ni^{2+}$ ions. Also, the electron transfer from cathode to $Cu^{2+}$-citrate and$Ni^{2+}$-citrate was hindered by strong complexation between $Cu^{2+}/Ni^{2+}$ ions and citrate and so apparent codeposition current densities were reduced as the solution pH increases. CuNi codeposited layers had a higher Cu content when they were prepared at high pH solution due to the suppression of Ni deposition, and when codeposition was executed in an agitated condition due to the acceleration of mass transfer of $Cu^{2+}$ ions in the solution. Actually, solution pH had little effect on the surface morphology and deposits orientation, but greatly influenced the corrosion resistance in 3.5% NaCl solution by modifying the chemical composition of CuNi layers and so pH 3 was expected as the most suitable solution pH in the viewpoint of corrosion coatings.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.33-42
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• 2011

In this study, we investigated the natural convection on the outer surface of a vertical pipe by performing mass transfer experiments using fluids with high Pr number using the concept of analogy between heat and mass transfer. A cupric acid-copper sulfate electroplating system was adopted as the mass transfer system. Tests were performed for $Ra_H$ numbers from $1.4{\times}10^9$ to $4{\times}10^{13}$, Pr numbers from 2,094 to 4,173, and diameters from 0.005 m to 0.035 m. The test results for laminar flow conditions were in good agreement with the correlations reported by King, Jakob and Linke, McAdam, and Bottemanne, and those for turbulent conditions with the correlations presented by Fouad for a vertical plate and also proved the dependence on Pr numbers. The obtained correlations were $Nu_H=0.55Ra^{0.25}_H$ for laminar and $Nu_H=0.12Ra^{0.28}_HPr^{0.1}$ for turbulent. The transition between laminar and turbulent occurs at $Ra_H$ of about $10^{12}$.