• 한국표면공학회지
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• 제44권3호
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• pp.117-123
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• 2011

We investigated the spectroscopic and electrochemical properties of the citrate-based CuNi solution at different solution pH and analyzed various surface properties of CuNi codeposition layer. By combining UV-Visible spectroscopic data with potentiodynamic polarization curves, it could be found that the complexation of $Ni^{2+}$-citrate pair was completed at lower solution pH than $Cu^{2+}$-citrate pair and was affected by the coexistent $Cu^{2+}$ ions, while the complexation between $Cu^{2+}$ ions and citrate was not sensitive to the presence of $Ni^{2+}$ ions. Also, the electron transfer from cathode to $Cu^{2+}$-citrate and$Ni^{2+}$-citrate was hindered by strong complexation between $Cu^{2+}/Ni^{2+}$ ions and citrate and so apparent codeposition current densities were reduced as the solution pH increases. CuNi codeposited layers had a higher Cu content when they were prepared at high pH solution due to the suppression of Ni deposition, and when codeposition was executed in an agitated condition due to the acceleration of mass transfer of $Cu^{2+}$ ions in the solution. Actually, solution pH had little effect on the surface morphology and deposits orientation, but greatly influenced the corrosion resistance in 3.5% NaCl solution by modifying the chemical composition of CuNi layers and so pH 3 was expected as the most suitable solution pH in the viewpoint of corrosion coatings.

• 마이크로전자및패키징학회지
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• 제23권3호
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• pp.63-67
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• 2016

본 논문에서는 폴리머 기반의 유연 기판 위 적층 된 다양한 필름의 굽힘 탄성계수의 간접 측정법을 소개한다. 패키징 기판의 다양한 적층 재료들의 탄성계수는 기계적으로 신뢰성 있는 전자기기 개발에 결정적이지만, 기판과 매우 견고히 접합하고 있는 적층 필름을 온전히 떼어 내어 자유지지형(free-standing) 시편을 만들기 어렵기 때문에 그 측정이 쉽지 않다. 이를 해결하기 위해 본 연구에서는 필름-기판의 복합체 시편에 대한 3점 굽힘을 진행하였고 시편 단면에 면적 변환법(area transformation rule)을 적용한 응력 해석을 수행하였다. 탄성계수를 알고 있는 기판에 대하여, 굽힘 시험으로 얻은 다층 시편의 강성으로부터 필름과 기판의 탄성계수 비를 계산하였으며, 전기 도금 구리 시편을 이용하여 양면 적층, 단면 적층의 두 가지 해석 모델이 실험 평가되었다. 또한 주요 절연체 적층 재료인 prepreg (PPG)와 dry film solder resist (DF SR)의 굽힘 탄성계수가 양면 적층 시편 형태로 측정 되었다. 결과로써 구리 110.3 GPa, PPG 22.3 GPa, DF SR 5.0 GPa이 낮은 측정 편차로 측정 됨으로써 본 측정법의 정밀도와 범용성을 검증하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 대한기계학회논문집B
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• 제35권1호
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• pp.33-42
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• 2011

유사성 원리를 이용하여 매우 높은 Pr 수의 유체를 사용하여 수직 원형관 외부의 자연대류 열전달 현상을 실험적으로 연구하였다. 황산-황산구리 수용액의 전기도금계를 물질전달계로 채택하였으며, 실험은 직경 0.005m~0.035m의 음극을 사용하여 Pr 수 2,094~4,173 그리고 $Ra_H$ 수 $1.4{\times}10^9{\sim}4{\times}10^{13}$에서 열전달계수를 측정하였다. 층류에서 실험한 결과는 King, Jakob와 Linke, McAdams, Bottemanne의 수직 원형관 자연대류의 열전달 상관식에 일치하였고 난류에서는 수직평판 난류 자연대류 상관식인 Fouad의 상관식과 일치하였고 Pr 수에 대한 의존성이 나타났다. 실험을 통하여 도출한 층류 상관식은 $Nu_H=0.55Ra^{0.25}_H$,�㉢�류 상관식은 $Nu_H=0.12Ra^{0.28}_HPr^{0.1}$였다. 층류와 난류사이의 천이는 $Ra_H$ 수 약 $10^{12}$에서 발생하였다.