• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.69-76
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• 2014

In this study, we developed an ultra-thin flexible printed circuit board(FPCB) using the sputtered flexible copper clad laminate. In order to enhance the adhesion between copper and polyimide substrate, a NiMoNb addition layer was applied. The mechanical durability and flexibility of the ultra-thin FPCB were characterized by stretching, twisting, bending fatigue test, and peel test. The stretching test reveals that the ultra-thin FPCB can be stretched up to 7% without failure. The twisting test shows that the ultra-thin FPCB can withstand an angle of up to $120^{\circ}$. In addition, the bending fatigue test shows that the FPCB can withstand 10,000 bending cycles. Numerical analysis of the stress and strain during stretching indicates the strain and the maximum von Mises stress of the ultra-thin FPCB are comparable to those of the conventional FPCB. Even though the ultra-thin FPCB shows slightly lower durability than the conventional FPCB, the ultra-thin FPCB has enough durability and robustness to apply in industry.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.11-16
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• 2022

Metal-organic frameworks (MOFs) are porous materials with nano-sized pores. The degree of gas adsorption and pore size can be controlled according to types of metal ions and organic ligands. Many studies have been conducted on MOFs in the fields of gas storage and separation, and gas sensors. For rapid and quantitative gas adsorption/desorption analyses, it is necessary to form various MOF structures in uniform films on a sensor surface. In this review, some of representative direct methods for uniformly synthesizing MOFs such as MIL-53 (Al), ZIF-8, and Cu-BDC from anodized aluminum oxide, zinc oxide nanorods, and copper thin films, respectively on the surface of a microresonator are highlighted. In addition, the operation principle of quartz crystal microbalance and microcantilever, which are representative microresonators, and the interpretation of signals that change when gas is adsorbed to MOFs are covered. This is intended to enhance the understanding of gas adsorption/desorption analysis of MOFs using microresonators.