• Journal of Advanced Navigation Technology
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• v.12 no.6
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• pp.653-658
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• 2008

The automotive environment is particularly demanding on connector performance, and is characterized by large temperature changes, high humidity and corrosive atmospheres. Fretting is a contact damage process that occurs between two contact surfaces. Fretting corrosion refers to corrosion damage at the asperities of contact surfaces. This damage is induced under load and in the presence of repeated relative surface motion, as induced for example by vibration. This paper critically reviews the works published previously on fretting corrosion of electrical connectors. Various experimental approaches such as testing machines, material selection, testing environments, acceleration testing techniques and preventing methods are addressed. Future research prospects arc suggested.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.9-11
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• 2001

차세대 고속 DRAM기술에 사용될 금속인 Cu의 확산 방지막(diffusion harrier) 물질로는 Ta 또는 W 같은 Refractory metal 이 융점(melting point)이 높고 저항값이 낮아 많이 연구 보고되고 있으나, 본 논문에서는 초고주파 소자에서 Au의 확산 방지 막으로 많이 사용되고 있으며. 선택적 증착이 용이한 Pt과 Ni를 MOS 소자의 Cu 확산 방지 막으로 적용하며 어닐링한 후 소자의 게이트 산화막 누설전류($I_{leak}$), 그리고. Si/$SiO_2$ 계면의 trap density 등의 변이를 측정하여 Cu가 소자의 특성 열화에 미치는 영향을 연구하였다. 실험 결과 Pt/Ti($200{\AA}/100{\AA}$)를 적용한 경우 소자 측성 열화가 가장 적었으며. 이는 Copper의 확산 방지막으로 Pt/Ti를 사용하여 전기적 특성 및 계면 특성을 개선시킬 수 있음을 보여 주었다. 이는 SIMS Profile을 통해서도 확인하였다.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.155-163
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• 2011

Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.

• Journal of Conservation Science
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• v.28 no.4
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• pp.403-410
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• 2012

The brine treatment applied during the fabrication of forged high tin bronze objects is considered effective at the removal of surface oxide layers developed at elevated temperatures. There is not much information, however, available for the understanding of its exact effect and purpose. This work performed laboratory experiments to characterize the effect brine treatments produce on the surface of bronze objects during fabrication. Specimens were first made in the bronze shop of the Yongin folk village under varying conditions of brine treatments, and the results obtained were then used in the following laboratory experiments where the effect of brine treatments were investigated in terms of brine concentrations, alloy compositions and thermo-mechanical treatments. The results show that oxide layers generated at high temperature are easily removed by the brine treatment. It was found that the element, chlorine, played a key role in the removal of such oxide layers as opposed to the other constituent of the brine, sodium, makes no notable contribution. In bronze alloys containing 22% tin, this brine effect is obtained regardless of the application of forging as long as the brine concentration is over 0.5% based on weight. In alloys containing lead, however, no brine effect is observed due to the molten lead that emerges from inside the hot bronze specimen and forms a thin layer on its surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.407-407
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• 2012

화학기상증착법(CVD; Chemical Vapor deposition)으로 h-BN을 증착하여 성장 시간에 따른 표면의 특성 및 결정성을 연구하였다. 암모니아 보레인(BH3NH3)을 보론 나이트라이드(Boron Nitride) 박막의 전구물질로 이용하였으며, $70{\sim}120^{\circ}C$로 열을 가하여 열분해하였다. $25{\mu}m$ 두께의 구리 기판을 챔버에 넣어서 Low pressure (~25 mTorr) 상태가 되도록 한다. 25 mTorr 이하의 압력에서 수소 가스 (0.2~1sccm)를 넣고 $20^{\circ}C$/min로 가열한 후 약 한 시간 후에 $990{\sim}1,000^{\circ}C$가 된다. 그 후 Cu foil의 표면을 부드럽게 하고, 산화막을 제거하기 위해 $990^{\circ}C$에서 40 분간 열처리(annealing)한다. 그 후 암모니아 보레인에서 분해된 보라진 가스(borazine; B3H6N3)로 h-BN을 합성한다. 성장 시간이 길수록 더 많은 부분이 보론 나이트라이드에 의해 덮인다는 것을 관찰하였고, 성장 시 주입하는 수소의 양(0.2~5 sccm)과 알곤(0~15 sccm)의 혼합 비율에 따라 보론 나이트라이드의 domain size가 변화함을 알 수 있었다. 그 각각의 차이를 주사 전자현미경(SEM; Scanning Electron Microscopy)을 통해 확인하고, 결정성을 라만 분광(Raman spectroscopy), 광전자 분광(XPS; X-ray photoelectron spectroscopy)으로 비교 분석하였다.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2000-2002
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• 2002

신장병의 조기진단을 위해서 체내의 요소 농도의 정확한 측정은 매우 중요하며, 이러한 이유에서 많은 연구자들은 보다 빠르고 정확한 체내의 요소농도 측정을 위한 바이오센서를 개발 중이다. 본 논문은 반도체 공정을 이용하여 산화막(4.000${\AA}$)이 성장된 p-형 실리콘 웨이퍼를 사용하였다. RF sputter를 사용하여 티타늄과 백금을 증착한 백금 박막전극을 제작하였다. 그 위에 전도성 고분자인 Polypyrrole(PPy)과 전도도를 증가시키기 위하여 구리를 도펀트로 사용 scan rate 40mV/S $0.8{\sim}-0.8V$ 전위영역에서 산화적 전기 중합법 (anodical electropolymerization)을 이용하여 전극을 형성하였다. 요소를 2개의 암모늄 이온과 1개의 탄산 이온으로의 가수분해반응을 촉매하는 효소로써 유레이즈(urease)를 전기적 흡착방법을 이용하여 고정화하고 이에 요소농도의 변화에 대하여 시간대 전류법 (chronoamperometry:CA)을 사용하여 감도를 측정하였다. 최적화된 조건하에서 요소농도에 비례하여 Cu-doped PPy electrode로부터 얻어진 확산한계전류는 $4.5{\mu}A$/decade의 기울기를 나타내었다. 전극의 표면은 SEM(Scanning Electron Microscopy)과 EDX(Energy Dispersive X-Ray Spectrometer)를 이용하여 분석 하였다.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.

• Nuclear Engineering and Technology
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• v.21 no.2
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• pp.111-122
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• 1989

With the Zircaloy-4 tube oxidized in high temperature (1323 K) steam for 5, 10, 30 and 60 minutes, the expanding copper mandrel test was carried out over a temperature range of 673-l173k at $\varepsilon\;=\;3.0\times10^5S\;^1$. The oxidation parameters $(K_i)$ in the present study were linearly proportional to square root of time $(Ki= \delta_{kit})$ and their rate constants ($\delta_{ki}$) are 0.281, 2.82, and 2.313 for weight gain and thickness of Zr02 and $\alpha$(0) layer, respectively. Activation energy for high temperature (873-1073k) plastic deformation of Zircaloy-4 increases from 251 KJ/mol to 323 KJ/mol with increase in oxidation time from 5 minutes to 60 minutes due to the high strengthened Zr02. With the oxide layer thickness [K ; expressed in "Equivalent Cladding Reacted" (ECR,%)] and the yield stress obtained from the mandrel test, an empirical relation was derived as ($\sigma/C)^n=K^mexp$ (Q/RT) with n=6.9, m=5.7, C=0.155, 0.138, 0.051, and 0.046 MPa for Q=251, 258, 316, 323 KJ/mol, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.409-409
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• 2013

최근, 집적 소자의 미세화에 따라 늘어난 배선 신호 지연 및 상호 간섭, 그리고 소비 전력의 증가는 초고집적 소자 성능 개선에 한계를 가져온다. 이에 따라 기존의 알루미늄(Al)/실리콘 절연 산화막은 구리(Cu)/저유전율 박막(low-k)으로 대체되고 있고, 이는 소자 성능 개선에 큰 영향을 미친다. 그러나 Cu는 Si과 low-k 내부로 확산이 빠르게 일어나 소자의 비저항을 높이고, 누설 전류를 일으키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 이러한 Cu의 확산을 막기 위하여 Ta, TaN 등과 같은 확산방지막에 대한 연구가 활발히 진행되어 왔으나, 배선 공정의 집적화와 low-k 대체에 따른 공정 및 신뢰성 문제로 인해 새로운 확산방지막의 개발이 필요하게 되었다. 이를 위해, 본 연구에서는 Cu-V 합금을 사용하여 low-k 기판 위에 확산방지막을 자가 형성 시키는 공정에 대한 연구를 진행하였다. 다양한 low-k 기판에서 열처리조건에 따른 Cu-V 합금의 특성을 확인하기 위해 4-point probe를 통한 비저항 평가와 XRD (X-ray diffraction) 분석이 이뤄졌다. 또한, TEM (transmission electron microscope)을 이용하여 $300^{\circ}C$에서 1 시간 동안 열처리를 거쳐 자가형성된 V-based interlayer가 low-k와 Cu의 계면에서 균일하게 형성된 것을 확인하였다. 형성된 V-based interlayer의 barrier 특성을 평가하고자 Cu-V합금/low-k/Si 구조와 Cu/low-k/Si 구조의 leakage current를 비교 분석하였다. Cu/low-k/Si 구조는 비교적 낮은 온도에서 leakage current가 급격히 증가하는 양상을 보였으나, Cu-V 합금/low-k/Si 구조는 $550^{\circ}C$의 thermal stress 에서도 leakage current의 변화가 거의 없었다. 이러한 결과를 바탕으로 열처리를 통해 자가형성된 V-based interlayer의 Cu/low-k 간 확산방지막으로서 가능성을 검증하였다.

• Journal of Conservation Science
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• v.31 no.3
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• pp.287-298
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• 2015

The formaldehyde is damage to the metal are known universally. However, the quantification of the damage level and degree of damage is not clear. This study was conducted to test the following steps using a gas corrosion tester, and then evaluated by the optical, chemical and physical measurement. First, it was confirmed the damage level of the metal specimen(silver, copper, iron, lead, brass) by the formaldehyde(0.5, 1, 10, 100, 500ppm). Second, weighted damage to the metal specimens were tested according to the temperature and humidity conditions under damage levels. Third, the damage of accelerated degradation metal specimens were examined under damage levles. As a result, at 500ppm / day, the optical, chemical and physical damage of lead have been identified, the optical damage of all metals are was observed. The optical damage of some specimens were weighted in $25^{\circ}C-50%$, $30^{\circ}C-50%$. Chemical damage to the lead specimen is 2.8 times, 1.3 times were weighted in $30^{\circ}C-80%$, $25^{\circ}C-80%$. Referring to formate ion concentration of the accelerated degradation metal, corrosion products of iron and brass were actived the reaction of the formaldehyde gas, oxide film of lead was blocked the reaction of formaldehyde gas.