• Photonics industry news
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• s.7
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• pp.10-13
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• 2001

한국 전자통신연구원(ETRI)은 지난 1976년 창립 이래 25년간 전전자식교환기(TDX), 초고집적 반도체(DRAM), 슈퍼미니컴퓨터(TiCOM), 디지털이동통신시스템(CDMA)등 경쟁력 있는 정보통신 기술개발을 성공적으로 수행하여 우리나라가 정보통신 강국으로 발돋움하는 데 획기적인 기여를 해 온 국내 최대의 종합 정보통신 국책 연구기관이다. 21세기는 지식과 정보가 컴퓨터나 통신기능과 결합해 훨씬 높은 효율로 활용되는 지식기반사회가 될 것이다. 이러한 21세기를 맞이하여 한국전자통신연구원은 세계 최고의 정보통신연구기관이 되기 위하여 ‘세계적인 지적 재산권 다수 보유’, ‘세계적인 우수 인력 확보’, ‘세계 최고의 1인당 기술료 실현’의 발전비전을 수립, 이의 실현을 위해 최선의 노력을 기울이고 있다. 또한 우리나라 산업경쟁력 향상뿐 만 아니라 인류복지를 지향하는 정보통신기술의 선도자이자 Global Leader가 되기 위하여 일신경영 ∙ 품질경영 ∙ 지식경영을 바탕으로 하여 경영혁신을 중점적으로 추진해 나가고 있다. 연구원은 21세기 정보통신 산업구조와 기술동향을 예측, 시대의 요구에 부응하는 새로운 지식과 기술을 창조하여 새 천년에는 세계를 선도하는 전자∙정보통신분야 종합연구기관으로 거듭 태어나도록 최선을 다해 나가고 있다.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.234-239
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• 2006

We measured the microwave permeability in the frequency range of 100 MHz$\sim$9 GHz in the exchange biased CoFe/MnIr films. The results were analyzed based on the Landau-Lifshitz-Gilbert theory. The initial permeability and ferromagnetic resonance frequency was tuned by controlling the CoFe thickness and unidirectional anisotropy. The tunable range of ferromagnetic resonance frequency was up to 20 GHz in the thin CoFe layer of 1.5 nm. The CoFe/MnIr films showed the high permeability and low loss properties in the microwave frequency range. Thus, this material could be applied to the microwave devices.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.357-361
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• 1998

For CoZr/Ag/CoCr trilayered films deposited by DC and FR magnetron sputtering method, ferromagentic resonance experiments have been used to investigate the dependence of the exchange coupling between CoZr and CoCr layers separated by Ag layer on the thickness of the Ag layer. The coupling strength K increases with increasing Ag thickness up to 10 $\AA$ with a maximum value of 748 Oe, but oscillates with increasing Ag thickness in the range from 20 to 100 $\AA$. The coupling strength is positive for all samples. Hence, it seems that the exchange coupling between CoZr and CoCr layers separated by Ag layer is ferromagnetic.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.127-130
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• 2004

Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in (Pd/Co)$_{N}$FeMn multilayer deposited by do magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of (Pd(0.8nm)/Co(0.8nm)$_{5}$FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21nm, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15nm. As the annealing temperature increases to 24$0^{\circ}C$, the E$_{ex}$ increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 33$0^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.31 no.1
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• pp.14-24
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• 1987

The CNDO/2 method has been used to calculate the electronic structure of the zeolites and silicas, and to investigate the interaction of CO molecules with the OH groups or the exchanged cation in the zeolites. The interaction energies of CO molecules with OH groups in silica were ca. 12kcal/mol, the bond distance, R(O-H${\cdots}$C) was 2.6${\AA}$. The strength of bond between CO molecules and various types of cations in the zeolites was in the following order: $H^+ < Na^+ < Li^+$, i.e., this increased with increasing electrostatic field of cations. The bond orders of CO molecules interacting with the OH groups or the cations increased but for the OH-OC type interaction. The theoretical decationization energies of exchanged cations in the zeolites decreased in the order: $H^+ > Li^+ > Na^+$. And these energies depended on the amount of charge density transfered from the skeleton to the cations in order to compensate its negative charge.

• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.223-238
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• 1974

CNDO/2 MO theoretical studies and kinetic studies of halide exchange reactions for alkylchloroformates have been carried out in order to investigate structure-reactivity relationship of alkylchloroformates. From the result of energetics, it was concluded that the most stable configuration of alkylchloroformate is that in which alkyl group and chlorine are trans to each other, and that the hindered rotation about the bond between the carbonyl carbon and alkoxy-oxygen bond is attributed to the ${\pi}-$electron delocalization. It has been found that the large charge separation is due to -M effect of carbonyl and alkoxy oxygens and-I effect of chlorine. The order of rates in solvents studied was $(CH_3)_2 > CO > CH_3CN{\gg}MeOH.$$I^->Br^->Cl^-$ in protic solvent, and of Cl^->Br^- >I^-$ in dipolar aprotic solvents. Alkyl group contribution has the decreasing order of $CH_3-> C_2H-{\gg}i-C_3H_7-.$ The solvent effect has been interpreted on the basis of initial and final state contribution. A transition state model has been suggested, and it has been proposed that the most favorable mechanism is the addition-elimination. From the results of activation parameters and electronic properties, an energy profile has been proposed. Structural factors determining reactivities of alkylchloroformates have been shown to be charge, energy level of ${\alpha}^*LUMO$ to C-Cl bond and ${\alpha}^{\ast} $antibonding strength with respect to C-Cl bond in this MO. Charge and polarizability of nucleophile, and the interaction of these effects with solvent structures are also found to be important.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.41-44
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• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Korean Magnetics Society
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• v.19 no.2
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• pp.52-56
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• 2009

Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.