• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.108-109
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• 2002

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.250-251
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• 2002

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.63-68
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• 1999

In this paper, the correlation between the growth mechanism and the optical property in GaN films grown by low-pressure metalorganic chemical vapor deposition was characterized using room temperature cathodoluminescence spectroscopy. An intense near band-edge emission, 364nm, and deep-level emission, 550nm, were observed. The intensity of 364nm peak was increased with increasing the beam current. Also the peak position of 364nm emission was red-shifted and the intensity of 550nm peak was increased with increasing the accelerating voltage. It shows that the deep-level emission is strongly associated with crystalline defects in the GaN at early stage. The relationship between the microstructure and the deep level emission observed by scanning electron microscope images and cathodoluminescence spectra was carefully analyzed.

• Nuclear Engineering and Technology
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• v.6 no.1
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• pp.9-13
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• 1974

The exciton emission spectra of CdS single crystals excited by electrons were measured at 80$^{\circ}$K as a function o: the wave length. The measured dissociation energy of exciton bound to neutral donor was 2.0 meV, compared to the corresponding theoretical value of 2.4 to 3.2 meV. An exciton bound to neutral donor and a longitudinal optical (LO) phonon may not interact, but a free exciton dissociated from a neutral donor and a LO phonon is expected to interact each other. Therefore the origin of the spectra consisting of interaction term was located at the spectrum consisting of a free exciton dissociated from a neutral donor (I$_2$d). From the analysis of the spectra the LO phonon energy of CdS was found to be 40.5 meV.

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.293-294
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.137-138
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• 2008

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.249-254
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• 2009

In our study, the Hanle spectrum and nonlinear magneto-optic effect (NMOE) signals were observed as a function of magnetic field on $D_1$ line of $^{87}Rb$ atoms contained in a paraffin coated vapor cell. We observed the double structure from the Hanle and the NMOE spectrum in the paraffin coated Rb vapor cell. The narrow spectral width of the narrow resonance signal is approximately 1 kHz and the magnitude is approximately 10 percent of the total spectrum. Also, the NMOE signals corresponding to the Hanle configuration consisted of two different dispersion-like features. At the near zero magnetic field, a sharp slope signal was centered, and its value was 10 mV/${\mu}T$ with laser power was $200{\mu}W$.

• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.503-506
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• 2001

When DC voltages from 5 V up to 90 V are applied to a transmitter chip excited by an ultrafast lacer beam, the terahertz electromagnetic pulses and their spectra are changed. The spectrum shifts to the high frequency range when the high DC voltage is applied to the chip. At that time, the signal-to-noise ratio is increased from 250: 1 to 10,000: 1. The spectrum can expand up to 4 THz by optimal realignment of the THz system. Also, two terahertz electromagnetic pulses are generated from a receiver chip when the laser detection beam is reflected to the back side of the chip.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.393-393
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• 2013

나노입자를 포함하는 합성물은 전자소자와 광전소자의 응용 가능성 때문에 많은 연구가 진행되고 있다. 복합층을 사용한 소자의 전기적 성질에 대한 연구는 많이 진행되었으나, SiC/SiNx 다층 복합층 소자에 대한 광학적 특성에 대한 연구는 상대적으로 미흡하다. 본 연구는 SiC/SiNx 다층 복합층을 사용하여 스퍼터링 방법으로 형성하고 열처리를 사용하여 복합층의 미세구조와 광학적 특성을 조사하였다. SiNx층을 p-형 Si 기판 위에 성장한 후 SiC층을 형성하였다. 3번의 주기적인 성장으로 다층구조를 형성하고, 30분 동안 열처리 하였다. 투과전자현미경상은 SiC/SiNx 복합층에 SiC 나노입자가 형성한 것을 확인하였다. 광류미네센스 스펙트럼 결과는 형성한 SiC/SiNx 복합층을 열처리할 때 SiC층에서 나타나는 주된 피크 위치가 변위되는 것을 보였다. 광류 미네센스 스펙트럼 결과에서 나타난 주된 피크가 열치리에 따라 변화하는 원인을 규명하였다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.3
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• pp.245-250
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• 2010

The procedure for estimating the gas (rotational) temperature of an air discharge in supersonic flows is presented in detail. Since direct measurement of the temperature in a supersonic flow is difficult, a nonintrusive measurement was performed by optical emission spectroscopy based on the emission spectra of nitrogen molecular ions. A detailed explanation, including the equations for emission line intensity, is presented in order to understand the structure of the emission spectra of nitrogen molecular ions. Using the obtained representation for emission spectrum, a synthetic spectrum of the first negative system of $N_2^+$ is obtained, and it is compared with the experimentally measured spectrum. Within a relative error of approximately 6.8% for the overall band spectra, the synthetic and measured spectra agree well. In the case of a 25-mA DC air discharge in a supersonic (Mach 3) flow, the gas temperature profile shows an approximately linear variation and a peak temperature of approximately 350 K.