• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.60-64
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• 2011

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

• Clean Technology
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• v.26 no.4
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• pp.311-320
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• 2020

In this study, the photocatalytic degradation of rhodamine B (RhB), methyl orange (MO) and methylene blue (MB) was carried out under visible light irradiation using CdS and CdZnS/ZnO photocatalysts prepared by a simple precipitation method. This study focused on examining the effect of physicochemical properties of dye and photocatalyst on the reaction pathway of photocatalytic degradation. The prepared photocatalysts were characterized by XRD, UV-vis DRS and XPS. Both the CdS and CdZnS/ZnO photocatalysts exhibit an excellent absorption in the visible light and the UV light regions. It was observed that the photocatalytic degradation of MO proceeds via the same reaction mechanism on both the CdS and CdZnS/ZnO photocatalysts. However, the photocatalytic degradation of RhB and MB was found to proceed through a different reaction pathway on the CdS and CdZnS/ZnO catalysts. It is interesting to note that MB dimer was formed on the CdS catalyst at the beginning of the photocatalytic reaction, while the MB monomer was degraded during the overall photocatalytic reaction on CdZnS/ZnO. The above results may be mainly ascribed to the difference of band edge potential of the conduction band in the CdS and CdZnS/ZnO semiconductors and the adsorption property of dye on the catalysts.

• Journal of Industrial Convergence
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• v.20 no.12
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• pp.79-85
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• 2022

Recently, a smartphone manufactured on a flexible substrate has been released as an electronic device, and research on a stretchable electronic device is in progress. In this paper, a silicon-based stretchable material is made and used as a substrate to implement and evaluate an optical sensor device using oxide semiconductor. To this end, a substrate that stretches well at room temperature was made using a silicone-based solution rubber, and the elongation of 350% of the material was confirmed, and optical properties such as reflectivity, transmittance, and absorbance were measured. Next, since the surface of these materials is hydrophobic, oxygen-based plasma surface treatment was performed to clean the surface and change the surface to hydrophilicity. After depositing an AZO-based oxide film with vacuum equipment, an Ag electrode was formed using a cotton swab or a metal mast to complete the photosensor. The optoelectronic device analyzed the change in current according to the voltage when light was irradiated and when it was not, and the photocurrent caused by light was observed. In addition, the effect of the optical sensor according to the folding was additionally tested using a bending machine. In the future, we plan to intensively study folding (bending) and stretching optical devices by forming stretchable semiconductor materials and electrodes on stretchable substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1302-1307
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• 2006

This study describes the preparation of high-performance photocatalyst and its environmental applications. We prepared visible-light response nano-particle photocatalyst exhibiting the similar photocatalytic activity with $TiO_2$, dispersed $TiO_2$ on $SiO_2$ with an active rutile type titanium oxide prepared at low temperature. The binder and stable photocatalytic $TiO_2$ sol for photocatalytic system were also prepared. Such products were evaluated by UV/Vis spectrometer, X-ray diffraction analysis, SEM, measurement of photocatalytic activities and surface area, mechanical properties of $TiO_2$-coated surfaces. The results obtained can be applied in efficient photocatalytic systems using POF and metal plate for the purification of air.

• Journal of the Korean Society of Radiology
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• v.13 no.5
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• pp.791-799
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• 2019

We evaluated the physical properties that occur to dose enhancement and changes from secondary particle production resulting from the interaction between enhancement material. Geant4 was used to perform a Monte Carlo simulation, and the medical internal radiation dose (MIRD) head phantom were employed. X-rays of 4, 6, 10, 15, 18, and 25 MV were used. Aurum (Au) and gadolinium (Gd) were applied within the tumor volume at 10, 20, and 30 mg/g, and an experiment using soft tissue exclusively was concomitantly performed for comparison. Also, particle fluence and initial kinetic energy of secondary particle of interaction were measured to calculate equivalent doses using the radiation weight factor. The properties of physical interaction by the radiation enhancement material showed the great increased in photoelectric effect as compared to the compton scattering and pair production, occurred with the highest, in aurum and gadolinium it is shown in common. The photonuclear effect frequency increased as the energy increased, thereby increasing secondary particle production, including alpha particles, protons, and neutrons. During dose enhancement using aurum, a maximum 424.25-fold increase in the equivalent dose due to neutrons was observed. This study was Monte Carlo simulation corresponds to the physical process of energy transmission in dose enhancement. Its results may be used as a basis for future in vivo and in vitro experiments aiming to improve effects of dose enhancement.

• Journal of dental hygiene science
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• v.6 no.4
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• pp.303-307
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• 2006

The objective of this study was to evaluate the effects of the topical application of fluoride by iontophoresis on the fluoride concentration in the dental enamel. Eighty-eight healthy teeth were extracted from orthodontic patients and divided into three experimental groups at 0.2 mA and 0.5 mA current and a control group. Each experimental group was further divided into three subgroups according to the application time (1, 3, and 5 min). Five to six teeth were assigned to each subgroup. Inotophoresis was performed using a 2% sodium fluoride solution and each tooth was sliced into a $3{\times}3mm$ specimen on enamel. The fluoride concentration in the enamel was measured using X-ray photoelectron spectroscopy. It was used to estimate the atomic ratio of fluoride on the enamel surface on selected samples. The specimen was observed via scanning electron microscopy as well. This finding was confirmed by the result that the fluoride ratios estimated by x-ray photoelectron spectroscopy was 2.71%, 2.87% and 3.80% after fluoride iontophoresis had been performed using a 2% sodium fluoride solution at 0.5 mA for 1, 3 and 5 min, respectively. In comparison, the fluoride ratio was 0.49% in the control group. As the current became higher and the time lapsed, the formation of irregular particles was strengthened on the enamel surface. Afterwards, the enamel surface was dissolved and new matrix was formed on the enamel. Fluorapatite was observed on the enamel after fluoride iontophoresis was performed at 0.5 mA for 5 min. The fluoride concentration tended to increase with increasing duration of iontophoresis. The study findings indicated that under proper conditions, fluoride iontophoresis has a positive effect in increasing the fluoride concentration in dental enamel.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.137-141
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• 2010

Poly [4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) was synthesized by the Heck coupling reaction between 4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole and 1,4-bis(dodecyloxy)-2,5-divinylbenzene. The maximum absorption and band gap of PPVTBT were 550 nm and 1.74 eV, respectively. The HOMO and LUMO energy level of PPVTBT were -5.24 eV and -3.50 eV, respectively. The photovoltaic device based on the blend of PPVTBT and (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$ (PCBM) (1 : 6 by weight ratio) was fabricated. The efficiency of device was 0.16%. The short circuit current density (Jsc), fill factor (FF) and open-circuit voltage (Voc) of the device was $0.74mA/cm^{2}$, 31% and 0.71 V, respectively, under AM 1.5 G and 1 sun condition ($100mA/cm^{2}$).

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.123-123
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• 2010

3족 질화물계 물질은 발광다이오드와 같은 광전자소자적용에 있어서 매우 우수한물 질이다.일반적으로, GaN 에피 성장에 있어서 저온 중간층을 삽입한 2 단계 성장 방법은 낮은 결함밀도와 균일한 표면을 얻기 위해 도입된 기술이다. 특히 AlN 중간층은 GaN 중간층과 비교하였을 때 결정성뿐만 아니라 높은 온도에서의 열적안정성, GaN 기반의 자외선 검출기서의빛 흡수 감소 등의 장점을 가지고 있다. 또한 패턴 사파이어 기판위 GaN 에피 성장은 측면성장 효과를 통해 결함 밀도 감소와 광 추출 효율을 향상시키는 것으로 알려져 있다.또한 열응력으로 인한 기판의 휨 현상은 박막성장중 기판의 온도 분포를 불균일하게 만드는 원인이 되며 이는 결국 박막 조성 및 결정성의 열화를 유도하게 되고 최종적으로 소자특성을 떨어 뜨리는 원인이 되는데 AlN 중간층의 도입으로 이것을 완화시킬 수 있는 효과가 있다. 하지만, AlN 중간층이 패턴된 기판 위에 성장시킨 GaN 에피층에 미치는 영향은 명확하지 않다. 본 연구팀은 일반적인 c-plane 사파이어 기판과 플라즈마 건식 에칭을 통한 렌즈 모양의 패턴된 사파이어 기판을 이용해서 AlN 중간층과 GaN 에피층을 유기금속 화학기상증착법으로 성장하였다. 특히, 렌즈 모양의 패턴된 사파이어 기판은 패턴 모양과 패턴 밀도가 성장에 미치는 영향을 연구하기 위해 두가지 패턴의 사파이어 기판을 이용하였다. AlN 중간층 두께를 조절함으로써 최적화된 GaN 에피층을 90분까지 4단계로 시간 변화를 주어 성장 양상을 관찰한 결과, GaN 에피박막의 성장은 패턴 기판의 trench 부분에서 시작하여 기판의 패턴부분을 덮는 측면 성장을 보이고있다. 또한 TEM과 CL을 통해 GaN 에피박막의 관통 전위를 분석해 본 결과 측면 성장과정에서 성장 방향을 따라 옆으로 휘게 됨으로 표면까지 도달하는 결정결함의 수가 획기적으로 줄어드는 것을 확인함으로써 고품질의 GaN 에피층을 성장시킬 수 있었다. 그리고 패턴밀도가 높고 모양이 볼록할수록 측면 성장 효과로 인한 결정성 향상과 난반사 증가를 통한 임계각 증가로 광추출 효율이 향상 되는 것을 확인할 수 있었다. 이러한 결과를 바탕으로 최적화된 AlN 중간층을 이용하여 패턴 기판위에서 고품질의 GaN 에피층을 성장시킬 수 있었다.