• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.202-202
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.80-80
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.398-398
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• 2011

CIGS/CdS/i-ZnO의 hetero junction으로 구성된 CIGS 태양전지는 적색광 광전류-전압 곡선특성이 백색광 곡선에 비해 크게 왜곡된다. 이는 CdS층의 광흡수에 따른 광전도도의 변화가 pn junction의 에너지밴드구조를 변화시키기 때문으로 알려져 있고, 그 정도는 CdS의 deep level acceptor 트랩의 존재와 같은 CdS 박막의 특성과 밀접한 관련이 있는 것으로 판단된다. 따라서, 백색광과 적색광에 의한 광전류-전압 특성의 차이로부터 CdS 및 CdS/CIGS 계면의 전기, 전자적특성을 평가할 수 있을 것으로 기대된다. 특히, 백색광에 비해 적색광에서는 온도가 내려갈수록 광전류-전압의 왜곡이 훨씬 심해지는 것을 확인하였다. 이러한 왜곡현상은 광세기에 의한 영향은 거의 없고, 백색광과 적색광의 광스펙트럼의 변화에 의해 나타났으며, CdS의 blue photon 흡수 여부와 관련이 있는 것으로 판단된다. CIGS 태양전지는 CdS 증착을 전후로 한 열처리가 광전압을 향상시키는 것으로 알려져 있으므로, 본 연구에서는 그러한 열처리에 의한 CdS/CIGS 계면의 특성 변화를 백색광, 적색광에 의한 저온 광전류-전압 특성 측정을 통하여 분석하였다. 열처리는 CdS를 증착한 후 $100^{\circ}C$ 부터 $250^{\circ}C$ 까지 $50^{\circ}C$ 간격으로 진행하였고, 전류-전압 특성은 100K 부터 300K 까지 10K 간격으로 측정하였다. 백색광, 적색광 저온 광전류-전압 특성의 변화를 열처리에 다른 태양전지 셀효율과 비교 분석하였다.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.655-660
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• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.698-702
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• 2000

The characteristics of optical absorption in $Al_{0.24}Ga_{0.76}As/GaAs$ multi-quantum wells(MQWs) structure were investigated by using the surface photovoltage(SPV). The Spy features near 1.42 eV showed two overlapping signals. By chemical etching, we found associated with the GaAs substrate and the GaAs cap layer. The Al composition(x=24 %) was determined by Kuech's composition formula. In order to identify the transition energies. the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum wells An amplitude variation of the relative Spy intensity from the GaAs substrate, llH, and llL was observed at different light intensities. A variation in the SPY line shape of the transition energies were observed with decreasing tempera­t ture.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.7-14
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• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.6
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• pp.1596-1603
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• 1996

A single body type of fiber-optic current and voltae sensor using a rare earth doped YIG and a bismuth silicon oxide single crystsl is proposed, which is used for simultaneous measurement of the AC electric current and AC electric voltage over the trasmission lines. Experimental results showed that the fiber-optic current sensor has the maximum 7.5% error within the current range of 0A to 400A, and the fiber-optic voltage sensor has the maximum 0.87% error within the current range of 0V to 400V. The output waveforms of proposed fiber-optic sensor system has a good agreement with output waveforms of conductor current and voltage. Experimental results proved that the output of fiber-optic current sensor is not affected by the electric voltage applied to the fiber-optic voltage sensor, and also, that the output of fiber-optic voltage sensor is not affected by the electric current applied to the fiber-optic current sensor.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.254-258
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• 1999

We propose a simple technique to obtain field-induced absorption changes of an electroabsorption waveguide by using photocurrent generated inside a waveguide. Photocurrent proportional to the absorbed power and displaying Fabry-Perot interference fringes were observed and the field-induced absorption changes were derived from the ratio of resonant and anti resonant currents in the photocurrent spectra. The field-induced absorption change of InGaAsP waveguide for 1.5V reverse bias voltage at 1.55 $\mu\textrm{m}$ was determined to be $~157\cm^{-1}$.

• Information and Communications Magazine
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• v.11 no.7
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• pp.49-63
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• 1994

광전자 공학의 발전에 따라 광응용 계측기술이 산업계 각 분야에 활발히 적용되고 있다. 특히 전력계통은 초고압, 대용량화, 복잡화되어 감에 따라 전력용 광계측 기술이 더욱 유용하게 되고 있으므로, 관련기술 동향 및 국내에서 개발 적용되고 있는 시스템에 대하여 고찰해 보고자 한다.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.417-422
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• 2014

In this study, the influence degree of the scattering of the line depending on the incident energy of the radiation objective was to evaluate a new method of quantitative methods of PSNR is provided.Value of MSE and PSNR of the DR and the Target is placed at the left when there was no change in CR Target, the change appeared to ttaran MSE and PSNR value in tube voltage. Both CR and DR seen that there is a variation of the MSE and PSNR depending on the tube voltage change Computon showed that the scattered radiation effects. If the CR and DR 80 The changes in the MSE and PSNR experience the symptoms suddenly occur in areas kVp was found to affect the optoelectronic Computon E, and at the same time, the scattered radiation detector Computon Computon by scattering due to the photoelectric effect. CR and DR of the imaging device in the future on the basis of the energy bands of the photoelectric effect of 60 kVp 70 kVp, 80 kVp, 90 kVp, compares the value of the PSNR and MSE 100 kVp in accordance with the change of the tube voltage of the CR and device DR proposes jigil scattering study of the degradation of the line quality is achieved.