• Journal of the Korean Geographical Society
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• v.38 no.6
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• pp.906-921
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• 2003

This paper discusses the price effects of local growth controls on the housing markets of California jurisdictions in the late 1980s empirically. Particularly, based on spatial econometric modeling, the study focuses on the homebuilding constrained by growth controls which is one of the price effects. The modeling produces the California-wide generalizable results, differentiates among the individual effects of various growth controls on homebuilding, and covers spatial effects. Thereby, this study intends to supplement the existing work on the price effects of growth controls. The modeling results find that restrictive residential zoning had the effect of significantly restricting housing construction in the late 1980s. On the other hand, urban growth boundaries had the effect of accommodating homebuilding. Population growth or housing permit caps and adequate public facility ordinances had no significant effects on housing construction.

• Proceedings of the Technology Innovation Conference
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• 2005.02a
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• pp.268-286
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• 2005

본 연구에서는 OECD 주요 10개국을 대상으로 국가별 정보통신산업의 성장 추이를 각각 분석하고 국별 특성을 비교하는데 목적이 있다. 이를 바탕으로 각국의 정보통신산업이 경기순환 또는 단계별 발전 속성을 지니고 있는지를 파악하고 국가별 공통점과 특이점을 분석하고자 하였다. 방법론적으로 OECD 국가들의 정보통신산업 GDP 추이 및 성장률의 움직임을 국면전환 (regime change) 확산과정으로 묘사함으로써 각 국가별 정보통신산업 발전 양상의 특징 및 국면전환 시점 등을 포착해 내고자 하였다 추세를 갖는 대표적 확산과정인 GBM 모형과 평균회귀 성향을 갖는 대표적 확산과정인 Vasicek 모형에 각각 마코프 국면전환을 도입하여 국가별 정보통신산업 GDP 및 GDP 성장률의 추이에 있어 국면 전환 여부와 독특한 발전 특성을 비교 분석하였다. 실증분석 결과 정보통신산업 GDP의 성장률과 변동성 사이에는 높은 상관관계가 있었으며, 한국, 멕시코 등은 고성장, 고변동성을, 미국, 프랑스, 일본 등은 저성장, 저변동성의 특성을 보이는 것으로 나타났다 또한 한국의 경우 유일하게 성장률과 변동성 모두 국면전환이 일어나는 국가로 나타났다. 장기평균 성장률의 특성에 따라 분류한 결과, 한국, 일본, 미국, 멕시코, 뉴질랜드는 고성장에서 저성장으로의 국면전환, 핀란드와 덴마크는 경기 순환적 국면전환, 노르웨이, 프랑스, 캐나다는 단일 국면으로 분류할 수 있었다. 특히 한국의 경우 평균회귀 속도와 변동성이 타 국가에 비해 높은 특성을 보여주었다. 본 연구는 정보통신산업을 미시적 분석이나 세부 항목별 정량적 분석을 통해서가 아니라 산업의 발전 속성 및 경기 순환 등의 관점에서 분석함으로써 정보통신산업 정책의 수립 및 집행을 거시적 안목 하에 정립할 수 있게 한다는 데 의의를 가진다. 또한 경제변수를 묘사하는데 있어 국면전환 확산과정을 사용함으로써 향후 실물옵션 등을 통한 기술 및 무형자산의 가치평가에 있어 기초자산의 움직임을 보다 정확히 포착해 낼 수 있는 프로세스를 제공하였다는데 또 다른 의의를 갖는다고 하겠다.

• Korean Journal of Social Welfare Studies
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• v.43 no.1
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• pp.249-273
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• 2012

Certain professionals face repeated exposure to traumatic events throughout their career. Although typically linked to pathological outcomes, research has identified sustained positive benefits and posttraumatic growth (PTG) as consistent posttrauma outcomes in occupational exposed to trauma. This study investigated the association of occupation, subjective psychological distress to a traumatic event, and demographic characteristics with posttraumatic growth in emergency workers (firefighters, rescue, and ambulance personnel), subway operators, and child protective service workers. The study led to the following conclusions: First, all three groups are risk groups of PTSD, especially, subway operators demonstrated the highest degree. Child protective service workers demonstrated the highest degree of PTG and emergency workers and subway operators followed respectively. Second, vicarious trauma and PTG were significantly correlated, in particular, invasion and avoidance were more highly correlated. Third, multivariate analysis revealed that occupation, invasion, avoidance, religion, and sex were significantly associated with PTG. Discussion addresses the need to serve mental health service and to apply concept of PTG for occupations exposed to trauma.

• International Area Studies Review
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• v.14 no.3
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• pp.86-107
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• 2010

Prior research on the relationship between output volatility and growth has produced mixed results, failing to provide clear empirical evidence on the sign of the relationship. In this paper, we raise the possibility that such failure is due to misspecification in empirical models previously used, i.e., not taking into account the business cycle dependence of the volatility-growth relation. We set off with the conjecture that higher volatility exerts qualitatively different effect on growth depending on whether the economy is in expansion or contraction. We estimate a series of ARCH-type models with the monthly industrial production data of the U.K., and find strong evidence suggesting that the volatility-growth relation is positive when the economy is in expansion, while higher volatility lowers growth rate in the contraction phase. We also find evidence supporting that the volatility-growth relation estimated in the paper captures a a causal relation, not a bidirectional correlation.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.266-271
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• 2004

A very small amount of SiO$_2$ was locally added in sintered BaTiO$_3$ ceramics and then heat-treated at 135$0^{\circ}C$. In the region where SiO$_2$ was not added, grain growth occurred very slowly. In the region where a very small amount of SiO$_2$ was added, however, grain growth occurred very actively. After long time annealing at 135$0^{\circ}C$, abnormal grains appeared only in the part where SiO$_2$ was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO$_2$ was added. These results showed that centimeter-sized BaTiO$_3$ single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• Korean Journal of Social Welfare
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• v.65 no.4
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• pp.165-193
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• 2013

This study purposes to explore the growing process through spousal bereavement in later life, and to develop the theory. A qualitative research was conducted, and the participants were 17 seniors. The analysis according to Strauss and Corbin's grounded theory(1998), resulted in 143 concepts, 43 subcategories, and 19 categories. Range analysis according to paradigm showed that the causal conditions were 'marital relationships', 'independent/dependent tendencies', and 'emotional readiness for the death of a spouse', and the phenomena were 'depression', 'hopelessness', 'daily stress', 'psychological intimidation', 'regret', and 'sense of being freed'. The contextual conditions that affect these phenomena were 'desire for intimate personal relationships' and 'desire to maintain independence'; the action/interaction strategies to manage the phenomena were 'facing reality' and 'efforts for construction of the new life'; and the mediating conditions that promote or suppress these action/interaction strategies were 'social support' and 'spirituality'. The results were 'reconstruction of the meaning in life', 'increase in self-esteem', 'reinforcement of social network' and 'embrace and acceptance'. Furthermore, when personal growth after bereavement of a spouse was analyzed focusing on changes over time, the growth process consisted of three steps: 'sadness and despair', 'embracing and moving forward', and 'personal growth'. The pattern analyses were performed to typify recurring relations by category, and 5 types were derived. The results of our study show that personal growth after spousal loss is an integrative process in life after crisis, and can be conceptualized as the process of overcoming the despair that immediately follows the death of a spouse, seeking a new life by actively taking control, and discovering a strengthened self.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.824-827
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• 2002

12inch 이상의 웨이퍼 성장에는 실리콘 용탕의 대류를 억제하여 웨이퍼의 순도를 높이기 위해 자기장 특히, 웨이퍼의 성장방향에 수직인 '수평자장'을 인가하는 방법이 사용된다. 현재 '자기장인가 방식', 특히 초전도를 사용한 자장인가 방식이 직경 1600mm에 이르는 용탕의 용액을 제어하는 유일한 방법으로 받아들여지고 있다. 본 논문에서는 12inch 실리콘 웨이퍼 성장용 초전도 마그네트 개발의 전단계로 개발중인 8inch 웨이퍼 성장용 수평자장형 초전도마그네트의 제작과정과 성능평가 결과에 대해 다루었다. 본 연구를 통해 액체헬륨의 증발을 최소화하기 위한 재응축형 극저온 용기에 대한 기술이 개발 되었으며, diode를 이용한 ��치보호부, HTS 전류리드의 ��치 protection부 등의 부속기술이 개발되었다. 초전도 마그네트는 내경 1400mm의 saddle type으로 이의 제작에 있어 많은 기술적 난재들을 경험해야 했다. 전체 시스템에 대한 성능평가 결과, 극저온용기 및 부속장치에 대한 결과는 만족스러웠으나, 코일부의 성능은 계획한 목표에 미치지 못했다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.406-406
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• 2012

ZnO는 큰 여기자 결합 에너지, 낮은 유전 상수, 높은 화학적 안정도를 가지고 있기 때문에 전자소자 및 광소자로 많이 응용되고 있다. 여러 가지 불순물을 주입하여 ZnO의 전기적 및 광학적 성질을 향상시키기 위한 연구가 진행되고 있다. 여러 가지 불순물 중에 Zn와 물리적 및 화학적 성질이 유사한 Cu를 도핑하여 전기화학적성장(electrochemical deposition) 방법으로 ITO가 코팅된 유리 기판 위에 ZnO 박막을 성장하였다. Cu를 도핑하여 ZnO박막을 성장한 결과 구조적으로 ZnO 박막이 나노로드 형태에서 부분적으로 나노세선 또는 나노로드 형태로 변화함을 확인하였다. 광류미네센스 측정 결과는 벌크 ZnO 박막과 비교하여 Cu를 도핑함으로써 ZnO 나노세선이 3.37 eV의 에너지를 가지는 파장의 크기가 줄어들었고 여러 방향으로 ZnO 나노세선이 형성됨을 알 수 있었다. Cu를 도핑함으로써 ZnO 나노세선의 구조적 변화는 크기 않으나 에너지 밴드갭을 변화할 수 있음을 알 수 있었다. ZnO 나노세선의 광학적 성질을 Cu를 도핑하여 변화할 수 있음을 관측하였으며 불순물을 도핑하여 밴드갭을 변화하여 전자소자 및 광소자를 제작하는 기초지식으로 사용할 수 있다.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.52-57
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• 1992

The macro defects of $LiNbO_3$ crystals grown by the Czochralski method were strongly influenced by the single crystal growth parameters such as growth rate, thermal gradient and crystal rotation rate. The optimum growth conditions of a $LiNbO_3$ single crystal with 1" in diameter were $70~100^{circ}C/cm$ temperature gradient, 5~10 mm/hr growth rate and 40 rpm crystal rotation rate. In these conditions, we could grow crystals which had no cellular structure with easy diameter control, and any crack was not formed after the crystal was cooled.oled.