• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.197-206
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• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• 대한방사선방어학회:학술대회논문집
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• 2009.11a
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• pp.166-167
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• 2009

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.406-417
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• 1997

A numerical study was conducted on the optimum magnetic field intensity and asymmetric factor for uniform axial oxygen concentration in 8 inch silicon single crystal growing process by magnetic Czochralski method. For constant shape of cusp field, a change of coil and crucible position were compared. In case of symmetric cusp field, magnetic field intensity variation shows concave downward with crystal growing for uniform, axial oxygen concentration. A numerical results show similar value of standard deviation of average oxygen concentration for uniform oxygen concentration between coil and crucible position change. In case of asymmetric cusp field. asymmetric factor is increased with crystal growing to have uniform oxygen concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.463-469
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• 1999

The potassium lithium niobate $K_3$$Li_2$$Nb_5$$O_{15}$ single crystals were growing in $K_x$$Li_{1-x}$$NbO_3$ (x = 0.4~0.6) chemical formular by the Czorchralski method. Crystal growth is studied in two orientations with growth along a-axis and c-axis. We have subjected this crystal to x-ray diffraction studies and found that they are single-crystalline and belong to tetragonal system with the lattice parameters a = b = 12.577 $\AA$ and c = 3.997$\AA$. The temperature dependence of dielectric constant was measured in the region of the phase transition. Curie temperature and diffuseness of phase transition are influenced by composition concentration. The composition and cation distribution of ferroelectric TB-type niobate crystals has a strong influence on the ferroelectric properties. Growth condition, optical transmittance, etching pattern and dielectric properties are presented and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.14-19
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• 2001

The crystal size was determined as a function of reaction temperature, during the crystallization process of NaX zeolite. The measured rate constants for linear growth were as 0.0441$\mu\textrm{m}$/h at $80^{\circ}C$, 0.0595$\mu\textrm{m}$/h at $90^{\circ}C$ and 0.0972$\mu\textrm{m}$/h at $100^{\circ}C$, respectively. The activation energy calculated from the relation between the linear growth rate an the reaction temperature was 43.243kJ/mol. The reaction of crystal growth were revealed as 20 days at $80^{\circ}C$, 16 days at $90^{\circ}C$ and 9 days at $100^{\circ}C$, respectively. Both the final product crystal size an the crystallization time were decreased with increasing reaction temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.230-237
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• 1994

The paper studies the growth and application of LBO Crystal and points that thermodynamics and dynamics model of crystal growth should be developed in high-$\eta$(viscosity) melt. The measurement on properties of crystal resonator and press-controlled oscillator indicates that this kind of crystal is one kind of piezo-electric crystal materials which has large-market application potentiality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.77-82
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• 1992

When a crystal is grown by FZ process, the melt zone is located at between the solid of upper and lower side and is kept by the solid-liquid interface tension. On the surface of the melt zone, a surface tension gradient is occured by the difference of temperature and solute concentration, it is the driving force of marangoni flow. The crystal even in the steady state growth can become imperfect for the dislocation distribution and the solute concentration in the peripheral region of the crystal are higher than those in the inner part and the probability of the formation of the defects such as voids, bubble penetration, secondary phase creation and crack is high near the solid-liquid interface. This is because the solid -liquid interface becomes irregular because of the local variation of temperature in that region due to marangoni convection.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.

• The Korean Journal of Rheology
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• v.4 no.1
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• pp.52-61
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• 1992

초고분자량 폴리에틸렌을 파라 크실렌에 녹인 희박 용액에 전단흐름을 가해 섬유를 뽑아내는 방법에 대해 연구하였다. 표면성장이라 불리는 이 방법을 용액내에서 회전하는 rotor 의 표면에 흡착된 젤 층에, 결정성이 강한씨(seed)를 접촉시킴으로써 엉킨 분자쇄들이 전단력에 의해 신장되어 분자의 자유에너지가 증가하도록 하여 연속적으로 고강력, 고탄성 률 결정을 뽑아내게 한 것이다. 이표면성장법으로 섬유를 얻는데 있어서 결정화온도 rotor 속도, 권취속도 및 고분자 농도와 같은 결정화 변수를 변화시키면서 섬유의 물리적 성질에 미치는 영향을 관찰하였다. 이방법으로 섬유를 성장시키면 열역학적 평형온도(118.6$^{\circ}C$) 이상 인 12$0^{\circ}C$에서 성장시켰을 때 133GPa의 인장 탄성계수 3.1%의 절단신도에서 5.04GPa의 고 강력을 갖는 섬유를 얻을수 있었다. 또한 이방법에 있어서는 결정화 온도가 물리적 성질에 가장 큰 영향을 미치는 인자로 작용하였다, 고분자 농도의 영향은 0.7wt.% 이상에선 물리적 성질이 더 이상 개선되지 않았으며 오히려 장력의 증가로 불안정한 성장을 보였다. 또한 0.5wt%이하에서는 젤층의 형성이 둔화됨을 볼수 있었다. 결국 물리적 성질의 측면에서 볼 때 0.5~0.7wt%에서 최적조건을 보여주었다.