• Analytical Science and Technology
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• v.23 no.2
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• pp.103-108
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• 2010

Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.149-156
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• 1993

Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.521-527
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• 1997

Ruby single crystals of 6-7 mm in dialneter and 20-25 mm in length were grown by the xenon-arc type floating zone method using a self-designed FZHY1, Calcination and sintering conditions were investigated and optimum growth conditions were established for controlling the factors such as growth rates, rotation speeds and cooling rates. Also the available energy levels of $Cr^{3+}$ were calculated from transmission data. The growth direction of the crystals was [1010] direction identified by Laue back reflection pattern. The distribution of refractive indices on the wafer of the grown crystals was homogeneous except for the edges of the wafer. The crystals could be used as a laser material with a wavelength of 693 nm and a metastate level.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.57-62
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• 1994

$YbFeCoO_4$ single crystal was grown by floating zone method. The atmospheric condition of the growth was controlled in air and the growth rate was 1~2 mm/hr. After melting the feed rod of the composition of $YbFeCoO_4$, $YbFeCoO_4$ was decomposed to $YbFeCoO_4$ and CoO phase in the initial state of the growth. The liquid composition, however, changed to the direction of the eutectic point along the liquidus line and then stopped at the point in which $YbFeCoO_4$ single crystal could be grown. The growth direction of the crystal was preferred orientation [110], perpendicular to the c-axis in the hexagonal system due to using the polycrystalline seed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.113-113
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• 2018

환경 친화형 전기자동차, 하이브리드 자동차, 전철 등에서는 고내압 및 소형으로 전력손실을 감소시킬 수 있는 파워 디바이스가 필수이다. 최근, 실리콘 카바이드(SiC, silcon carbide)는 기존 실리콘(Si)보다 스위칭 손실의 저감 및 고온환경에서의 동작 특성이 우수하여, 차세대 저 손실 전력반도체 재료로서 기대를 받고 있다. 용액 성장 법에서 고품질 SiC 결정을 만들 수 있다. 그러나 늦은 성장 속도 때문에 SiC의 양산을 어렵게 하고 있다. 현재까지 성장 속도 향상을 위한 Si용매에 Cr을 첨가하여 탄소 용해도를 높이는 방법이 사용되고 안정된 성장을 위한 Si-Cr용매에 Al를 첨가하는 등 다양한 금속을 첨가하는 방법이 이용되고 있다. 선행 연구에서는 다양한 용매인 탄소 용해도를 실측하고 특히 큰 탄소 용해도를 보인 것은 Co이었다. 본 연구에서는 $Si_{0.6}Cr_{0.4}$원료와 Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매에 의한 SiC용액 성장을 실시하고 결정 성장 속도 및 표면 상태의 변화를 검토했다. on-axis 4H-SiC(000-1)을 사용한 Top-seeded solution growth(TSSG)법과 원자 비율로 $Si_{0.6}Cr_{0.4}$와 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매를 이용하여 SiC 용액 성장을 실시했다. Ar가스에서 저항 가열로 내를 치환 후에 $1800^{\circ}C$까지 가열하고 종자화 후에 120분간 유지하고 결정 성장을 실시했다. 냉각 후에 성장의 표면에 남은 용매를 $HF+HNO_3$에서 제거했다. 광학 현미경을 이용하여 결정면과 두께를 관찰 측정했다. Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 경우는 $Si_{0.6}Cr_{0.4}$의 경우보다 결정 성장 속도가 향상됐다. 또한 $Si_{0.6}Cr_{0.4}$보다 step-flow의 성장을 나타낸 결정의 표면이 전반적으로 관찰됐으며 안정된 결정성장을 나타냈다. 본 연구에서 실시한 연구 방법과 결과는 고품질 및 고속의 SiC 용액성장을 위한 매우 유용한 자료로 활용 될 수 있을 것으로 판단한다.

• Korean Journal of Crystallography
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• v.13 no.1
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• pp.41-47
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• 2002

La/sub 1-x/Ca/sub x/MnO₃ manganese oxide were grown using the floating zone image furnace with halogen lamps as heat source. The growth condition was 4∼6 mm/hr growth rate in air atmosphere, 45∼50 rpm and 20∼25 rpm of rotation rate of feedrod and growing crystal, respectively. Characterization analyses of the crystal were carried out using XRD, SEM, and EPMA. Orientation of crystal was determined using EBSD. The electromagnetic properties were measured with Quantum Design PPMS by 4 point probe method and resulted MR value of 462% at 215 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.49-52
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• 2016

The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.53-57
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• 2016

6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growth behavior was different according to the different growth temperatures. It was revealed that the temperatures at the source feeding and at the crystal growth position had to be controlled independently. In this report, the effect of growth temperature on the SiC crystal growth was discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.76-80
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• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.63-67
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• 2002

Langasite single crystal was grown by Xenon-arc floating zone method in mixutre of Af and $O_2$ gas atmosphere. Growing and rotation speed were 1.5 much and 15 rPm respectively. The grown crystal had a c-axis and color of orange. Composition of the grown crystal was $La_{3.10}Ga_{4.73}Si_{1.17}O_{14}$. Activation energy of the crystal was 0.23 eV and was PTC characteristics.