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Effect of argon flow on the quality of Czochralski silicon crystal (쵸크랄스키 실리콘 단결정의 특성에 미치는 아르곤 유동의 영향)

  • 김정민;이홍우;최준영;유학도
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.2
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    • pp.91-95
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    • 2000

  • The effects of argon gas flow on the axial temperature gradient near the interface, the oxygen concentration, and the radial oxygen uniformity was investigated for 8-inch CZ silicon growth. As argon flow rate was increased, the temperature gradient was increased in the crystal near the crystavmelt interface and the oxygen content in the crystal was decreased. But the radial oxygen uniformity was deteriorated. It was found that argon flow is one of the important growing parameters to affect the quality of crystals such as oxygen content and uniformity.

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Floating-Zone Growth of Single Crystal Olivine $[(Mg_{1-x}Fe}_{x})_2SiO_4]$ (Floating Zone법에 의한 올리빈 $[(Mg_{1-x}Fe}_{x})_2SiO_4]$단결정 성장)

  • 정광철;강승민;신재혁;한종원;최종건;오근호;박한수;문종수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.1
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    • pp.85-92
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    • 1993

  • Large single crystals of olivine were grown by using image furnace(floating zone furnace)under controlled partial pressure of oxygen. The transparent crystals have maximum sizes 65mm in length by 7mm in diameter. When partial pressure of oxygen was decreased, the portion of secondary phases in crystals were increased so that it made crystals dark brown. The secondary phases were proved to be solid solution of Mg, Si, and Fe by electron microprobe analysis. Mg was major portion and the rest was minor.

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