• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.57-62
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• 1994

$YbFeCoO_4$ single crystal was grown by floating zone method. The atmospheric condition of the growth was controlled in air and the growth rate was 1~2 mm/hr. After melting the feed rod of the composition of $YbFeCoO_4$, $YbFeCoO_4$ was decomposed to $YbFeCoO_4$ and CoO phase in the initial state of the growth. The liquid composition, however, changed to the direction of the eutectic point along the liquidus line and then stopped at the point in which $YbFeCoO_4$ single crystal could be grown. The growth direction of the crystal was preferred orientation [110], perpendicular to the c-axis in the hexagonal system due to using the polycrystalline seed.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.75-80
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• 1997

A perovskite relaxor ferroelectrics PMN is used as an important material to investigate the diffusive phase transition phenomena. In this study PMN single crystals were grown and the microstructure were observed. For the growth of PMN single crystals, the spontaneous nucleation technique and the TSSG technique were used. 2-5mm single crystals were grown from PbO self flux and it was observed that only PMN crystals were grown when excess MgO was added over 100% as flux. Single crystals with well developed (001) faces were obtained from PbO-B2O3 flux. single crystals larger than 1 cm were grown from PbO-B2O3 flux by TXXG technique. For higher quality crystals, optimization of the variables such as the rotation speed of seed crystal, the orientation of seed crystal, and cooling rate is needed. With grown crystals, it was confirmed by TEM diffraction pattern of thin plate crystal that the 1:1 ordering of Mg2+ and Nb5+ with small volume exists.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.18-30
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• 1993

A numerical analysis has been carried out on the Czochralski flow fields when uniform and nonuniform magnetic fields are applied. Czochralski flow fields are governed by buoyancy forces, thermocapillarity, centrifugal forces, and applied magneic fields. In this analysis, pressure and three components of velocity vectors are obtained, and circumferential electrical currents are calculated. When a uniform magnetic field is applied, all the velocity components are decreased and the circumferential electric currents near the crystal surface are increased as the magnetic field intensity is increased. In the case of a nonuniform field, the flows in a meridional plane are suppressed and the circumferential velocity is increased as the non uniformity is increased. The understanding on the Czochralski flow fields under the influence of magnetic fields can lead to the study on the behavior of the concentration of the solute and impurities.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.141-157
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• 1995

Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.209-214
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• 1995

Abstract 0.2 wt % $Fe_2O_3$ doped $SrTiO_3$ single crystals were grown by floating zone method in air and Nz atmosphere, respectively. The growth rate was fixed at 5 mm/hr and rotation speed was maintained at 30 rpm. As - grown crystals were cut perpendicular to its growth direction and then, annealed at 900, 1000 and $1100^{\circ}C$ for 2 hours in Nz atmosphere. Resistivities of each samples were measured and then converted into conductivities. By using these conductivity values, the activation energies were calculated and by means of the calculated activation energies, mechanism which contribute to increasing the electrical conductivity were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.44-49
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• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.85-92
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• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.215-222
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• 1995

Nb doped strontium titanate single crystals were grown by the floating zone method. The doping amount of $Nb_2O_5$ was 0.2 wt %. Those crystals were grown in air and N z atmosphere and the growth rate was 5 mmlhr and rotation speed of upper and lower shaft was 30 rpm. The shapes of melt - feed rod interface depending on sintering temperatures were observed. In air atmosphere, the flow rate of air was 1.5 ${\ell}/min$ and in $N_2$ atmosphere, that of $N_2$ gas was 0.5 ${\ell}/min$. As grown crystals were analyseQ by XRD, Laue back - reflection and chemical etching. After annealing in $N_2$ atmosphere, resistivities of crystals were measured and the activation energies of each samples were calculated.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.32-32
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.381-388
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• 2000

The temperature and velocity fluctuations occurred by the baroclinic instability in the melt for Czochralski crystal growth method were experimentally investigated. Wood's metal, which has similar Pr number to the silicon melt, was used as the working fluid and azimuthal velocity was measured using incorporated magnet probe. The azimuthal velocities near the free surface are faster than velocities near the bottom and the rotational velocities near the model crystal become very fast. The results of measured temperature fluctuation as increasing rotation rate were shown that baroclinic instability occurred at the region of Ro<1.01, Ta>$9.63{\times}10^8$. In these region, the fluctuations of temperature and velocity have the same frequency.