• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.160-161
• /
• 2009

마이크로웨이브 플라즈마 화학기상증착(MPCVD) 시스템을 이용하여 실리콘 웨이퍼 위에 나노결정질 다이아몬드 박막을 증착하였다. 공정압력, 마이크로웨이브 전력, Ar/$CH_4$ 조성비를 일정하게 놓고 기판온도를 $400^{\circ}C$ 및 $600^{\circ}C$, 증착시간을 0.5, 1, 4시간으로 변화시켜 박막의 성장 과정을 관찰하였다. 성장 초기에 약 30 nm 크기의 나노 결정립으로 이루어진 구형 입자가 형성되어 시간의 경과에 따라 입자들이 성장하고 4시간 이후에는 입자들이 서로 붙어 완전한 박막을 형성함을 관찰하였다. 같은 증착시간에서 기판온도가 $400^{\circ}C$에서 $600^{\circ}C$로 증가함에 따라 다이아몬드 입자의 크기가 증가하였다. 시간의 경과에 따라 기판 위에서 입자들이 차지하는 면적의 비율은 증가하였다.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1997.05b
• /
• pp.11-16
• /
• 1997

원자로 압력용기강의 제조열처리인 ？칭과 템퍼링 중간에 페라이트와 오스테나이트가 공존하는 영역에서 2상영역열처리를 추가한 후 템퍼링조건을 조정함으로써 파괴인성을 향상시키는 열처리 공정을 개발하였다. 새 열처리공정을 적용하면 기존공정에 비하여 강도는 크게 감소하지 않으면서 충격인성과 연성이 크게 증가하고, 천이온도가 약 2$0^{\circ}C$ 감소하였다. 2상영역열처리를 하면 연한 템퍼드 베이나이트 기지에 비교적 강한 템퍼드 마르텐사이트가 균일하게 분산된 복합조직을 얻을 수 있고, 유효 결정립의 크기가 감소하여 균열진전이 억제되었다. 또한 기존공정의 판상 탄화물 대신 구형 탄화물이 형성되기 때문에 응력집중이 완화되어 파괴저항성이 향상되었다. 그리고 2상 영역열처리후 템퍼링 정도를 낮추면 탄화물 크기가 작아지기 때문에 균열발생이 억제되어 저온 충격인성이 향상되었다.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.794-799
• /
• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.80-83
• /
• 2005

$Nd:YVO_4$ 연속발진 레이저 (CW laser)를 이용하여 다결정실리콘 (CLC poly-Si)을 제작하였다. CLC 다결정 실리콘의 결정화 영역은 결정립 크기에 따라 SLC(Sequential Lateral Crystallization) 영역, SLG(Super Lateral Grain) 영역 및 Small Grain 영역으로 구분된다. 레이저를 중첩스캔 하여 제작한 CLC 다결정실리콘의 경우, 레이저 스캔 경계에서 단결정립이 형성됨을 SEM으로 확인하고, CLC 다결정실리콘의 결정성을 XRD와 라만 스펙트럼(Raman spectrum)을 이용하여 조사하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.5
• /
• pp.190-195
• /
• 2014

Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

• Journal of the Korean Magnetics Society
• /
• v.6 no.4
• /
• pp.218-224
• /
• 1996

The magnetic properties and crystallization behaviors of $Fe_{83-x}Al_{x}Nb_{5}B_{12}(X=1~5at%)$ alloys were investigated. The $Fe_{80}Al_{3}Nb_{5}B_{12}$ alloy was developed a very good soft magnetic material with ultra-fine grain structure in Fe-Al-Nb-B system alloys. When 1 at% of Cu was added in Fe-Al-Nb-B alloy, the soft magnetic properties were found to improve significantly through the reduction of the grain size upto about 6~7 nm at $450^{\circ}C$. The magnetic properties of the $Fe_{79}Al_{3}Nb_{5}B_{12}Cu_{1}$ alloy were as follows : ${\mu}_{eff}(1\;kHz)=26,000,\;B_{10}=1.45\;T,\;H_{c}=25\;mOe,\;P_{c}(100\;kHz,\;0.2\;T)=55\;W/kg$, respectively.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.641-646
• /
• 2001

The $CoSi_2$ layers have been in-situ grown on undoped poly-Si by the reactive chemical vapor deposition of $Co({\Eta}^5-C_5H_5)(CO)_2$ at $650^{\circ}C$ and their thermal stabilities have been investigated in the temperature range of 800 to $1000^{\circ}C$. The $CoSi_2$ layer grown by the in-situ method had grains with large area of (111) plane, while grains with little area of (111) plane appeared on the $CoSi_2$ layer grown by the conventional two-step method where $CoSi_2$ formed first and transformed to $CoSi_2$. The thermal stability of the $CoSi_2$ layer grown by the in- situ process was improved by more than $100^{\circ}C$ higher than that of the $CoSi_2$ layer grown by the conventional two-step process. The $CoSi_2$ layer grown in situ on a large-grained Poly-Si was stable up to $950^{\circ}C$. The effect of stability improvement by the in situ growth was more pronounced when the grain sizes of the poly-Si substrate were small. The improved thermal stability of the in-situ grown $CoSi_2$ layer could be mainly due to the formation of a uniform $CoSi_2$ layer with the $CoSi_2$ grains, which are in the form of epitaxial-like growth on the each poly-Si grains, causing a reduction of the interfacial energy of the system.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.1
• /
• pp.16-20
• /
• 2005

In order to improve electrical conductivity and mechanical properties of 8YSZ SOFC electrolyte material, we used Al₂O₃ as an additive and applied the spark plasma sintering (SPS) method. The sintered bodies were densified above 96 ％ of theoretical density at 1200℃ and possessed microstructures composed of homogeneous grains less than 1 ㎛ in size. The addition of Al₂O₃ improved fracture toughness and bending strength by inhibiting grain growth of 8YSZ and increased total ionic conductivity because grain interior conductivity appeared to remain constant and grain boundary conductivity increased. It was assumed that the dissolution of Al₂O₃ into 8YSZ which was inevitable problem at commercial sintering method was effectively prohibited by the SPS technique with a relatively low sintering temperature and the reaction between Al₂O₃ and SiO₂ present at grain boundary to produce the crystalline Al/sub 2-x/Si/sub l-y/O/sub 5/ phase, resulting in the increase of grain boundary conductivity.

• Journal of Sensor Science and Technology
• /
• v.9 no.3
• /
• pp.248-255
• /
• 2000

Penning type sputtering system which has two opposed targets was implemented and the physical characteristics of the deposited carbon nitride films were investigated. When argon ratio was reduced and nitrogen ratio was increased in the sputtering gas mixture, Fe was less sputtered. The grain size of grown carbon nitride films was distributed from $150{\AA}$ to $250{\AA}$. As nitrogen partial pressure increases, growth rate and nitrogen incorporation in the film increases.

• Proceedings of the KIEE Conference
• /
• 2008.05a
• /
• pp.199-200
• /
• 2008

ZnO을 주원료로 하고 첨가제로 $Bi_2O_3$, $Sb_2O_3$, $Nd_2O_3$, CoO, $Cr_2O_3$, $MnO_2$, NiO를 고정한 후 $Y_2O_3$ 첨가량에 바리스터의 전기적 특성을 검토하였다. $Y_2O_3$ 첨가량이 증가할 수록 바리스터 전압이 직선적으로 증가함을 확인할 수 있으며 결정립계에 존재하는 스핀넬상에 $Y_2O_3$가 이차상으로 존재함을 확인 할 수 있었다. $Y_2O_3$ 첨가에 따라 ZnO 결정입자 성장을 방해하여 바리스터 전압을 증가시키는 반면 결정립의 크기를 불균일하게 하여 유전율을 감소시키고 유전손실은 증가함을 확인하였다. 본 연구 결과 $Y_2O_3$ 첨가로 바리스터 전압은 350 V/mm이상을 얻을 수 있으며 누설전류를 $1{\mu}A$이하로 하는 조성을 얻을 수 있었으며 소형 바리스터 제작이 가능함을 확인하였다.