• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.04a
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• pp.103-108
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• 2011

The turbulent mixing of a kerosene/liquid oxygen coaxial swirl injector under supercritical pressures have been numerically investigated. Kerosene surrogate models are proposed for the kerosene thermodynamic properties. Turbulent numerical model is based on LES(Large Eddy Simulation) with real-fluid transport and thermodynamics over the entire pressure range; Soave modification of Redlich-Kwong equation of state, Chung's model for viscosity/conductivity, and Fuller's theorem for diffusivity to take account Takahashi's compressible effect. The effect of operating pressure on thermodynamic properties and mixing dynamics inside an injector and a combustion chamber are investigated. Power spectral densities of pressure fluctuations in the injector under various chamber pressure are analyzed.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.175-177
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• 2007

This paper is concerned with a performance analysis using a wired/wireless gateway based on DeviceNet. For the performance analysis, the data transmission time between DeviceNet and the wireless devices is investigated and analyzed. The experimental results show the perfom1ance in terms of the polling/COS service time and end-to-end delay.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.84-92
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• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.15-23
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• 1998

In this paper, distributed mixer is studied at microwave frequency. The circuit of distributed mixer composed of gate 1,2, drain transmission lines, matching circuits in input and output terminal, DGFET's. For impedance matching of input and output port at higher frequency, image impedance concept is introduced. In distributed mixer, a DGFET's impedances are absorbed by artificial transmission line, this type of mixer can get a very broadband characteristics compared to that of current systems. A RF/LO signal is applied to each gate input port, and are excited the drain transmission line through transcondutance of the DGFET's. The output signals from each drain port of DGFET's added in same phases. We designed and frabricated the distributed mixer, and a conversion gain, noise figure, bandwidth, LO/RF isolation of the mixer are shown through computer simulation and experimentation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.1-9
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• 2007

For an efficient implementation of cryptosystems based on arithmetic in a finite field $GF(2^n)$, their hardware implementation is an important research topic. To construct a multiplier with low area complexity, the divide-and-conquer technique such as the original Karatsuba-Ofman method and multi-segment Karatsuba methods is a useful method. Leone proposed an efficient parallel multiplier with low area complexity, and Ernst at al. proposed a multiplier of a multi-segment Karatsuba method. In [1], the authors proposed new $MSK_5$ and $MSK_7$ methods with low area complexity to improve Ernst's method. In [3], the authors proposed a method which combines $MSK_2$ and $MSK_3$. In this paper we propose an efficient multiplication method by combining $MSK_2,\;MSK_3\;and\;MSK_5$ together. The proposed method reduces $116{\cdot}3^l$ gates and $2T_X$ time delay compared with Gather's method at the degree $25{\cdot}2^l-2^l with l>0.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.913-916
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• 2009

This paper describes a hardware design of hash processor which implements HAS-160 algorithm adopted as a Korean standard. To achieve a high-speed operation with small-area, the arithmetic operation is implemented using a hybrid structure of 5:3 and 3:2 carry-save adders and a carry-select adder. The HAS-160 processor synthesized with $0.35-{\mu}m$ CMOS cell library has 17,600 gates. It computes a 160-bit hash code from a message block of 512 bits in 82 clock cycles, and has 312 Mbps throughput at 50 MHz@3.3-V clock frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.5
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• pp.509-520
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• 1992

AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1039-1046
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• 2007

In this paper, a coupled-defected ground structure(C-DGS) using negative inductive coupling is proposed and a bandstop filter(BSF) using C-DGS is designed and fabricated. The proposed C-DGS is the closely-located DGS cells for the negative coupling, the negative coupling of ground currents between adjacent DGS cells greatly improves the stopband characteristics. The proposed BSF utilizing the sharp cutoff response of the C-DGS has a -10 dB rejection band from 4 GHz to 11.3 GHz. A maximum attenuation rate is -64.3 dB/GHz in 3 cell structure, -108 dB/GHz in 5 cell structure. The C-DGS BSF shows the improved attenuation rate 3.8 times in 3 cell structure, 2.4 times in 5 cell structure, Also, the C-DGS BSF is reduced to 35.2 % and 40 % of the DGS BSF, respectively, due to the closely-located DGS cells. We fabricated the single gate mixer using C-DGS BSF. The single gate mixer has 6.6 dB conversion gain.