• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.243-253
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• 1998

PVC membrane, which has been used for membrane of electrolyte sensors, shortened sensor lifetime due to poor adhesion to sensor surface and exhibited difficulty in standardization and mass-production. To overcome these problems, the membrane solution was prepared with neutral carrier, matrix(TEOS:DEDMS=1:3), solvent(ethanol), and a catalyzer(HCl). The fabricated electrolyte sensors showed typical electrical characteristics of MISFET (metal-insulator-semiconductor field-effect transistor). The K-, Ca- and Na-ISFETs showed sensitivity of 53, 25 and 50 mV/decade in wide concentration range, respectively. The response time was about 90 seconds and the drift was 0.05mV/hour. These results suggest that the sol-gel method and the lift-off technique can be applied to formation of membranes and expected to improve mass-productivity, standardzation of the sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.140-140
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• 2003

Ti:LiNbO$_3$ 광 도파로를 이용한 광 변조기의 마이크로파 손실을 감소시키고 RF와 광파의 속도정합의 조건하에서 초고속 광변조의 제작을 위해서는 두꺼운 TW(travelling wave) 전극이 필수적이다 또한, 두꺼운 Au 전극이 우수한 RF 특성을 갖기 위해서는 도금된 Au 전극이 고순도의 작은 grain size를 갖는 도금 층을 제조하여야 하며, 도금 후 Au 층의 뒤틀림 현상이 작아야 한다. 따라서, 본 연구에서는 LiNbO$_3$ 기판 위에 30nm Ni-Cr과 50nm의 Au의 기저 막을 올렸으며 감광제를 이용한 photo-lithography 공정으로 CPW(coplanar waveguide) 구조의 패턴을 약 13$\mu\textrm{m}$의 두께로 형성 한 후 non-cyanidic 액을 이용하여 전류밀도 0.02 - 0.06 mA, bubble 및 non-bubble flow를 조건으로 하여 도금된 Au 전극의 특성을 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.240-243
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• 1995

The basic electrochemical and photochemical behavior of ultrathin mono- and hetero-type LB film of amphiphilic Ru bipyridine complex adsorbed on ITO electrode by the Langmuir- Blodgett(LB) method as monolayer and alternating multilayer state. With theoretical equation of cyclic voltammetry for redox species, the cyclic voltammogram were simulated successfully taking account the interaction parameters. We could fit almost all measured voltammograms with k$^{\circ}$=72s$\^$-1/, ${\alpha}$$\sub$a/=0.44, ${\alpha}$$\sub$c/=0.54, $\Gamma$$\sub$T/=1.4${\times}$10$\^$-10/, k=0.015s$\^$-1/ values. The AFM images of mono and hetero type LB film surfaces on ITO were also studied.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.101-107
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• 1994

The PMMA/Ge/AZ trilayer resist decreased proximity effect of backscattering electrons and corrected pattern distoration in order to from deep submicron patterns. In the experiment, the prosiemity effect is decreased by 11% and 30% for the case of 0.9$\mu$m and 1.7$\mu$m AZ, respectively, in trilayer resist compared to monolyer resist. also, the EID of 240$\AA$ Ge film is smaller than that of 500$\AA$ film by 365. 0.1$\mu$m line/space was formed in the 2000$\AA$ PMMA layer with the condition of dose 330${\mu}C/cm^{2}$ and of 150sec of develop time in MIBK : IPA (1:3) developer.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.59-66
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• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.230-234
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• 2011

In this work, the primary material for a single layered hardmask which can afford a spin-on process was prepared by the minture of organic and inorganic sources. The preparation of hybrid polymer was attempted by esterification from silanol terminated siloxane compounds and acetonide-2,2-bis(methoxy)propionic acid. The optical, thermal and morphological properties of the test hardmask film was examined in terms of cross-linking agent and additives. In addition, the etch rate of hardmask film and photo resist layer were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful for hardmask film to form the nano-patterns.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.101-106
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• 1992

pH-ISFETs, the semiconductor pH sensors, were combined with immobilized enzyme membranes to prepare FET type urea and glucose sensors and its operational characteristics were investigated. Photolithography techniques were applied to immobilize enzymes on the $H^{+}$ sensing membrane of the pH-ISFET with photo-sensitive polymers, PVA-SbQ. Fabricated urea and glucose sensors could determine $0.5{\sim}50{\;}mg/dl$ urea concentrations and $10{\sim}1000{\;}mg/dl$ glucose concentrations, respectively.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.496-503
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• 1992

An ISFET urea sensor was fabricated by immobilizing the urease using photosensitive polymer, poly(vinyl alcohol)-SbQ on the H$^+$ sensing $Si_3$$N_4$ thin film of pH-ISFET. The sensor could determine the urea concentration in the range of 1∼50 mg/dl with fast response and good repeatability. For its application to clinical analysis, the interferences of the various materials which cause inhibition in urease catalytic reactions in blood was investigated. The results of the urea measurements in blood plasma using the ISFET urea sensor were compared with these of conventional spectrophotometric method.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.