• 제목/요약/키워드: , depth profile

검색결과 892건 처리시간 0.027초

아스팔트 포장의 노면조직 특성 분석 (Analysis of Texture Characteristics of Asphalt Pavements)

  • 홍성재;이승우
    • 한국도로학회논문집
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    • 제19권2호
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    • pp.1-6
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    • 2017
  • PURPOSES : Pavement textures can be categorized into four according to wavelength: microtexture, macrotexture, megatexture (roads), and roughness. Pavement surface texture influences a number of aspects of tire-pavement interaction such as wet-weather friction, tire-pavement noise, splash, spray, tire-wear, and rolling resistance. In particular, macrotexture is the pavement surface characteristic that considerably impacts tire-pavement noise. In general, it can be demonstrated that tire-pavement noise increases with the increase of texture depth and wavelength. Recently, mean profile depth (MPD) and wavelength have been used to evaluate tire-pavement noise. This study aimed to identify the relationship between mean profile depth and average wavelength for asphalt pavement based on the information obtained on a number of asphalt pavement sections. METHODS : Profile data were collected from a number of expressway sections in Korea. In addition, mean profile depth and average wavelength were calculated by using this profile data. Statistical analysis was performed to determine the correlationship between mean profile depth and average wavelength. RESULTS:This study demonstrates a linear relationship between mean profile depth and average wavelength for asphalt concrete pavement. CONCLUSIONS :The strong relationship between mean profile depth and average wavelength of asphalt pavement was determined in this study.

Oxygen flooding에 의해 왜곡된 SIMS depth profile의 보정 (Correction of Secondary ion Mass Spectrometry depth profile distorted by oxygen flooding)

  • 이영진;정칠성;윤명노;이순영
    • 한국진공학회지
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    • 제10권2호
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    • pp.225-233
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    • 2001
  • Oxygen flooding을 이용한 Secondary ion Mass Spectrometry(SIMS) 분석에 있어서 표면에 산화막이 있을 때 발생하는 SIMS depth profile의 왜곡현상에 대한 원인을 분석하고 이를 보정하였다. 이러한 왜곡현상은 표면 산화막에서와 Si 매질에서의 sputter rate이 다른 데서 발생하는 깊이 보정 오류와 상대감도인자(relative sensitivity factor, RSF)가 다른 데서 발생하는 농도보정 오류로부터 발생됨이 밝혀졌다. 깊이보정 오류를 바로잡기 위하여 $N^a+$ 이온을 산화막과 Si 매질의 계면에 대한 marker로 사용하였으며 산화막 두께는 SEM 및 XPS로 측정하였다. 산화막과 Si 매질에서의 sputter rate 및 RSF의 차이는 주로 oxygen flooding이 유발한 산화막 형성시의 부피팽창에 의한 것으로 해석되었으며 이를 보정한 depth profile은 oxygen flooding없이 분석한 경우와 거의 동일한 결과를 보여주었다.

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고주파대역에서 피크값, Time Average 및 Depth Profile 초음파 영상처리 (The Ultrasonic Image Processing by Peak Value, Time Average and Depth Profile Technique in High Frequency Bandwidth)

  • 이종호
    • 전자공학회논문지T
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    • 제35T권3호
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    • pp.120-127
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    • 1998
  • 본 논문에서는 25㎒대역에서 피크값 검출, time average 및 depth profile 알고리즘을 초음파 현미경에 적용하였고 각 알고리즘의 성능을 비교, 분석하였다. time average 알고리즘에서는 동전 한 지점에서 반사된 펄스파가 시간영역에서 디지털 값으로 변환되고 변환된 512개 데이터의 평균값이 계산된다. time average영상은 샘플의 스캐닝영역에서 획득된 N×N 매트릭스 평균값들이 그레이레벨에 의해 획득된다. 시간영역에서 smoothing효과를 갖는 이 기술은 산란현상을 많이 일으키는 영역의 초음파영상을 향상시킬 수 있다. depth profile 기술에서는 기준신호와 검출신호의 시간차가 최소 2ns의 분해능을 갖고 검출되므로 스캐닝 영역의 3차원적인 실제 형태가 상대적인 크기로 검출된다. 이러한 실험을 통하여 피크값 검출, time average 및 depth profile 알고리즘이 분석되었고 각 알고리즘의 잇점이 제시되었다.

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Si(100)에 이온 주입 시 dose rate에 따른 damage profile과 sheet resistance의 변화

  • 김형인;정영완;강석태
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.188-188
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    • 2010
  • 동일한 에너지와 일정한 dose량을 유지하고 dose rate만을 변화시켜가며 이온을 Si(100) 표면에 주입하였다. 이러한 조건하에서 이온의 dose rate가 커지게 되면 시료 내에서 relaxation되는 시간이 짧아져서 damage의 양이 증가하게 되고 depth profile의 꼬리부분이 표면 쪽으로 올라오게 된다. 이와 같은 damage profile의 변화가 sheet resistance에 영향을 준다는 실험결과가 있다. 본 연구에서는 Crystal-TRIM computer simulation을 통해서 depth profile과 damage profile의 결과를 얻고, dose rate가 커질수록 시료표면 근방에 잔류 damage의 양이 높게 나타나는 것을 확인할 수 있다. 또한, 잔류 damage의 표면근방에서의 분포가 annealing 이후 sheet resistance를 변화시키는데 이에 대한 mechanism을 규명하고자 한다.

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SIMS depth profile을 이용한 중성빔 특성 분석 및 flux 향상방안 (Study of neutral beam characteristics using SIMS depth profile and improvement of neutral beam flux)

  • 김성우;박병재;민경석;강세구;염근영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.61-62
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    • 2007
  • low angle forward reflected neutral beam etching system으로 식각한 후 SIMS depth profile을 이용하여 에너지 침투 깊이에 따른 중성빔 에너지를 분석하여 중성화 과정에서 에너지와 flux의 손실이 있었다. 기존의 two-grid 대신에 three-grid를 사용하여 에너지의 변화없이 이온 flux 및 중성빔 flux가 향상됨을 알 수 있었다.

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몬테카를로 시뮬레이션을 이용한 하안단구 10Be 수직단면 연대측정 (Cosmogenic 10Be Depth Profile Dating of Strath Terrace Abandonment using Monte Carlo Simulation)

  • 김동은;성영배;김종근
    • 한국지형학회지
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    • 제26권4호
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    • pp.21-31
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    • 2019
  • Timing of terrace formation is a key information for understanding the evolution of fluvial systems. In particular, dating strath terrace (i.e. timing of terrace abandonment) is more difficult than depositional terrace that is conventionally constrained by radiocarbon, OSL and other dating methods targeting samples within terrace deposit. Surface exposure dating utilizing cosmogenic 10Be provides more reliability because it can be applied directly to the surface of a fluvial terrace. Thus, this method has been increasingly used for alluvial deposits. As well as other geomorphic surfaces over the last decades. Some inherent conditions, however, such as post-depositional 10Be concentration (i.e. inheritance), surface erosion rate, and density change challenge the application of cosmogenic 10Be to depositional terrace surface against simple bedrock surface. Here we present the first application of 10Be depth profile dating to a thin-gravel covered strath terrace in Korea. Monte Carlo simulation (MCS) helped us in better constraining the timing of abandonment of the strath terrace, since which its surface stochastically denuded with time, causing unexpected change of 10Be production with depth. The age of the strath terrace estimated by MCS was 109 ka, ~4% older than the one (104 ka) calculated by simple depth profile dating, which yielded the best-fit surface erosion rate of 2.1 mm/ka. Our study demonstrates that the application of 10Be depth profile dating of strath terrace using MCS is more robust and reliable because it considers post-depositional change of initial conditions such as erosion rate.

질석화가 진행된 풍화단면에서의 광물조성과 주원소의 변화 (Mineralogical and Chemical Variation in Weathering Profile on Ultramafic Rocks During Vermiculitization)

  • 문희수;송윤구;신상은
    • 자원환경지질
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    • 제26권1호
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    • pp.29-40
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    • 1993
  • Several vermiculite deposits occur as the alteration product from phlogopite in ultramafic rock, in the Hongseong and Cheongyang area, South Korea. Some quarries show well-defined weathering profile. Samples collected from those quarries were examined by XRD and chemistry to define a vertical variations in mineralogy and chemistry of the weathering profile developed on ultramafic rocks. The analysis by X-ray diffractometry showed that mineral compositions changed continuously as depth of profile increasing, the vermiculite-the phlogopite/vermiculite interstratified-the phlogopite. Chemical analysis of bulk samples in altered zone revealed that regardless of composition and kinds of mineral in the rock, there are significant increase of MgO, CaO and $H_2O$, and decrease of K as depth of profile decrease reflecting the characteristics in vermiculitization. Also, there was a tendency that weathering indicies of each sample horizon change gradually with increasing depth. This tendency can be explained as variations of degree of vermiculitization. The regular changes of mineralogical and chemical composition in vertical profile suggest that weathering is the most important process in vermiculitization in this area.

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PC1D 시뮬레이션을 이용한 결정질 실리콘 태양전지의 도핑 프로파일 모델링 (The Doping Profile Modeling of Crystalline Silicon Solar Cell with PC1D simulation)

  • 최성진;유권종;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.149-153
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    • 2011
  • The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

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원형관에서 상대수심을 고려한 점변류 해석 (Analysis of Gradually Varied Flow Considering Relative Depth in Circular Pipe)

  • 김민환;박정희;송창수
    • 상하수도학회지
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    • 제21권3호
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    • pp.287-294
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    • 2007
  • When we use the circular pipes for wastewater and storm water, we should be known the characteristics of the flow for accurate design. To elevate the design accuracy, we want to know the profile of flow. The roughness coefficient in the Manning equation is constant, but in actuality changed with the relative depth in circular pipe. This study was conducted to calculate the relative normal depth in changing the roughness coefficient (named relative roughness coefficient) with the relative depth in the analysis of gradually varied flow in the circular pipe by Newton-Raphson method. We performed the analysis of gradually varied flow using the relative normal depth and the relative roughness coefficient. We presented the 12 flow profiles with the relative depth and the relative roughness coefficient in circular pipe. The flow classification considering relative depth in circular pipe is available to analyse gradually varied flow profiles.

레이저용접부 온도측정을 위한 적외선 온도측정장치의 개발에 관한 연구(I) -용융부 형상에 따른 표면온도분포- (A Study of the Infrared Temperature Sensing System for Surface Temperature Measurement in Laser Welding(I) - Surface Temperature Profile According to Bead Shape -)

  • 이목영;김재웅
    • Journal of Welding and Joining
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    • 제20권1호
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    • pp.62-68
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    • 2002
  • This study investigated the feasibility of penetration depth measurement using infrared temperature sensing on the weld surface. The detection point was optimized by FEM analysis in the laser keyhole welding. The profile of the weld surface temperature was measured using infrared detector array. Surface temperature behind the weld pool is proportional or exponentially proportional to penetration depth and bead width. From the results, the monitoring device of surface temperature using infrared detector array was applicable fur real time penetration depth control.