• Korean Journal of Crystallography
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• v.8 no.1
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• pp.6-14
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• 1997

The crystal structures of $Sr_{31}K_{30}-X\;(Sr_{31}K_{30}Si_{100}A1_{92}O_{384};\;a=25.169(5) {\AA}$) and $Sr_{8.5}Tl_{75}-X (Sr_{8.5}Tl_{75}Si_{100}A1_{92}O_{384};\;a=25.041(5) {\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group $\=F{d3}\;at\;21(1)^{\circ}C$. Each crystal was prepared by ion exchange in a flowing stream of aqueous $Sr(ClO_4)_2\;and\;(K\;or\;T1)NO_3$ whose mole ratio was 1 : 5 for five days. Vacuum dehydration was done at $360^{\circ}C$ for 2d. Their structures were refined to the final error indices $R_1=0.072\;and\;R_w=0.057$ with 293 reflections, and $R_1= 0.058\;and\;R_w=0.044$ with 351 reflections, for which $I>2{\sigma}(I)$, respectively. In dehydrated $Sr_{31}K_{30}-X,\;all\;Sr^{2+}$ ions and $K^+$ ions are located at five different crystallographic sites. Six-teen $Sr^{2+}$ ions per unit cell are at the centers of the double six-rings (site I), filling that position. The remaining 15 $Sr^{2+}$ ions and 17 $K^+$ ions fill site II in the supercage. These $Sr^{2+}$ and $K^+$ ions are recessed ca $0.45{\AA}\;and\;1.06{\AA}$ into the supercage, respectively, from the plane of three oxygens to which each is bound. ($Sr-O=2.45(1){\AA}\;and\;K-O=2.64(1){\AA}$) Eight $K^+$ ons occupy site III'($K-O=3.09(7){\AA}\;and\;3.11(10){\AA}$) and the remaining five $K^+$ ions occupy another site III'($K-O=2.88(7){\AA}\;and\;2.76(7){\AA}$). In $Sr_{8.5}Tl_{75}-X,\;Sr^{2+}\;and\;Tl^+$ ions also occupy five different crystallographic sites. About 8.5 $Sr^{2+}$ ions are at site I. Fifteen $Tl^+$ ions are at site I' in the sodalite cavities on threefold axes opposite double six-rings: each is $1.68{\AA}$ from the plane of its three oxygens ($T1-O=2.70(2){\AA}$). Together these fill the double six-rings. Another 32 $Tl^+$ ions fill site II opposite single six-rings in the supercage, each being $1.48{\AA}$ from the plane of three oxygens ($T1-O=2.70(1){\AA}$). About 18 $Tl^+$ ions occupy site III in the supercage ($T1-O=2.86(2){\AA}$), and the remaining 10 are found at site III' in the supercage ($T1-O=2.96(4){\AA}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.43-43
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• 2009

단련용 다결정 Ni기 초내열합금은 우수한 가공성, 내산화성, 고온특성 등으로 가스터빈 연소기, 디스크, 증기발생기 전열관 등 발전용 고온부품 소재에 널리 적용되고 있다. 최근 발전설비의 고효율화를 꾀하기 위해 작동 온도를 현격히 증가시키는 기술방향으로 발전하고 있고, 소재측면에서는 기존의 초내열합금 대비 고기능성을 확보할 수 있는 차세대 Ni기 초내열합금 개발이 유럽, 미국, 일본, 중국 등을 중심으로 활발히 이루어지고 있다. 이러한 소재의 고온강도 (온도수용성)를 향상시키기 위해서는 통상 규칙격자 금속간화합물인 $Ni_3(Al,Ti)-{\gamma}'$상의 분율을 증가시킬 수 있지만, ${\gamma}'$상분율이 증가할 경우 용접 및 후열처리 동안 용접열영향부 (HAZ)에서 액화균열이 발생할 가능성이 높아진다. 결정립계를 따라 발생하는 HAZ 액화균열은 입계특성에 의해 크게 영향을 받을 것으로 판단된다. 한편, 본 연구자들은 최근 입계 serration 현상을 단련용 합금에 도입시키는 특별한 열처리를 이론적 접근법을 통해 개발하였다. 형성된 파형입계는 결정학적인 관점에서 조밀 {111} 입계면을 갖도록 분해 (dissociation)되어 낮은 계면에너지를 갖게 됨을 확인하였으며, 입계형상 변화뿐만 아니라 탄화물 특성변화까지 유도하여 크리프 수명을 기존대비 약 40% 정도 향상시킴을 확인하였다. 이러한 직선형 입계 대비 'special boundary'로 간주되는 파형입계가 도입될 경우, HAZ 결정립크기 변화 및 액화거동에 미치는 영향을 고찰하고, 아울러 입계특성 제어가 용접성/용접부 품질 향상에 기여할 수 있는 가능성도 토의하고자 하였다. 본 연구에서는 재현 HAZ 열사이클 시험을 통해 미세구조를 정량적으로 비교하였다. 상대적으로 입계구조가 안정된 파형입계의 이동속도가 高계면 에너지를 갖는 직선형 입계보다 느려 HAZ 결정립 성장이 효과적으로 억제됨을 확인할 수 있었다. 입계 액화거동을 살펴보면, 두 시편 모두 $M_{23}C_6$, MC 등 입계탄화물 계면이 빠른 승온중 액화반응 (constitutional liquation)에 의해 입계가 액화되었으며, 이후 급냉에 의해 입계에 액상막이 존재한 흔적이 발견되었다. 최고온도별로 입계액화 폭/비율을 정량적으로 비교한 결과, 파형입계가 직선입계 대비 대체로 낮음을 확인할 수 있었으며, 때때로 액화되지 않고 잔존하는 입계 탄화물이 관찰되었다. 재현 HAZ 미세조직을 통해 Hot ductility 시험 결과를 유추하자면, 파형입계가 직선입계 보다 좁은 취성온도영역 (Brittle Temperature Range)을 나타낼 것으로 예상되어, 입계특성제어에 의해 Ni기 초내열합금의 용접성을 향상 가능성을 확인하였다.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.38 no.4
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• pp.350-359
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• 1993

The effect of gibberellic acid ($GA_3) and abscisic acid (ABA) on KCl-enhanced proteolysis of senescing leaves of rice(Oryza sativa L. cv. Chilsung) was studied. Emphasis was given to their effects on KCI-enhanced efflux of amino acids and proteinase activity. When treated singly, $GA_3 affected leaf proteolysis little, while ABA increased proteolysis, the rate of amino acid efflux, and ribulose -1,5 -bisphosphate carboxylase / oxygenase (Rubisco)-degrading endoproteinase activity. An additive increase in all three parameters mentioned above was observed when leaves were treated with ABA and KCl. No such an additive effect was found when $GA_3 was treated with KCl. Both $GA_3 and ABA helped to alleviate the KCI-suppressed activity of Rubisco-degrading exoproteinases. The additive increase in proteolysis of rice leaves in the presence of both ABA and KCl could thus be ascribed to a further increase in the efflux of protein hydrolyzates and Rubisco-degrading endoproteinase activity. An increase in proteolysis was accompanied by a decrease in water absorption, and the combined treatment of ABA with KCl resulted in a further reduction of water absorption.

• Korean Journal of Poultry Science
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• v.31 no.4
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• pp.245-253
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• 2004

This study was conducted to investigate the effects of dietary yeast culture containing rPST on growth performances and the characteristics of body compositions in broiler chickens. A total of 460 Ross male broiler chicks aged 2-day-old were fed one of five experimental diets; Control(devoid of all), TI (with $0.1\%$ antibiotics; chlorotetracycline), T2 (with $0.1\%$ rPST-yeast culture), T3 (with $0.2\%$ rPST-yeast culture) or T4 (with $0.2\%$ SC yeast culture) for 6 weeks. Feed consumption and body weights were measured weekly. At week 5 of the experiment, 10 chicks were randomly selected and sacrificed. The relative weights of each organ and the chemical composition of edible meat were measured. The enzyme activity, total cholesterol, Ca and P were also determined. Tibial weight, bone strength and chemical composition were investigated. There were no significant differences in feed intake and feed conversion ratios among the treatments throughout the experimental period. Body weight gains tended to be increased by feeding of diets containing rPST-yeast culture. The relative weight of breast muscle in T3 group was significantly higher than that of the control (P<0.05). The moisture contents of breast meat in groups fed diets containing rPST-yeast culture or SC yeast culture were significantly increased as compared with those of the control and n. However, the contents of crude protein and ether extract were not affected by feeding of rPST-yeast culture. There were no significant differences in GOT, total cholesterol, Ca and P. The relative weight and strength and proximal composition of the tibia were also not affected by dietary treatments. These results indicated that dietary rPST-yeast culture may be a valuable alternative for optimizing growth performances, particularly for improving the yield of breast muscle.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.226-231
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• 2008

Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.07a
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• pp.25-37
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• 2002

The most important industrial application of gamma radiation in characterizing green compacts is the determination of the density. Examples are given where this method is applied in manufacturing technical components in powder metallurgy. The requirements imposed by modern quality management systems and operation by the workforce in industrial production are described. The accuracy of measurement achieved with this method is demonstrated and a comparison is given with other test methods to measure the density. The advantages and limitations of gamma ray densitometry are outlined. The gamma ray densitometer measures the attenuation of gamma radiation penetrating the test parts (Fig. 1). As the capability of compacts to absorb this type of radiation depends on their density, the attenuation of gamma radiation can serve as a measure of the density. The volume of the part being tested is defined by the size of the aperture screeniing out the radiation. It is a channel with the cross section of the aperture whose length is the height of the test part. The intensity of the radiation identified by the detector is the quantity used to determine the material density. Gamma ray densitometry can equally be performed on green compacts as well as on sintered components. Neither special preparation of test parts nor skilled personnel is required to perform the measurement; neither liquids nor other harmful substances are involved. When parts are exhibiting local density variations, which is normally the case in powder compaction, sectional densities can be determined in different parts of the sample without cutting it into pieces. The test is non-destructive, i.e. the parts can still be used after the measurement and do not have to be scrapped. The measurement is controlled by a special PC based software. All results are available for further processing by in-house quality documentation and supervision of measurements. Tool setting for multi-level components can be much improved by using this test method. When a densitometer is installed on the press shop floor, it can be operated by the tool setter himself. Then he can return to the press and immediately implement the corrections. Transfer of sample parts to the lab for density testing can be eliminated and results for the correction of tool settings are more readily available. This helps to reduce the time required for tool setting and clearly improves the productivity of powder presses. The range of materials where this method can be successfully applied covers almost the entire periodic system of the elements. It reaches from the light elements such as graphite via light metals (AI, Mg, Li, Ti) and their alloys, ceramics ($AI_20_3$, SiC, Si_3N_4, $Zr0_2$, ...), magnetic materials (hard and soft ferrites, AlNiCo, Nd-Fe-B, ...), metals including iron and alloy steels, Cu, Ni and Co based alloys to refractory and heavy metals (W, Mo, ...) as well as hardmetals. The gamma radiation required for the measurement is generated by radioactive sources which are produced by nuclear technology. These nuclear materials are safely encapsulated in stainless steel capsules so that no radioactive material can escape from the protective shielding container. The gamma ray densitometer is subject to the strict regulations for the use of radioactive materials. The radiation shield is so effective that there is no elevation of the natural radiation level outside the instrument. Personal dosimetry by the operating personnel is not required. Even in case of malfunction, loss of power and incorrect operation, the escape of gamma radiation from the instrument is positively prevented.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.259-260
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• 2011

대기압 플라즈마는 멸균과 살균, 지혈, 피부재생, 치아 미백 등 여러 의학 분야를 대상으로 그 효과를 나타내고 있으며, 플라즈마 장비를 만들어 내기 위해 부피가 큰 진공 장비가 필요하지 않다는 점에서 대기압 플라즈마는 그 활용과 효과에 있어 큰 기대를 받고 있다. 대기압에서 플라즈마는 다양한 주파수를 이용하여 만들어져 왔으며, 본 연구실에서 연구하고 있는 수백 MHz-수 GHz 대역의 파워를 사용하는 플라즈마의 경우 대기압 플라즈마를 의학 분야에 사용할 때 만족해야 할 조건들에 만족하는 특성을 보여준다. 기존의 고주파를 사용하는 장비의 경우 추가적인 Matching 장비로 인해 플라즈마를 만들기 위해 큰 장비와 높은 파워가 필요한 단점이 있었다. 하지만 이 마이크로웨이브 장비는 전송선 이론을 기반으로 장비 자체가 구조적인 Matching이 이루어 지도록 설계되었다(그림 1). 즉, 추가적인 Matching 장비의 필요 없이 외부에서 파워를 주는 것만으로 플라즈마를 발생 시킬 수 있으며, 50% 이상의 파워 효율을 보여준다. 또한 그 크기도 손에 쥐고 사용할 수 있을 볼펜 정도의 크기이며, 3W의 정도의 저 전력으로 플라즈마를 발생 시켰다. 높은 에너지를 가지는 전자들은 공급되는 기체뿐만 아니라, 주변 공기와의 반응하여 여러 응용분야에 적합한 활성 종을 다량 만들어내게 된다. 본 연구실의 강점인 플라즈마 시뮬레이션으로 얻은 결과에서 주파수가 올라 갈수록 높은 에너지를 가지는 전자들이 많아지는 것을 보여준다. 그리고 발생시킨 플라즈마의 광학 특성에서도 생의학 분야에 적합한 많은 활성 종들이 발생 되는 것을 확인하였다. 일반적으로 의학 분야에 사용되는 플라즈마의 경우 플라즈마에서 발생하는 열에 의한 피해를 최소화 하는 것이 중요하다. 마이크로웨이브 플라즈마의 경우, 그 플라즈마의 온도가 50$50^{\circ}$C 미만으로 의학 분야에 사용하기 적합하다. 또한 구동 주파수가 올라갈수록 플라즈마를 유지하는데 필요한 전압이 상대적으로 낮아지게 되는데, 이는 전기적 쇼크 등 플라즈마 의용에서 발생하는 안전성 문제에 있어서도 마이크로 웨이브 장비가 좋은 점이다. 본 플라즈마 장비를 구동하기 위한 손바닥 크기 정도의 소형의 전용 파워 장치를 개발함으로써 저전력 소형 플라즈마 장치를 개발하는 것을 목표로 하고 있다. 마이크로 웨이브 장비는 여러 가지 분야에서 그 효과를 검증 받았다. 혈액 응고 실험에서 30초 정도의 짧은 처리만으로도 자연 응고에 비해 탁월한 지혈 효과를 보여줬다 (그림 2). 충치를 발생시키는 대표적인 구강균인 S.mutans의 살균 실험에서 Ti02와의 복합적인 처리를 통해 30초 미만의 처리로 처리하지 않은 것에 비해 10-6 만큼의 줄어드는 살균 효과를 보여줬다. 뿐만 아니라 치아의 미백에 있어서도 탁월한 효과를 나타냈다. 현재 본연구실에서는 마이크로 웨이브 장비의 기본적인 구조를 응용하여, 좀더 넓은 영역을 처리할 수 있는 대면적 마이크로 웨이브 장비를 위한 연구를 수행 중이다.