• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.128-134
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• 2003

Alloys of Ti-43%Al-2%W-0.1%Si were oxidized isothermally and cyclically between $900^{\circ}C$ and$ 1050^{\circ}C$, and their oxidation characteristics were studied. During isothermal tests, the alloys oxidized slowly up to 100$0^{\circ}C$, but fast at $1050^{\circ}C$. Though the scale adherence was not good above $900^{\circ}C$, the alloys displayed better oxidation behavior than unalloyed TiAl alloys. The oxide scales consisted primarily of an outer $TiO_2$ layer, intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of (TiO$_2$ $+Al_2$$O_3$). Tungsten was present mainly at the lower part of the oxide scale, while Si over the whole oxide scale.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.394-398
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• 2004

A Ti47Al1.7W-3.7Zr alloy was oxidized between $900^{\circ}C$ and $1050^{\circ}C$, and the oxide scales formed were studied. The oxide scales consisted primarily of an outer$TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed ($TiO _2$ + $Al_2$$O_3$) layer. Besides $TiO_2$ and $Al_2$$O_3$, oxidation led to the formation of some $Ti_2$AlN and TiN. Both W and Zr were preferentially segregated below the intermediate $Al_2$$O_3$-rich layer. Tungsten in the oxide scale was present as $WO_3$ and ${Ti}_{x}$$W_{1-x}$, whereas zirconium as monoclic-$ZrO_2$ and tetragonal-$ZrO_2$.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Nuclear Engineering and Technology
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• v.4 no.2
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• pp.132-136
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• 1972

The mechanism for activated sintering of UO$_2$by an addition of 0.05 w/o TiO$_2$was investigated using a high temperature X-ray diffractometer. The diffraction pattern of UO$_2$pellets was studied in a temperature range from room temperature to 120$0^{\circ}C$ in hydrogen atmosphere. At 120$0^{\circ}C$, the expansion of UO$_2$lattice were 1.448% and 1.354% greater when it was compared with those at room temperature for pellets with and without the 0.05 w/o TiO$_2$addition, respectively-The effect of the TiO$_2$addition is to increase the lattice constant of UO$_2$by 0.094% at 120$0^{\circ}C$. The lattice constant at 120$0^{\circ}C$without the TiO$_2$addition is equal to that at 108$0^{\circ}C$ with the 0.05 w/o TiO$_2$addition. This temperature difference could be well compared with the suppression of sintering temperature by TiO$_2$hat had been observed Previously. It is believed that the increase in lattice expansion due to the TiO$_2$addition would give rise to the activated sintering of UO$_2$by the lattice-expansion-induced-enhancement of self diffusion.

• Journal of radiological science and technology
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• v.26 no.3
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• pp.19-24
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• 2003

We carried out studies on development and characteristic of ultrasound brast training biopsy phantom. the major finding were of follow ; (1) C type TMM was shown good homogeneity, brightness and attenuation as like human soft tissue. (2) $TiO_2$ 4.10%w/v TMM was shown good homogeneous echo texture and propagated speed as like the human Tissue. (3) $TiO_2$ type TMM was appeared lower brightness and higher penetration rate than C type TMM. Therefor, Breast TM phantom and target material TMM will be useful $TiO_2$ 4.10 %w/v TMM and C 2.09 %w/v TMM.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.79-82
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• 1995

$N^+$ beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~$3\times 10^{17}$atoms/$\textrm{cm}^2$. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range $600^{\circ}C$~$800^{\circ}C$ for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.

• Journal of Powder Materials
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• v.22 no.3
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• pp.208-215
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• 2015

Fe-TiC composite powders were fabricated by planetary ball mill processing. Two kinds of powder mixtures were prepared from the starting materials of (a) (Fe, TiC) powders and (b) (Fe, $TiH_2$, Carbon) powders, respectively. Milling speed (300, 500 and 700 rpm) and time (1, 2, and 3 h) were varied. For (Fe, $TiH_2$, Carbon) powders, an in situ reaction synthesis of TiC after the planetary ball mill processing was added to obtain a homogeneous distribution of ultrafine TiC particulates in Fe matrix. Powder characteristics such as particle size, size distribution, shape, and mixing homogeneity were investigated.